反應(yīng)燒結(jié)工藝對碳化硅陶瓷微結(jié)構(gòu)及性能的影響
發(fā)布時間:2018-07-03 04:37
本文選題:反應(yīng)燒結(jié) + 碳化硅陶瓷; 參考:《硅酸鹽通報》2017年02期
【摘要】:研究了脫膠溫度、加硅量、升溫速率及重燒次數(shù)對反應(yīng)燒結(jié)碳化硅陶瓷金相組織、體積密度、力學性能和微觀結(jié)構(gòu)的影響。結(jié)果表明:經(jīng)800℃脫膠,硅與碳化硅生坯的質(zhì)量比為0.9∶1,升溫速率為1.0℃/min時,反應(yīng)燒結(jié)碳化硅陶瓷產(chǎn)品的性能最好,體積密度為3.09 g/cm~3,維氏硬度為26.82 GPa,彎曲強度為388 MPa,斷裂韌性為4.49MPa·m~(1/2)。對滲硅不充分的不合格品進行重燒可以有效提高產(chǎn)品的致密度和力學性能,但是,重燒次數(shù)過多會引起晶粒粗化,從而導致力學性能下降。
[Abstract]:The effects of degumming temperature, amount of silicon added, heating rate and times of refiring on the microstructure, bulk density, mechanical properties and microstructure of reactive sintering silicon carbide ceramics were studied. The results show that when the mass ratio of silicon to silicon carbide is 0.9: 1, and the heating rate is 1.0 鈩,
本文編號:2092420
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