本文選題：硫系玻璃 + 亞帶隙光輔助電場極化法��； 參考：《武漢理工大學(xué)》2015年碩士論文

【摘要】：近些年來,采用不同極化方法在玻璃材料中誘導(dǎo)二次諧波發(fā)生(SHG)性能引起了人們的很大興趣,并提出了多種理論解釋這一現(xiàn)象,但各國研究者對SHG性能產(chǎn)生的微觀機制尚未達成共識。本課題基于硫系玻璃材料中光致各向異性在亞帶隙光輻照下有最大的光敏特性且能產(chǎn)生光致流動性,采用亞帶隙光輔助電場極化法,研究了激光功率、極化電壓、材料組分變化以及極化方式對SHG性能的影響規(guī)律,采用Raman光譜、透過光譜、原子力顯微鏡AFM、掃描電鏡SEM以及EDS能譜圖等現(xiàn)代材料測試方法,探索了玻璃極化區(qū)域的熱力學(xué)過程的演變規(guī)律,確定了最佳極化條件,揭示了硫系玻璃SHG性能及其弛豫行為的相關(guān)機理。該研究對于分析硫系玻璃材料中SHG性能產(chǎn)生的根源以及探討氧化物玻璃材料中建立的物理模型是否同樣適用于硫系玻璃,并且豐富硫系玻璃的SHG性能理論,具有十分重要的科學(xué)研究和實際應(yīng)用價值,為光電子材料器件諸如光學(xué)倍頻器,全光開關(guān)的開發(fā)與設(shè)計提供了理論支撐。本文分別選用GeS4、GeS5塊體玻璃作為研究對象,主要研究結(jié)果如下:1、采用熔融-淬冷技術(shù)制備了Ge-S組分的塊體玻璃材料,GeS4、GeS5玻璃成玻性能良好;GeS4、GeS5玻璃在基頻光1064nm處的透過率分別為78.31%,74.73%,在倍頻光532nm處的透過率分別為59.53%,52.80%,滿足了實驗要求;Raman光譜表明GeS5玻璃中的S8環(huán)結(jié)構(gòu)基元各對應(yīng)峰的強度都要比相應(yīng)GeS4玻璃的強,為解釋材料的組分變化對其SHG性能影響提供了實驗依據(jù)。2、設(shè)計并搭建了亞帶隙光輔助電場極化裝置,實現(xiàn)了室溫下空氣介質(zhì)中簡易清潔高效對硫系玻璃材料的極化處理,滿足了光電材料的應(yīng)用要求。3、采用亞帶隙光輔助電場極化法,在Ge-S玻璃中獲得了SHG性能;極化條件的研究表明:相對SH信號強度隨激光功率的增大,先逐漸增強,180mW時得到極大值,隨后出現(xiàn)減小的趨勢,因此激光功率對相對SH信號強度的影響具有雙重作用,與其熱效應(yīng)有關(guān);相對SH信號強度隨極化電壓的增大,先逐漸增強,3.5kV之后趨于飽和;得到了最佳極化條件(激光功率180mW,極化電壓3.5kV,極化時間1h,保壓時間1h);極化后樣品的SH信號存在弛豫現(xiàn)象,放置兩周后,SH信號就較弱了,與玻璃基體中的結(jié)構(gòu)基元從高能激發(fā)態(tài)自發(fā)輻射釋放能量的過程有關(guān);采用線極化的極化方式,在玻璃中寫入了倍頻波導(dǎo)。4、對玻璃極化區(qū)域的熱力學(xué)過程演變規(guī)律進行研究,結(jié)果表明:Ge-S玻璃極化前后Raman光譜中各結(jié)構(gòu)基元的主峰峰位基本沒有改變,只是峰的強度有所增強,歸因于材料中結(jié)構(gòu)基元吸收了能量,其熱振動變得更加劇烈;透過光譜結(jié)果表明材料極化后整體的透過性能有所下降,且向長波段偏移即發(fā)生了紅移,這與光致暗化現(xiàn)象比較類似,歸因于玻璃基體吸收了能量;AFM以及SEM形貌圖結(jié)果表明極化后區(qū)域的平均粗糙度比相應(yīng)極化前的有所增加,這與亞帶隙光輻照后引起的光致流動性體效應(yīng)有關(guān);EDS能譜圖結(jié)果表明極化后與極化前相比Ge元素的含量基本不變,S元素的含量有所減少,O元素的含量有所增加,歸因于所用的外場比較強,且在空氣中做極化,極化區(qū)域發(fā)生了部分氧化。5、SHG性能的產(chǎn)生緣于亞帶隙光輔助電場極化破壞了玻璃的各向同性,產(chǎn)生了倍頻信號;采用偶極子取向模型解釋機理;利用經(jīng)典Tauc方程計算樣品的允許直接躍遷光學(xué)^/隙(Eoptd)、允許間接躍遷光學(xué)^/隙(Eopti)以及Urbach能量(?E)。結(jié)果表明GeS5玻璃的光學(xué)^/隙值比GeS4玻璃的小,它的電子躍遷容易,因而其非線性效應(yīng)增強;另外GeS5玻璃的Urbach能量值比GeS4玻璃的大,它的帶破裂與缺陷形成的趨勢就越大,由此也能說明GeS5玻璃比GeS4玻璃更易于被極化,極化后表現(xiàn)出更強的倍頻功能。
[Abstract]:In recent years, the use of different polarization methods to induce the two harmonic generation (SHG) in glass materials has aroused great interest, and a variety of theoretical explanations have been put forward, but the researchers of various countries have not reached consensus on the micro mechanism of the performance of SHG. The gap light has the greatest photosensitivity and can produce photoinduced fluidity. Using the sub band gap light assisted electric field polarization method, the influence of laser power, polarization voltage, material component change and polarization mode on SHG performance is studied. Raman spectrum, transmission spectrum, primary subforce microscope AFM, scanning electron microscope SEM and EDS energy spectrum are used. On behalf of material testing method, the evolution law of thermodynamic process of glass polarization region was explored, the optimum polarization condition was determined, and the related mechanism of SHG properties and relaxation behavior of sulphur system glass was revealed. The research on the origin of SHG properties in sulphur glass materials and the physical model established in oxide glass materials were discussed. Whether it is suitable for sulphur based glass and enriching the SHG property theory of sulfur based glass has very important scientific research and practical application value. It provides theoretical support for the development and design of optoelectronic material devices such as optical frequency doubler and all optical switch. This paper selected GeS4 and GeS5 bulk glass as the research object. The results are as follows: 1, the bulk glass materials of Ge-S components are prepared by the melt quenching technology, and the properties of GeS4 and GeS5 glass are good, and the transmittance of GeS4, GeS5 glass at the basic frequency 1064nm is respectively 74.73%, and the transmittance of the 532nm at the frequency doubling light is 59.53% and 52.80%, respectively. The Raman spectrum shows the GeS5 glass in the GeS5 glass. The strength of each corresponding peak of the S8 ring structure is stronger than that of the corresponding GeS4 glass. It provides an experimental basis for explaining the influence of the composition of the material on its SHG performance. The sub band gap optical auxiliary electric field polarization device is designed and built, which realizes the simple cleaning and high efficiency of the polarization treatment of the sulphur glass material in the air medium at room temperature. The application of optoelectronic materials requires.3, using the sub band gap light assisted electric field polarization method to obtain the SHG performance in the Ge-S glass. The polarization condition study shows that the relative SH signal strength increases gradually with the increase of laser power, and the maximum value is obtained at 180mW, then the trend is reduced. Therefore, the effect of laser power on the relative SH signal intensity is presented. The relative SH signal strength increases with the increase of the polarization voltage and then becomes saturated with the increase of the polarization voltage. The optimum polarization conditions are obtained (laser power 180mW, polarization voltage 3.5kV, polarization time 1H, holding time 1H), and the relaxation phenomenon of SH signal after polarization, and SH signal is weaker after two weeks of polarization. The structural elements in the glass matrix are related to the spontaneous emission of energy from the spontaneous emission of high energy excited states. The linear polarization polarization mode is used to write the frequency doubling waveguide.4 in the glass. The thermodynamic process evolution of the polarized glass region is studied. The results show that the main peak peak of each structural element in the Raman spectrum of the Ge-S glass before and after the polarization of glass is the peak peak. The strength of the peak is not changed, but the strength of the peak is enhanced, which is attributed to the absorption of energy in the structural elements in the material, and its thermal vibration becomes more intense. The transmission properties of the whole material after the polarization of the material decrease, and the red shift occurs to the long band, which is similar to the photoluminescent phenomenon, which is attributed to the glass base. The body absorbs energy; the results of AFM and SEM morphologies show that the average roughness of the polarized region is higher than that before the polarization, which is related to the photoinduced fluidity effect after the subband Gap light irradiation. The EDS energy spectrum shows that the content of the Ge element is basically the same as before polarization, and the content of the S element is reduced, O The content of the element is increased, which is attributed to the strong external field and polarization in the air and the partial oxidation of.5 in the polarized region. The performance of the SHG is caused by the subband Gap light assisted electric field polarization destroying the isotropy of the glass, producing the frequency doubling signal, using the dipole orientation model to explain the mechanism, and using the classical Tauc equation to calculate the mechanism. The sample allows the direct transition of optical / optical / gap (Eoptd) to allow the indirect transition optical / / / Eopti and Urbach energy (? E). The results show that the optical / optical / gap value of the GeS5 glass is smaller than that of the GeS4 glass, and its electronic transition is easy and its nonlinear effect is enhanced; and the Urbach energy value of the GeS5 glass is larger than that of the GeS4 glass, and its band rupture and defects are broken. The greater the trend is, the GeS5 glass is easier to polarize than GeS4 glass, and shows stronger frequency doubling after polarization.
【學(xué)位授予單位】：武漢理工大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TQ171.1

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