本文選題：CVD石墨烯 + 三嗪�。� 參考：《無機材料學報》2017年05期

【摘要】：以化學氣相沉積(CVD)制備的單層石墨烯為原料,小分子三嗪為摻雜劑,采用吸附摻雜的方式,在低溫下對石墨烯實現(xiàn)n型摻雜。利用拉曼光譜(Raman)、X射線光電子能譜分析(XPS)、原子力顯微鏡(AFM)、紫外分光光度計(UV)和霍爾效應測試儀(Hall)對樣品的形貌、結(jié)構(gòu)及電學性能進行表征。結(jié)果表明:該方法簡單安全,能夠?qū)κ⿲崿F(xiàn)均勻的n型摻雜,摻雜石墨烯的透光率達到95%。摻雜后石墨烯的特征峰G峰和2D峰向高波數(shù)移動。摻雜180 min后,載流子濃度達到4×10~(12)/cm~2,接近摻雜前的載流子濃度,摻雜后的石墨烯在450℃的退火溫度下具有可逆能力,其表面電阻在300℃以下具有較好的穩(wěn)定性。
[Abstract]:Graphene monolayer prepared by chemical vapor deposition (CVD) was used as raw material and triazine as dopant, and n-type graphene was doped at low temperature by adsorption doping. The morphology, structure and electrical properties of the samples were characterized by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM), UV spectrophotometer (UV) and Hall effect tester (Hall). The results show that the method is simple and safe, and can achieve uniform n-type doping of graphene, and the transmittance of doped graphene reaches 95%. The G and 2D peaks of graphene were shifted to high wave number after doping. After doping for 180 min, the carrier concentration reached 4 脳 10 ~ (-1) / cm ~ (-2), which is close to the carrier concentration before doping. The doped graphene has reversible ability at 450 鈩，

本文編號：1973311