發(fā)布時(shí)間：2018-04-27 11:01

  本文選題：氮化鎵 + 納米線�。� 參考：《新疆大學(xué)》2015年碩士論文

【摘要】：納米化、摻雜等技術(shù)手段,可將GaN材料由原本的抗磁性轉(zhuǎn)變?yōu)殍F磁性。GaN基稀磁半導(dǎo)體因其兼具優(yōu)良的光學(xué)、磁學(xué)、電學(xué)性質(zhì),可以用其構(gòu)建磁光電于一體的半導(dǎo)體器件。本論文用化學(xué)氣相沉積法制備了不同濃度Sm摻雜GaN納米線,X射線衍射譜圖表明樣品中是純六方GaN纖鋅礦結(jié)構(gòu);掃描電子顯微鏡圖顯示GaN納米線具有較大的長徑比(400:1),高分辨透射電子顯微鏡及選區(qū)電子衍射圖表明納米線均為單晶;納米線徑向元素線掃描及元素分布圖顯示Sm較均勻地分布在GaN納米線中;樣品具有室溫鐵磁性,其可能源于元素Sm摻雜誘導(dǎo)GaN產(chǎn)生鐵磁有序引起的。直接氮化法制備不同濃度Sm摻雜GaN粉體。X射線衍射譜圖表明樣品是六方GaN纖鋅礦結(jié)構(gòu);摻雜能夠使顆粒平均尺寸降低至100 nm以內(nèi);摻雜引起樣品的光致發(fā)光光譜在近帶邊峰位處藍(lán)移8 nm;摻雜有元素Sm的樣品介電常數(shù)和介電損耗的恒定溫度范圍較純GaN樣品的大,且隨溫度升高,介電常數(shù)和介電損耗的增長速率變小。化學(xué)氣相沉積法生長GaN納米線時(shí)加入MoCl5可以有效地調(diào)控納米線的微觀形貌,同時(shí)也不會(huì)引起雜相產(chǎn)生。隨著MoCl5物質(zhì)的量濃度逐漸增多,GaN納米線的徑向尺寸減少、軸向尺寸增大,當(dāng)其物質(zhì)的量濃度達(dá)到10%時(shí),生長的GaN納米線質(zhì)量最好,平均直徑為50 nm,長度達(dá)到百微米以上,當(dāng)物質(zhì)的量濃度增至15%時(shí),樣品中出現(xiàn)了Z字型、螺旋型納米結(jié)構(gòu);MoCl5物質(zhì)的量濃度再增大則會(huì)使樣品的微觀形貌變化,呈二維甚至三維無規(guī)則生長。
[Abstract]:Nanocrystalline and doped GaN materials can be changed from diamagnetic to ferromagnetic. Gan based diluted magnetic semiconductors have excellent optical, magnetic and electrical properties, so they can be used to construct magneto-optoelectronic semiconductor devices. In this paper, GaN nanowires with different concentrations of Sm were prepared by chemical vapor deposition method. The X-ray diffraction spectra showed that the sample was pure hexagonal GaN wurtzite structure. Scanning electron microscopy (SEM) shows that GaN nanowires have a large aspect ratio of 400: 1g, and high resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SEM) show that the nanowires are single crystal. The radial element line scanning and element distribution of nanowires show that Sm is uniformly distributed in GaN nanowires, and the samples have room temperature ferromagnetism, which may be due to the ferromagnetic ordering of GaN induced by element Sm doping. GaN powder with different concentration of Sm doped by direct nitridation. X-ray diffraction spectra show that the sample is hexagonal GaN wurtzite structure and the average particle size can be reduced to less than 100nm by doping. The photoluminescence spectra of samples induced by doping have a blue shift of 8 nm at the near band side peak, and the constant temperature range of dielectric constant and dielectric loss of samples doped with element Sm is larger than that of pure GaN samples, and increases with the increase of temperature. The growth rate of dielectric constant and dielectric loss becomes smaller. The addition of MoCl5 to the growth of GaN nanowires by chemical vapor deposition can effectively control the micromorphology of nanowires, and at the same time, it will not cause the formation of heterogeneity. With the increase of the concentration of MoCl5, the radial size of gan nanowires decreases and the axial dimension increases. When the mass concentration of GaN nanowires reaches 10 nm, the GaN nanowires are the best, with an average diameter of 50 nm and a length of more than 100 渭 m. When the mass concentration increases to 15, the Z shape appears in the sample, and the increase of the concentration of the helical nano-structure MoCl5 will result in the change of the microstructure of the sample and the growth of the sample is irregular in two or even three dimensions.
【學(xué)位授予單位】：新疆大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TQ133.51;TB383.1

【參考文獻(xiàn)】

相關(guān)期刊論文 前1條

1 K.Oganisian;P.Gluchowski;W.Strek;;Magnetic studies of GaN nanoceramics doped with 1% of cerium[J];Journal of Rare Earths;2011年12期

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本文編號(hào)：1810463