本文選題：ZnO線性陶瓷電阻 + NiO��； 參考：《陜西科技大學(xué)》2015年碩士論文

【摘要】：Zn O線性陶瓷電阻是在上世紀(jì)八十年代末在Zn O壓敏電阻的基礎(chǔ)上發(fā)展起來(lái)的一種新型的線性電阻材料。與傳統(tǒng)的金屬電阻以及含氧化物的碳系電阻相比,具有不易被氧化,使用溫度較高,且體積小、重量輕等優(yōu)點(diǎn),滿足了現(xiàn)代電力系統(tǒng)發(fā)展中對(duì)設(shè)備的小型化以及輕量化的要求。同時(shí),它的電阻率的波動(dòng)范圍較小,具有較小的電阻溫度系數(shù)以及能夠吸收大量的能量密度等優(yōu)點(diǎn)使得其在電路中并聯(lián)使用時(shí)不易發(fā)生電流的擊穿。但是就目前國(guó)內(nèi)生產(chǎn)的Zn O線性陶瓷電阻的來(lái)說(shuō),其電阻率的重復(fù)性以及可靠性還不能滿足產(chǎn)業(yè)化需求,因此還需要我們進(jìn)一步加深Zn O線性陶瓷電阻基礎(chǔ)理論以及性能穩(wěn)定性的分析,從而改善其綜合性能。本文主要以前人研究為基礎(chǔ),選取綜合性能較好的Zn O-Al2O3-Mg O體系作為基礎(chǔ)體系,添加Ni O,制備出新的四元體系,并對(duì)燒結(jié)工藝進(jìn)行了改善,并詳細(xì)探討了不同稀土氧化物對(duì)Zn O線性陶瓷電阻的微觀結(jié)構(gòu)以及電學(xué)性能的影響,并嘗試在綜合性能較好的Zn O-Al2O3-Mg O基礎(chǔ)體系中添加Fe2O3,研究Fe2O3對(duì)Zn O線性陶瓷電阻微觀結(jié)構(gòu)以及各個(gè)電學(xué)性能的影響,為產(chǎn)業(yè)化生產(chǎn)奠定基礎(chǔ)。首先本文向綜合性能較好的Zn O-Al2O3-Mg O基礎(chǔ)體系中,加入Ni O,詳細(xì)分析了Ni O的含量對(duì)Zn O線性陶瓷電阻的影響,確定了Ni O的最佳含量為15 mol%,得到新四元體系的最優(yōu)配方:70 mol%Zn O-6 mol%Mg O-0.5mol%La2O3-7 mol%Al2O3-1.5 mol%Si O2-15 mol%Ni O。并對(duì)Zn O線性陶瓷電阻的制備工藝進(jìn)行了改善,通過(guò)對(duì)燒結(jié)溫度的探討,確定了燒結(jié)溫度的最優(yōu)值為1320°C。研究發(fā)現(xiàn),Ni O的添加能夠降低Zn O線性陶瓷電阻的非線性系數(shù),提高電阻溫度系數(shù),不同的燒結(jié)溫度對(duì)Zn O線性陶瓷電阻的電學(xué)性能的影響也有很大的差異。當(dāng)Ni O的最佳含量為15 mol%且燒結(jié)溫度為1320°C時(shí),所得的電阻率為204.8Ω·cm,非線性系數(shù)為1.18,電阻溫度系數(shù)為1.34×10-4/°C,能量密度達(dá)到最大值為809 J/cm3。其次在新四元體系以及最佳燒結(jié)溫度下,通過(guò)改變稀土氧化物的種類(lèi)以及含量,研究了La2O3、Y2O3、Sm2O3三種稀土氧化物對(duì)Zn O線性陶瓷電阻的微觀結(jié)構(gòu)以及電學(xué)性能的影響。研究發(fā)現(xiàn)La2O3在Zn O線性電阻中影響要大于Y2O3、Sm2O3對(duì)Zn O線性陶瓷電阻的影響。添加有0.25 mol%的La2O3樣品在1320°C下燒結(jié)時(shí),展現(xiàn)出優(yōu)越的電學(xué)性能,其中電阻率為253.5Ω·cm、電阻溫度系數(shù)為1.7×10-4/°C,非線性系數(shù)最低為1.16,同時(shí)隨著溫度變化,電阻率的老化速度為-1.2%。工業(yè)化生產(chǎn)中,不可避免的接觸含有鐵的設(shè)備,因此本文還在綜合性能較好的Zn O-Al2O3-Mg O基礎(chǔ)體系中添加Fe2O3,研究了不同含量的Fe2O3對(duì)Zn O線性陶瓷電阻微觀結(jié)構(gòu)以及各個(gè)電學(xué)性能的影響。研究發(fā)現(xiàn),Fe2O3能夠很大程度地提高Zn O線性陶瓷電阻的電阻率以及降低非線性系數(shù),但是對(duì)電阻溫度系數(shù)的影響是不利的。當(dāng)Fe2O3的添加量為0.5 mol%,其電阻率達(dá)到最大值為458.4Ω·cm,非線性系數(shù)達(dá)到最小值為1.18,電阻溫度系數(shù)為-1.21×10-3/°C。
[Abstract]:Zn O linear ceramic resistance is a new type of linear resistance material developed on the basis of Zn O varistor at the end of the 80s of last century. Compared with the traditional metal resistance and the oxide containing carbon system resistance, it is not easy to be oxidized, with the advantages of high temperature, small volume, light weight and so on, which satisfy the modern power system hair. At the same time, the small size of the equipment and the light weight requirements. At the same time, its resistivity fluctuation range is small, the small resistance temperature coefficient and the ability to absorb a large amount of energy density make it difficult to break through the current when the circuit is used in parallel. But the current domestic production of Zn O linear ceramic resistance It is said that the repeatability and reliability of its resistivity can not meet the needs of industrialization, so we also need to further deepen the analysis of the Zn O linear ceramic resistance basic theory and performance stability, so as to improve its comprehensive performance. This paper, based on the previous human research, selects the Zn O-Al2O3-Mg O system with better comprehensive performance as the base. The foundation system, adding Ni O, prepared a new four element system, improved the sintering process, and discussed in detail the influence of different rare earth oxides on the microstructure and electrical properties of Zn O linear ceramic resistance, and tried to add Fe2O3 to the Zn O-Al2O3-Mg O base system with good comprehensive properties, and studied Fe2O3 to Zn O linear ceramic electricity. The influence of microstructure and electrical properties is laid on the basis of industrial production. First, in this paper, the effect of Ni O content on Zn O linear ceramic resistance is analyzed in detail in the Zn O-Al2O3-Mg O basic system with good comprehensive performance. The optimum content of Ni O is 15 mol%, and the optimal formula of the new four element system is obtained: 70 Mol%Zn O-6 mol%Mg O-0.5mol%La2O3-7 mol%Al2O3-1.5 mol%Si O2-15 mol%Ni O. and the preparation process of Zn O linear ceramic resistance are improved. By discussing the sintering temperature, the optimum value of the sintering temperature is determined to be 1320 degrees C.. The influence of temperature coefficient and different sintering temperature on the electrical properties of Zn O linear ceramic resistors is also very different. When the optimum content of Ni O is 15 mol% and the sintering temperature is 1320 C, the obtained resistivity is 204.8 Omega cm, the nonlinear coefficient is 1.18, the resistance temperature coefficient is 1.34 x 10-4/ / C, and the energy density reaches the maximum value of 809 J/cm3.. Secondly, the effects of three rare earth oxides of La2O3, Y2O3, Sm2O3 on the microstructure and electrical properties of Zn O linear ceramic resistors were studied by changing the types and content of rare earth oxides at the new ternary system and the optimum sintering temperature. The study found that La2O3 in the linear resistance of Zn O was greater than Y2O3, Sm2O3 to Zn O linear ceramics. The influence of resistance. When adding 0.25 mol% La2O3 samples under 1320 degree C, the electrical properties are superior, of which the resistivity is 253.5 Omega cm, the resistance temperature coefficient is 1.7 x 10-4/ C, the nonlinear coefficient is lowest 1.16. At the same time, the aging speed of resistivity is inevitable in the industrial production of -1.2%. with the change of temperature. With iron equipment, this paper also added Fe2O3 in the Zn O-Al2O3-Mg O base system with better comprehensive performance. The influence of Fe2O3 on the microstructure and electrical properties of Zn O linear ceramic resistance is studied. It is found that Fe2O3 can greatly improve the resistivity of Zn O linear ceramic resistance and reduce the nonlinearity. The coefficient, but the effect on the temperature coefficient of resistance is unfavorable. When the addition of Fe2O3 is 0.5 mol%, the maximum resistivity is 458.4 Omega cm, the nonlinear coefficient reaches the minimum value of 1.18 and the resistance temperature coefficient is -1.21 x 10-3/ C.

【學(xué)位授予單位】：陜西科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類(lèi)號(hào)】：TQ174.1

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