本文選題：阻變式隨機存儲器 + 氧化石墨烯��； 參考：《東北師范大學》2017年碩士論文

【摘要】：按照摩爾定律的發(fā)展規(guī)律,傳統(tǒng)的浮柵存儲器受限于電荷遂穿等原因,尺寸已經(jīng)逼近物理極限,難以滿足大數(shù)據(jù)存儲的需求。開發(fā)基于不同工作機理和結構的新型信息存儲器件有助于突破這種摩爾定律限制。非易失性阻變存儲器(RRAM)由于其轉換速度快、保持時間長、功耗低以及器件結構簡單等優(yōu)點引起人們的關注。傳統(tǒng)的RRAM器件是金屬/絕緣體/金屬(M/I/M)這種三明治結構,通過電學信號刺激實現(xiàn)器件阻態(tài)變化來進行信息存儲。目前為止在很多種材料中發(fā)現(xiàn)電阻轉變效應,包括金屬氧化物、金屬硫化物、有機物、非晶硅、碳等。氧化石墨烯(GO)材料以其獨特的光電特性,在微電子領域展示出良好的應用前景。GO材料具有制備工藝簡單,可大面積成膜、電學性質(zhì)易于調(diào)控等優(yōu)點近年來被用于阻變存儲器件研究。研究表明GO在展示出電致阻變特性的同時兼具柔性、透明等優(yōu)點,是極具潛力的下一代存儲材料。然而,GO基RRAM的阻變機理尚不明確,器件性能較低等問題一直制約其進一步發(fā)展。因此,本論文在氧化石墨烯阻變存儲器工作機理、器件阻變性能提升等方面展開工作。具體研究如下:阻變工作機理探究:利用具有不同氧活性的電極構筑了Al/GO/Al器件、Au/GO/Au器件,探究了不同電極的氧化石墨烯基阻變存儲器的阻變行為。通過器件電學特性表征、電子傳導機制研究,初步證實了其阻變機制是sp2和sp3態(tài)的相互轉換的過程。利用紫外光刻的方法構筑平面結構的Au/GO/Au微尺度器件,通過對原位觀測GO阻變過程中材料結構變化以及利用XPS能譜、Raman光譜表征GO材料阻變前后的成分變化進行分析,進一步明確了GO阻變機理。阻變性能提升探究:針對GO阻變存儲器件導電通道形成與斷開過程的隨機性導致的器件參數(shù)波動性以及轉變電壓較大等問題,本論文采用TiO2納米粒子摻雜以及紫外光輻照等方法,在GO內(nèi)部構筑局域化電場來控制材料內(nèi)部氧分布。研究表明,局域電場能夠降低導電通道的隨機性,有效提升器件阻變穩(wěn)定性,此外,器件功耗也被有效地降低。該方法是一種簡單、實用的優(yōu)化GO阻變存儲器穩(wěn)定性的手段。
[Abstract]:According to the law of Moore's law, the traditional floating gate memory is limited by charge tunneling, and the size is close to the physical limit, so it is difficult to meet the storage requirements of big data.The development of new information storage devices based on different working mechanisms and structures is helpful to break through the limitation of Moore's law.Non-volatile resistive memory (RRAM) has attracted much attention due to its high conversion speed, long retention time, low power consumption and simple device structure.The traditional RRAM device is a sandwich structure of metal / insulator / metal / metal / I / I / M, which stores the information by electrical signal stimulation.So far, resistance transition effects have been found in many materials, including metal oxides, metal sulfides, organic compounds, amorphous silicon, carbon and so on.Because of its unique optoelectronic properties, graphene oxide (GOO) materials have shown good application prospects in the field of microelectronics. Go materials have a simple preparation process and can be used to form films in a large area.Electrical properties are easy to control and have been used in the study of resistive memory devices in recent years.It is shown that go has the advantages of flexibility and transparency, and it is the next generation storage material with great potential.However, the resistance mechanism of go based RRAM is not clear, and the low performance of the device has been restricting its further development.Therefore, the mechanism of graphene oxide resistive memory and the improvement of device resistance performance are studied in this paper.The specific research is as follows: the mechanism of resistance work: Al/GO/Al devices are fabricated by using the electrodes with different oxygen activity. The resistance behavior of graphene oxide based resistive memory with different electrodes is investigated.The electrical properties of the device and the study of the electron conduction mechanism indicate that the resistance mechanism is a process of interconversion between sp2 and sp3 states.Au/GO/Au microdevices with planar structure were constructed by UV lithography. The changes of material structure during go resistance were observed in situ and the composition changes before and after go resistance were characterized by XPS spectroscopy.The mechanism of go resistance is further clarified.Research on the improvement of Resistance performance: aiming at the problem of the fluctuation of device parameters and the large transition voltage caused by the randomness of the formation and disconnection of conductive channels in go resistive memory devices,In this paper, TiO2 nanoparticles were doped and ultraviolet radiation was used to construct localized electric field inside go to control the oxygen distribution in the material.It is shown that the local electric field can reduce the randomness of the conductive channel, effectively enhance the device resistance stability, in addition, the device power consumption is also effectively reduced.This method is a simple and practical method to optimize the stability of go resistive memory.
【學位授予單位】：東北師范大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TQ127.11;TP333

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本文編號：1761423