發(fā)布時(shí)間：2018-03-10 02:05

  本文選題：UV-LIGA　切入點(diǎn)：微電鑄　出處：《中北大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

【摘要】：隨著MEMS技術(shù)的不斷發(fā)展,微機(jī)電系統(tǒng)在光學(xué)、電子學(xué)、生物醫(yī)學(xué)等其他領(lǐng)域的應(yīng)用逐漸增多。而微電鑄工藝作為MEMS工藝中的關(guān)鍵部分,也得到了越來越多研究者的重視。微細(xì)陣列電極由多根排列整齊的微細(xì)電極組合而成,具有許多非常優(yōu)良的電化學(xué)性能,在微細(xì)加工和生物科學(xué)等領(lǐng)域應(yīng)用廣泛。本文選取三維金屬微細(xì)陣列電極為加工對(duì)象,首先對(duì)所要加工的微電極陣列進(jìn)行了特征尺寸的標(biāo)定,然后對(duì)基于種子層位置的兩種電鑄生長方式盲孔填充、模具成型過程的原理做了簡單的介紹,接著對(duì)實(shí)驗(yàn)中選擇的KMPR光刻膠與BPN-65A光刻膠的基本性質(zhì)以及甩膠、烘膠、曝光等參數(shù)都做了具體的探究,然后指出了電鍍與電鑄的異同之處,并對(duì)電鍍液的反應(yīng)機(jī)理以及鍍液中各成分的作用和工藝條件對(duì)電鍍效果的影響都做了詳細(xì)的分析。接著進(jìn)行了微電極陣列的加工制備,分別使用KMPR光刻膠與BPN光刻膠甩出指定的厚度,經(jīng)前烘、紫外曝光、后烘、顯影等步驟制備出所需膠模結(jié)構(gòu),根據(jù)電鑄方法的不同,分別在甩膠前與后烘后進(jìn)行了種子層的濺射,濺射金屬為銅,約300nm(前烘前濺射時(shí),先濺射一層粘附層金屬層鉻約50nm,再濺射種子層),選擇190g/mL的CuSO4·5H2O、60g/L的H2SO4、70mg/L的氯離子以及適量的添加劑配置成的電鑄液,并采用酸性鑄銅工藝,設(shè)置電流密度1.5A/dm2,進(jìn)行電鑄,經(jīng)拋光處理后,分別得到了三種截面形狀的多種微細(xì)陣列電極,最后在場發(fā)射掃描電子顯微鏡下對(duì)所制得的微細(xì)陣列電極進(jìn)行了觀察比對(duì)。論文從工藝的角度出發(fā),以微電極陣列為研究對(duì)象,對(duì)KMPR光刻膠、BPN光刻膠以及盲孔填充和模具電鑄兩種電鑄填充方式做了簡單的探究,對(duì)今后微電極的加工以及微電鑄的研究提供了一定的幫助。
[Abstract]:With the development of MEMS technology, the application of MEMS in optics, electronics, biomedicine and other fields is increasing. It has been paid more and more attention by many researchers. The microarray electrode is composed of many well-arranged microelectrodes and has many excellent electrochemical properties. It is widely used in the fields of micromachining and biological science. In this paper, three-dimensional metal microarray electrodes are selected as machining objects, and the characteristic dimensions of the microelectrode arrays are calibrated. Then, the paper introduces the principle of blind hole filling and die forming process of two kinds of electroforming growth methods based on the position of seed layer, and then introduces the basic properties of KMPR photoresist and BPN-65A photoresist selected in the experiment, as well as the basic properties of throwing glue and baking glue. The exposure and other parameters are studied in detail, and then the similarities and differences between electroplating and electroforming are pointed out. The reaction mechanism of electroplating solution and the effect of various components and process conditions on the electroplating effect were analyzed in detail. Then the fabrication of microelectrode array was carried out. KMPR photoresist and BPN photoresist were used to separate out the specified thickness, and the structure of the mould was prepared by the steps of pre-baking, ultraviolet exposure, post-drying and development. According to the different electroforming methods, The sputter of seed layer was carried out before and after baking respectively. The sputtering metal was copper, about 300 nm before and after drying. First sputtering a layer of metal layer about 50nmCr, then sputtering the seed layer, selecting 190g / mL CuSO4 路5H2O 60g / L H2SO4H2SO4H2SO4 60g / L and proper amount of additive to configure the electroforming solution, and using acidic copper casting process, setting the current density of 1.5Adm2for electroforming, and after polishing, the electroforming was carried out. Three kinds of microarray electrodes with different cross-section shapes were obtained respectively. Finally, the microarray electrodes were observed and compared under the field emission scanning electron microscope. From the point of view of technology, the microelectrode array was taken as the research object. This paper makes a simple research on KMPR photoresist, blind hole filling and die electroforming filling, and provides some help for the processing of microelectrode and the research of microelectroforming in the future.
【學(xué)位授予單位】：中北大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TQ153.4

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