發(fā)布時間：2018-02-20 23:41

  本文關(guān)鍵詞： TiN 離子束輔助沉積 電阻率 熱穩(wěn)定性　出處：《中國地質(zhì)大學(xué)(北京)》2017年碩士論文　論文類型：學(xué)位論文

【摘要】：TiN是一種性能優(yōu)良應(yīng)用廣泛的過渡族金屬化合物,其制備方法有化學(xué)氣相沉積、電弧離子鍍、磁控濺射、離子束輔助沉積等。改變Ti/N的化學(xué)配比、離子轟擊能量及沉積溫度可以改善TiN薄膜的性能。TiN常常需要在高溫下長時間服役,然而目前關(guān)于TiN在高溫下長時間服役的報道還比較少。本文以探究離子束輔助沉積工藝參數(shù)對TiN薄膜組織、結(jié)構(gòu)、性能和高溫穩(wěn)定性為目的,研究了N2/(N2+Ar)流量比、基體溫度、輔助沉積離子能量對薄膜的組織、結(jié)構(gòu)、性能,以及在真空退火中,其發(fā)生的變化。研究結(jié)果表明:(1)隨著N2/(N2+Ar)流量比的增大,薄膜中的N含量顯著上升。同時,N2/(N2+Ar)流量比的上升還引起了薄膜擇優(yōu)取向的變化,薄膜從(200)取向擇優(yōu)逐步轉(zhuǎn)化為了(220)取向擇優(yōu)。當(dāng)薄膜呈現(xiàn)顯著(200)擇優(yōu)取向時,薄膜的電阻率較小。在實驗中不同N2/(N2+Ar)流量比制得的薄膜的取向隨著退火的進行而有所變化,短時間退火能夠使得薄膜延退火前的優(yōu)勢取向方向繼續(xù)生長,薄膜電阻率有所下降。退火時間延長后至10-20小時后,部分薄膜產(chǎn)生熱裂,電阻率大幅上升,薄膜失效。(2)在低溫狀態(tài)下沉積的TiN薄膜,由于溫度較低膜層粒子的遷移能力差,因此,退火前薄膜呈現(xiàn)自由生長狀態(tài)。沉積溫度升高薄膜的(220)及(200)取向開始逐漸占據(jù)優(yōu)勢。300℃沉積時,薄膜的(220)取向的織構(gòu)化系數(shù)最大,薄膜的電阻率最低。不同基體溫度沉積的Ti N薄膜在退火后薄膜均未發(fā)生失效。退火過程中,膜層粒子獲得遷移能力,逐漸向能量較低的取向轉(zhuǎn)化。退火1小時,薄膜的電阻率有所下降,退火10小時和20小時后,薄膜的電阻率變化不大。(3)離子轟擊能量,會改變薄膜在沉積態(tài)的取向。當(dāng)薄膜的離子轟擊能量過高時,薄膜的擇優(yōu)取向被打碎,薄膜各取向的織構(gòu)化系數(shù)近似相同。退火后,薄膜向能量較低取向轉(zhuǎn)變。離子轟擊可能使得薄膜變得致密,因而,電阻率下降。不同離子轟擊能量條件下制備的薄膜在1小時退火后電阻率有所下降,在退火10小時后,隨著退火時間的延長,其電阻率無明顯變化。(4)實驗制得的TiN薄膜的最小電阻率約為36.5μ?·cm。薄膜在800℃真空環(huán)境中服役20小時未發(fā)生失效。
[Abstract]:TiN is a kind of transition metal compound with excellent properties and wide application. Its preparation methods include chemical vapor deposition, arc ion plating, magnetron sputtering, ion beam assisted deposition, etc. Ion bombardment energy and deposition temperature can improve the properties of TiN thin films. Tin often requires long service at high temperatures. However, there are few reports about the long service of TiN at high temperature. In order to investigate the effect of ion beam assisted deposition process parameters on the structure, structure, properties and high temperature stability of TiN films, the flow ratio of N _ 2 / N _ 2 and the substrate temperature are studied. The effect of auxiliary deposition ion energy on the structure, structure, properties, and the changes of the film during vacuum annealing. The results show that: 1) with the increase of N _ 2 / N _ 2 / N _ 2 ar / N _ 2 flow ratio, The N content in the films increased significantly, and the increase of N _ 2 / N _ 2 flow ratio also led to the change of the preferred orientation of the films. In the experiment, the orientation of the films prepared by different N _ 2 / N _ 2 ar / N _ 2 flow ratio varies with the annealing process, and short time annealing can make the films continue to grow in the direction of dominant orientation before annealing. The resistivity of the films decreased. After annealing time was prolonged to 10-20 hours, some of the films produced hot cracks, and the resistivity of the films increased significantly. The TiN films deposited at low temperature due to the poor migration ability of the particles at lower temperature, Therefore, the films showed free growth state before annealing. When the orientation of the films began to occupy the dominant position at .300 鈩，

本文編號：1520367