本文關(guān)鍵詞： 鏑摻雜鈦酸鋇 X射線衍射 介電性能 EPR SEM　出處：《東北師范大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：本實驗主要通過在鈦酸鋇中添加稀土元素Dy進(jìn)行單摻或雙摻來改變陶瓷性能,研充相關(guān)缺陷化學(xué)。運用XRD、SEM、EDS、EPR、RS以及介電測試系統(tǒng)等微觀分析手段,討論了(Ba1-xDyx)(Ti1-xDyx)O3單摻和(Ba1-xLax)(Ti1-xDyx)O3、(Ba1-xDyx)(Ti1-x/2Cax/2)O3、 (Ba1-xRx)(Ti1-xDyx)03 (R= Eu、Gd、Tb)雙摻系列陶瓷改性行為和微觀補償機(jī)理,并最終制得了符合高介電Y5V和介電溫度穩(wěn)定型的X8R規(guī)格介質(zhì)材料。同時,還對不同燒結(jié)溫度下(Ba1-xDyx)Ti1-x/4O3 (x=0.01)陶瓷的固溶度、位占據(jù)、相結(jié)構(gòu)和表面形貌進(jìn)行了研究。Dy在自補償模式(Ba1-xDyx)(Ti1-xDyx) O3中的固溶度是x=0.07。隨著x含量的增加,自補償模式的介電行為從一級相變轉(zhuǎn)變?yōu)閿U(kuò)散相變再轉(zhuǎn)變?yōu)榫哂懈呓殡姵?shù)的Y7R介電溫度穩(wěn)定型。一個非常強的g=1.974 EPR信號出現(xiàn)在有意設(shè)計的Ti-空位單相(Ba1-xDyx)Ti1-x/4O3陶瓷中。該信號被視為Ba-空位缺陷信號。(Ba1-xDyx)Ti1-x/4O3陶瓷的真實分子式可以表示為(Ba1-xDy3x/4)(Ti1-x/4Dyx/4)O3。在(Ba1-xLax)(Ti1-xDyx)O3 (0.03≤x≤0.20)陶瓷中,La3+-Dy3+缺陷復(fù)合體的固溶度為x=0.17。隨著摻雜量x的增加,晶胞體積呈線性增大趨勢并滿足Vegard's定律。Tm隨LaBa·-DYTi'含量的增加以-23℃/at.%的速度向低溫方向移動。x=0.05和0.07的BLTD陶瓷滿足介電Y5V規(guī)格。一個弱的g=2.004EPR信號出現(xiàn)在所有的BLTD陶瓷中,該信號被視為Ti空位缺陷信號。La3+離子在Ba位的排他性占據(jù)和Dy3+離子的自補償模式傾向要為LaBa·-DYTi'缺陷復(fù)合體的形成,少量Ti空位的出現(xiàn)和DyB。-DyTi缺陷復(fù)合體的形成負(fù)責(zé)。(Ba1-xDyx)(Ti1-x/2Cax/2)O3 (0.04≤x≤0.30) (BDTC)陶瓷的固溶度是x=0.15。BDTC的單胞體積隨著x的增加總體呈現(xiàn)增大趨勢。x≤0.08時,Tm隨摻雜含量的增加逐漸向低溫移動。BDTC陶瓷在x=0.10和0.15時滿足介電溫度穩(wěn)定型X8R規(guī)格。所有BDTC試樣中均出現(xiàn)g=2.004的Ti空位缺陷信號。摻雜量x=0.06時,(Ba1-xRx)(Ti1-xDyx)O3(其中：R=Eu、Gd、Tb)系列陶瓷完全并入BaTiO3晶格形成相應(yīng)固溶體。在Eu/Dy共摻雜的BaTiO3中Eu離子以混和價態(tài)Eu3+/Eu2+存在于BaTiO3的Ba位；部分Dy3+不可避免地進(jìn)入Ba位。在Gd/Dy共摻雜的BaTiO3中觀察到了Gd3+所特有的g=1.984信號。TD6陶瓷中部分Tb以Tb4+形式進(jìn)入Ti位,并伴隨著少量的Dy3+進(jìn)入Ba位。隨著燒結(jié)溫度的增加,摻雜劑在(Ba1-xDyx)Ti1-x/4O3 (x=0.01)陶瓷中擴(kuò)散程度增大；有利于Dy從鈦酸鋇陶瓷的Ba-位擴(kuò)散進(jìn)入Ti-位最終引起單胞體積變大。燒結(jié)溫度沒有對BD1AT的相結(jié)構(gòu)造成影響。
[Abstract]:In this experiment, the properties of ceramics were changed by adding rare earth element Dy to barium titanate, and the related defect chemistry was studied. The microcosmic analysis methods such as RS and dielectric measurement system are used to discuss the monoincorporation of Ti1-xDyxO3 and Ti1-xDy xO3Ti1-xDy xO3.The results are as follows: (1) Ba _ (1) -x Dy _ (x) O _ (3). Ba1-xDyx / Ti1-x / 2Cax-2O3, Ba1-xRxTy / Ti1-xDyxc03 = EuGd. The modified behavior and microcosmic compensation mechanism of Tb- doped series ceramics were obtained. Finally, the X8R dielectric materials which accord with the high dielectric Y5V and dielectric temperature stability type were prepared. At the same time. The solid solubility and potential occupation of Ba1-xDyxTi1-xTi1-x / 4O3OXX 0.01) ceramics at different sintering temperatures were also investigated. The phase structure and surface morphology were studied. The solution degree of Dy in the self-compensated mode Ba1-xDyxTi1-xDyxO3 is x0. 07. With the increase of x content. The dielectric behavior of self-compensation mode is changed from first-order phase transition to diffusion phase transition to Y7R dielectric temperature stable type with high dielectric constant. A very strong gn 1.974. The EPR signal appears in the intentionally designed Ti-vacancy single phase (. In Ba1-xDyx)Ti1-x/4O3 ceramics. This signal is regarded as Ba-vacancy defect signal. Ba-Ba1-xDyx). The true molecular formula of Ti1-x/4O3 ceramics can be expressed as Ba1-xDy3x / 4x / 4Dyx / 4Dyx / 4Dy / O3. In Ti1-xDyx)O3 0.03 鈮，

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