Output light power of InGaN-based violet laser diodes improv
發(fā)布時(shí)間：2023-04-29 00:21
The upper waveguide(UWG) has direct influences on the optical and electrical characteristics of the violet laser diode(LD) by changing the optical field distribution or barrier of the electron blocking layer(EBL). In this study, a series of In GaN-based violet LDs with different UWGs are investigated systematically with LASTIP software. It is found that the output light power(OLP) under an injecting current of 120 mA or the threshold current(Ith) is deteriorated when the UWG is u-In0.02
【文章頁數(shù)】：5 頁
本文編號(hào)：3804782
【文章頁數(shù)】：5 頁
本文編號(hào)：3804782
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