The performance of an InGaN/GaN multiple quantum well（MQW） based visible-light Schottky photodiode（PD）is improved by optimizing the source flow of TEGa during In Ga N QW growth. The samples with five-pair InGaN/GaN MQWs are grown on sapphire substrates by metal organic chemical vapor deposition. From the fabricated Schottky-barrier PDs, it is found that the smaller the TEGa flow, the lower the reverse-bias leakage is. The photocurrent can also be enhanced by depositing the In GaN QWs with using ... 

【文章來源】：Chinese Physics B. 2017,26(08)EISCI

【文章頁數(shù)】：6 頁

【文章目錄】：
1. Introduction
2. Experimental procedure
3. Results and discussion
4. Conclusions


【參考文獻(xiàn)】：
期刊論文
[1]InGaN基可見光光電二極管研究進(jìn)展[J]. 黎斌,衛(wèi)靜婷,譚露雯.  廣東開放大學(xué)學(xué)報. 2018(03)

博士論文
[1]面向可見光通信的硅基氮化物同質(zhì)光電子集成芯片研究[D]. 高緒敏.南京郵電大學(xué) 2018



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