在SiO₂/Si(P⁺⁺)襯底上制備了多層MoS₂背柵器件并進行了測試.通過合理優(yōu)化和采用10 nm SiO₂柵氧,得到了良好的亞閾值擺幅86 mV/dec和約107倍的電流開關比.該器件具有較小的亞閾值擺幅和較小的回滯幅度,表明該器件具有較少的界面態(tài)/氧化物基團吸附物.由柵極漏電造成的漏極電流噪聲淹沒了該器件在小電流(¹0^-13A)處的信號,限制了其開關比測量范圍.基于本文以及前人工作中MoS₂器件的表現(xiàn),基于薄層SiO₂柵氧的MoS₂器件表現(xiàn)出了良好的性能和潛力,顯示出豐富的應用前景. 

【文章來源】：紅外與毫米波學報. 2017,36(05)北大核心EISCICSCD

【文章頁數(shù)】：7 頁

【部分圖文】：

背柵多層MoS場效應晶體管制備流程，(b)制備

紅外與毫米波學報36卷Fig．3(a)Schematicofthetrapsourcesthatcausehysteresisintwo-directiongatesweeps．(b)Transfercharacteristicsofatwo-directionsweep圖3(a)在雙向掃描中引起回滯的缺陷態(tài)，(b)雙向掃描的轉(zhuǎn)移特性曲線chedmoleculesandtheinterfacetrapsactasanadjusta-blecapacitanceinserieswiththechannelregionandgatedielectric，thusbringingashifttothetransfercurves．Themagnitudeofvoltageshiftcorrespondstotheamountoftraps．AspresentedinFig．3(b)，thehysteresiswidthis0．13VatVDS=0．1V，andexpandsas0．17VatVDS=0．5V，wherethedeviceismeasuredinadarkcham-berat300K，andtherelativehumidityiscontrolledun-der30%［44］．Thesmallhysteresis［16，29，43，45］ofourde-viceindicatesamildinfluenceinducedbythetrap-formed‘capacitance’．Theexpandofthehysteresiswin-dowatVDS=0．5Vmightbejointlyinducedbytheresid-ualattachmentfromthe0．1Vtestandanenhancedab-sorptionofimpuritiesinthe0．5Vtestduetostrongere-lectroncurrentinMoS2．ToeliminatetheimpuritiesattachedtoMoS2mem-brane，onecansimplyapplyanegativevoltagestresstothedevice，whichwoulddecreasethe‘dopinglevel’inMoS2，thereforelesspolarmolecules(water)orelectro-philicmoleculeswillkeepstickinginthe2DMoS2lay-ers［43］．Adryeratmosphere［44］oravacuumtestingenvi-ronmentalsoworksindecreasingthehysteresis．Vacuumannealingwouldremovetheforeignmattermorethor-oughly［22］．However，aslongastheMoS2channelisex-posedtoambient，thedevice’sper

ndEOT．DuringawideDitrangefrom3×1011to8×1012cm-2·eV-1，atrendisobservedinFig．5(b)thattheSSvaluedecreaseswhenEOTbecomesthinner．Interestingly，noobviousevidenceisshownherethattheDitofMoS2/SiO2interfaceislargerthanthatofMoS2/high-κdielectricin-Fig．5(a)TransfercharacteristicsofBGML-MoS2deviceswithdifferentthicknessofSiO2insulator，(b)SSasafunctionofEOTwithdifferentdielectric，(c)ThemobilityofBGMoS2deviceswithdifferentdielectric圖5(a)具有不同SiO2介質(zhì)厚度的背柵多層MoS2器件的轉(zhuǎn)移特性，(b)亞閾值斜率與不同電介質(zhì)的等效氧化層厚度(EOT)的關系，(c)基于不同介質(zhì)材料的背柵器件的遷移率terface．Ｒef.［54］concludesthatthedistributionofDitandthepeakofDitatnativeMoS2MOSinterfacesarenotstronglydependentonthegatedielectrics．Sincetheatta-chedimpuritieswillintroduceahysteresistotheBGde-vices，theDitcalculatedhereisprobablyasumofinter-facetrapsandchannelattachments．FurtherstudiesshouldbedevelopedtoresearchtheimpactonSSbroughtbyambientimpurities．Insummary，theSSofaSiO2-547


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