Electrical and dielectric characterization of Au/ZnO/n-Si de
發(fā)布時(shí)間：2021-10-22 08:23
Au/Zn O/n-type Si device is obtained using atomic layer deposition（ALD） for Zn O layer, and some main electrical parameters are investigated, such as surface/interface state（Nss）, barrier height（Φb）, series resistance（Rs）, donor concentration（Nd）, and dielectric characterization depending on frequency or voltage. These parameters are acquired by use of impedance spectroscopy measurements at frequencies ranging from 10 k Hz to 1 MHz and the direct current（DC） bias voltages in a range from-2 V to ...
【文章來(lái)源】：Chinese Physics B. 2017,26(02)EISCI
【文章頁(yè)數(shù)】：7 頁(yè)
本文編號(hào)：3450724
【文章來(lái)源】：Chinese Physics B. 2017,26(02)EISCI
【文章頁(yè)數(shù)】：7 頁(yè)
本文編號(hào)：3450724
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