發(fā)布時(shí)間：2021-10-07 01:00

　　從紫外、可見(jiàn)到紅外的高性能寬光譜探測(cè)器有著廣泛的科技應(yīng)用。這個(gè)工作展示了一種基于范德華力的石墨烯與其氟化功能衍生物的異質(zhì)結(jié)光電探測(cè)器。發(fā)現(xiàn)了紫外（255納米）到中紅外（4.3微米）一致的寬光譜響應(yīng),與本征石墨烯光電探測(cè)器相比,器件的響應(yīng)度有了三個(gè)量級(jí)的提高。寬光譜的響應(yīng)是由于空間上不均一聯(lián)合的sp2區(qū)域的協(xié)同量子限域效應(yīng),和sp3區(qū)域局域態(tài)對(duì)光生載流子的俘獲行為。對(duì)sp3鍵角,和sp3/sp2區(qū)域的大小與比值的調(diào)控可實(shí)現(xiàn)對(duì)光電響應(yīng)的調(diào)控。此外,區(qū)分了光電響應(yīng)由于sp3和sp2納米區(qū)域的不同光生載流子的俘獲時(shí)間。該工作提出的方案對(duì)制備高性能寬光譜石墨烯光電探測(cè)器提供了新的思路。更進(jìn)一步,以功能氟化的CVD石墨烯為例。區(qū)別于傳統(tǒng)的等離子體刻蝕的“硬膜版”,展示了一種基于溶液的“軟膜板”方法,實(shí)現(xiàn)了可選擇的去氟化,制備了精度高達(dá)50納米的石墨烯/氟化石墨烯橫向異質(zhì)結(jié)。由此避免了石墨烯轉(zhuǎn)移過(guò)程中的氧等離子體刻蝕,原子尺度厚的高質(zhì)量連續(xù)膜的表面得以保護(hù),這對(duì)高性能尤其是高速光電探測(cè)極為重要。進(jìn)而,制備了這種石墨烯橫向異質(zhì)結(jié)的MSM高速光電探測(cè)器,得到了從深紫外（200納米）到近紅外（1100納米... 

【文章來(lái)源】：浙江大學(xué)浙江省 211工程院校 985工程院校 教育部直屬院校

【文章頁(yè)數(shù)】：100 頁(yè)

【學(xué)位級(jí)別】：博士

【文章目錄】：
Abstract
摘要
List of Abbreviations
Chapter 1: Literature Review
    1.1 Graphene Introduction
    1.2 Graphene Production Methods
        1.2.1 Mechanical Exfoliation of Graphene
        1.2.2 Epitaxial Growth on Silicon Carbide
        1.2.3 Chemical Route
        1.2.4 CVD (Chemical Vapor Deposition) Graphene
    1.3 Graphene Applications
    1.4 Graphene Photodetectors
        1.4.1 Metal-Graphene Metal Photodetectors
        1.4.2 Graphene/ Semiconductor Heterostructure Photodetectors
            1.4.2.1 Graphene/Si Photodetector
            1.4.2.2 Graphene/GaNPhotodetector
            1.4.2.3 Graphene/Ge Photodetector
    1.5 Thesis Outline
    1.6 Source of Funding
Chapter 2: Fluorinated Graphene: Synthesis and Characterizations
    2.1 Introduction
    2.2 CVD Growth of Graphene
    2.3 Modified Transfer of Graphene
    2.4 Raman Analysis of Graphene
    2.5 Fluorination of Graphene
    2.6 Characterizations of Fluorinated Graphene
        2.6.1 XPSAnalysis of FG
        2.6.2 Raman Analysis of FG
        2.6.3 Electrical Properties of FG
Chapter 3: Broadband Fluorographene Photodetector
    3.1 Introduction
    3.2 Results and Discussions
    3.3 Experimental Methods
Chapter 4: Solvent based Soft Patterning of Graphene Lateral Heterostructures forBroadband High-Speed MSM Photodetectors
    4.1 Introduction
    4.2 Solvents Based De-fluorination of FG
    4.3 Simulation Results
    4.4 Graphene-FG Lateral Heterostructures
    4.5 Graphene-FG Heterostructure Photodetectors
    4.6 Materials and Methods
    4.7 Characterizations and Measurements
Chapter 5: High-Performance, Flexible Graphene/Ultra-thin Silicon UV Image Sensor
    5.1 Introduction
    5.2 Device Fabrication Process
    5.3 Device Characterizations
    5.4 Results and Discussions
Chapter 6: Black Phosphorus Enhanced Silicon IR Photodetector
    6.1 Introduction
    6.2 Device Fabrication Process
    6.3 Results and Discussions
Chapter 7: Conclusion
References
List of Publication



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