Influence of surface states on deep level transient spectros
發(fā)布時(shí)間：2021-08-03 00:14
Deep level transient spectroscopy（DLTS） as a method to investigate deep traps in AlGaN/GaN heterostructure or high electron mobility transistors（HEMTs） has been widely utilized.The DLTS measurements under different bias conditions are carried out in this paper.Two hole-like traps with active energies of Ev + 0.47 eV,and Ev + 0.10 eV are observed,which are related to surface states.The electron traps with active energies of Ec-0.56 eV are located in the channel,th...
【文章來(lái)源】：Chinese Physics B. 2016,25(06)EISCI
【文章頁(yè)數(shù)】：5 頁(yè)
本文編號(hào)：3318546
【文章來(lái)源】：Chinese Physics B. 2016,25(06)EISCI
【文章頁(yè)數(shù)】：5 頁(yè)
本文編號(hào)：3318546
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