Plasma atomic layer etching is proposed to attain layer-by-layer etching, as it has atomic-scale resolution, and can etch monolayer materials. In the etching process, ion energy and angular distributions（IEADs） bombarding the wafer placed on the substrate play a critical role in trench profile evolution, thus importantly flexibly controlling IEADs in the process. Tailored bias voltage waveform is an advisable method to modulate the IEADs effectively, and then improve the trench profile. In this ... 

【文章來源】：Plasma Science and Technology. 2017,19(08)EISCICSCD

【文章頁數(shù)】：12 頁

【文章目錄】：
1. Introduction
2. Model descriptions
    2.1. Reactor model
    2.2. Sheath model
    2.3. Trench model
3. Results and discussions
4. Conclusions



本文編號：3164474