It is studied in this paper that the electrical characteristics of the interface between Si O_y N_x/Si N_x stack and silicon wafer affect silicon surface passivation. The effects of precursor flow ratio and deposition temperature of the Si O_y N_x layer on interface parameters, such as interface state density Ditand fixed charge Qf, and the surface passivation quality of silicon are observed. Capacitance–voltage measurements reveal that inserting... 

【文章來(lái)源】：Chinese Physics B. 2016,25(12)

【文章頁(yè)數(shù)】：5 頁(yè)


本文編號(hào)：2988343