The parasitic source resistance（RS） of Al Ga N/Al N/Ga N heterostructure field-effect transistors（HFETs） is studied in the temperature range 300–500 K. By using the measured RSand both capacitance–voltage（C–V） and current–voltage（I–V） characteristics for the fabricated device at 300, 350, 400, 450, and 500 K, it is found that the polarization Coulomb field（PCF） scattering exhibits a significant impact on RSat the above-mentioned different temperatures. Furthermore, in the Al Ga N/Al N/Ga N HFETs... 

【文章來源】：Chinese Physics B. 2017年09期

【文章頁數(shù)】：7 頁

【文章目錄】：
1. Introduction
2. Experiments
3. Results and discussion
4. Conclusions



本文編號：2920879