太陽能電池板用多晶硅的退火行為研究
發(fā)布時間：2019-07-11 09:34
【摘要】：對太陽能電池板用鑄造多晶硅進行了不同溫度的退火處理,用光學顯微鏡、掃描電子顯微鏡和微波光電導衰減儀等研究了退火溫度對多晶硅顯微形貌和少子壽命的影響。結(jié)果表明,退火溫度升高使得位錯尺寸不斷減小而位錯密度不斷增大,位錯會不斷向晶界處富集,且退火溫度越高,這種聚集趨勢越顯著;隨著退火溫度升高,多晶硅的少子壽命先縮短后延長,退火溫度950℃時少子壽命最短。
[Abstract]:The cast polysilicon for solar panels was annealed at different temperatures. The effects of annealing temperature on the microstructure and minority carrier lifetime of polysilicon were studied by means of optical microscope, scanning electron microscope and microwave photoconductive Attenuator. The results show that with the increase of annealing temperature, the dislocation size decreases and the dislocation density increases, and the dislocation is enriched to the grain boundary, and the higher the annealing temperature is, the more significant the aggregation trend is. With the increase of annealing temperature, the minority carrier lifetime of polysilicon is shortened at first and then prolonged, and the minority carrier lifetime is the shortest at 950 鈩，
本文編號：2513055
[Abstract]:The cast polysilicon for solar panels was annealed at different temperatures. The effects of annealing temperature on the microstructure and minority carrier lifetime of polysilicon were studied by means of optical microscope, scanning electron microscope and microwave photoconductive Attenuator. The results show that with the increase of annealing temperature, the dislocation size decreases and the dislocation density increases, and the dislocation is enriched to the grain boundary, and the higher the annealing temperature is, the more significant the aggregation trend is. With the increase of annealing temperature, the minority carrier lifetime of polysilicon is shortened at first and then prolonged, and the minority carrier lifetime is the shortest at 950 鈩，
本文編號：2513055
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