發(fā)布時間：2019-07-03 15:50

【摘要】：無機(jī)電子器件問世以后,基于有機(jī)半導(dǎo)體的電子器件的應(yīng)用前景隨著時間的推移而越發(fā)廣闊,比如有機(jī)發(fā)光二極管、有機(jī)薄膜晶體管等納米器件。其中有機(jī)場效應(yīng)晶體管,簡稱OFET(organic thin-film transistor),在經(jīng)歷了多年的調(diào)查研究后,成為研究的熱點。在本文中,使用(E)-2-(2')-二(苯并呋喃)-4,4'-二(異丙基)-2,3-噻吩并比諾酮-6,6-二乙烯(BFTTME)、(E)-2-(2')-二(苯并呋喃)-4,4'-二(異十一烷基)-2,3-噻吩并比諾酮-6,6-二乙烯(BFTTMD)和聚3-己基噻吩(P3HT)作為有源層材料,使用旋涂法和氣相沉積在硅襯底上制備有機(jī)場效應(yīng)晶體管,并且使用不同濃度的活性層摻雜材料制備OTFT,討論其電性能,表面形貌,晶相變化和機(jī)理。此外,以照相紙為基底采用噴墨印刷方法制備了具有邊柵結(jié)構(gòu)的有機(jī)場效應(yīng)晶體管,并制備了銀電極,有機(jī)活性層和電介質(zhì)層。通過本文實驗,得到以下實驗結(jié)果:(1)使用有機(jī)半導(dǎo)體材料BFTTME和BFTTMD作為活性層制備有機(jī)場效應(yīng)晶體管,所制的器件載流子遷移率可以達(dá)到10-3數(shù)量級(單位為cm2 V-1 s-1),開關(guān)比可以達(dá)到104數(shù)量級。(2)基于有機(jī)半導(dǎo)體材料BFTTME,摻雜P3HT,比例分別為10%、20%、30%、40%、50%、60%、70%、80%、90%,測試器件電學(xué)性能得知,摻雜比例為20%時,對應(yīng)的有機(jī)場效應(yīng)晶體管性能最優(yōu),載流子遷移率為1.2×10-2 cm2 V-1 s-1。(3)使用噴墨打印機(jī)分別在相片紙上打印銀電極、活性層和介電層來制備邊柵結(jié)構(gòu)的有機(jī)場效應(yīng)晶體管,初步研究了銀電極的打印制備,活性層和介電層墨水的制備和打印,制備出具有場效應(yīng)特征曲線的器件,載流子遷移率可以達(dá)到10-3數(shù)量級(單位為cm2 V-1 s-1),開關(guān)比可以達(dá)到102數(shù)量級。
[Abstract]:After the advent of the inorganic electronic device, the application prospect of the electronic device based on the organic semiconductor is more and more extensive over time, such as organic light-emitting diodes, organic thin-film transistors, and the like. The field effect transistor (OFET) is the focus of the study after many years of investigation and research. in this context, (E) -2-(2 ')-bis (benzo-1-)-4,4'-di (isopropyl)-2,3-ethanone is use and is specific to noone-6,6-divinyl (BFTT), (E) -2-(2 ')-bis (benzophenyl) -4,4'-di (iso-undecyl) -2,3-ethanone and binnoone-6,6-divinyl (BFTT MD) and poly 3-hexyl phthalate (P3HT) as active layer material, an aerodrome effect transistor is prepared on a silicon substrate using a spin coating method and a gas phase deposition, And using active layer doping materials with different concentrations to prepare the OTFT, and the electric property, the surface morphology, the crystal phase change and the mechanism of the OTFT are discussed. In addition, an organic field effect transistor with a side gate structure is prepared by using a photographic paper as a substrate by an ink-jet printing method, and a silver electrode, an organic active layer and a dielectric layer are prepared. The results of this paper are as follows: (1) The organic semiconductor material BFTME and BFTT MD are used as the active layer to prepare the organic field effect transistor. The carrier mobility of the fabricated device can be on the order of 10-3 (in cm2 V-1s-1), and the switching ratio can reach the order of 104. (2) Based on the organic semiconductor material BFTME and the doping P3HT, the proportion is 10%,20%,30%,40%,50%,60%,70%,80%,90%, the electrical performance of the test device is known, and when the doping proportion is 20%, the performance of the corresponding organic field effect transistor is optimal, The carrier mobility is 1.2 to 10-2 cm2 V-1s-1. and (3) using an ink-jet printer to print the silver electrode, the active layer and the dielectric layer on the phase-piece paper to prepare the organic field effect transistor of the side gate structure, and the preparation and printing of the printing preparation, the active layer and the dielectric layer ink of the silver electrode are preliminarily studied, The device with the field effect characteristic curve is prepared, the carrier mobility can reach the order of 10-3 (in cm2 V-1s-1), and the switching ratio can reach the order of 102.
【學(xué)位授予單位】：南京郵電大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN386

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相關(guān)期刊論文 前1條

1 董京;柴玉華;趙躍智;石巍巍;郭玉秀;儀明東;解令海;黃維;;柔性有機(jī)場效應(yīng)晶體管研究進(jìn)展[J];物理學(xué)報;2013年04期

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本文編號：2509502