長(zhǎng)波碲鎘汞紅外焦平面探測(cè)器暗電流機(jī)理分析
發(fā)布時(shí)間：2019-06-11 21:57
【摘要】：碲鎘汞材料由于其可調(diào)的禁帶寬度、電子遷移率高、較高的量子效率等優(yōu)點(diǎn)在紅外探測(cè)領(lǐng)域有非常重要的應(yīng)用價(jià)值。碲鎘汞的禁帶寬度隨著Cd組分變化可以從-0.3eV到1.6eV連續(xù)改變,在短波、中波和長(zhǎng)波紅外波段都有很好的響應(yīng)率。尤其在長(zhǎng)波紅外波段,碲鎘汞材料仍有很高的探測(cè)率,長(zhǎng)波探測(cè)也是第三代高性能性能碲鎘汞焦平面器件的主要目標(biāo)。但是長(zhǎng)波碲鎘汞紅外探測(cè)器由于材料有更窄的禁帶寬度,良好的器件對(duì)材料生長(zhǎng)、器件結(jié)構(gòu)設(shè)計(jì)、流片工藝等有著更高的要求。長(zhǎng)波碲鎘汞器件的暗電流是制約紅外探測(cè)器性能的主要原因,研究長(zhǎng)波碲鎘汞紅外探測(cè)器暗電流機(jī)理是獲取高性能長(zhǎng)波碲鎘汞紅外探測(cè)器重要手段�；趯�(shí)驗(yàn)測(cè)試數(shù)據(jù),結(jié)合精細(xì)化數(shù)值分析模型和解析分析模型,本文對(duì)長(zhǎng)波碲鎘汞紅外探測(cè)器暗電流成分分析和作用機(jī)理進(jìn)行了研究。獲取了不同結(jié)構(gòu)、不同摻雜類型等探測(cè)器的暗電流成分,提取了關(guān)鍵物理參數(shù),對(duì)長(zhǎng)波碲鎘汞的實(shí)驗(yàn)做出了指導(dǎo),并能使精細(xì)化數(shù)值分析模型預(yù)測(cè)探測(cè)器性能。具體研究?jī)?nèi)容如下:1、對(duì)截止波長(zhǎng)為9微米的P+-on-n雙層組分異質(zhì)結(jié)結(jié)構(gòu)碲鎘汞紅外探測(cè)器暗電流成分進(jìn)行了分析,通過解析模型研究?jī)山M不同n區(qū)摻雜濃度的器件發(fā)現(xiàn),80K時(shí)器件在較大反偏條件下是輔助隧穿電流占主導(dǎo),缺陷輔助隧穿電流遠(yuǎn)大于帶間直接隧穿電流,直到器件零偏附近器件的暗電流才由產(chǎn)生復(fù)合電流占主導(dǎo),器件在小正偏壓下是擴(kuò)散電流及串聯(lián)電阻對(duì)電流有影響;分析獲取不同溫度下的特征參數(shù)發(fā)現(xiàn),隨著溫度升高,器件的少子壽命越低,等效缺陷能級(jí)往價(jià)帶位置移動(dòng);對(duì)比兩種不同摻雜濃度的器件的特征參數(shù)發(fā)現(xiàn),吸收層較高濃度的摻雜會(huì)導(dǎo)致缺陷增加,工藝上要追求更低摻雜濃度的方法。2、對(duì)截止波長(zhǎng)為15微米的P+-on-n雙層組分異質(zhì)結(jié)結(jié)構(gòu)甚長(zhǎng)波碲鎘汞紅外探測(cè)器性能進(jìn)行了分析,研究發(fā)現(xiàn)甚長(zhǎng)波碲鎘汞紅外探測(cè)器對(duì)材料的缺陷、流片工藝等更加敏感。在大反偏時(shí)相同工藝的兩批次器件均為隧穿電流占主導(dǎo),小反偏時(shí)性能較好的器件是由產(chǎn)生復(fù)合電流占主導(dǎo),而性能較差的器件是隧穿電流占主導(dǎo),零偏附近時(shí)是與熱激發(fā)相關(guān)的擴(kuò)散電流和產(chǎn)生復(fù)合電流共同主導(dǎo);隨著溫度的升高,能帶逐漸變寬,帶間隧穿電流逐漸降低,少子壽命逐漸降低,導(dǎo)致與熱激發(fā)相關(guān)的電流逐漸增大,使器件暗電流增大;通過數(shù)值模型模擬得到Cd組分緩變層能帶,認(rèn)為Cd組分緩沖層厚度會(huì)是影響器件暗電流和探測(cè)率的重要因素;缺陷和位錯(cuò)的引入、Cd組分緩沖層造成的勢(shì)壘高度的不同是導(dǎo)致焦平面器件性能不均一的重要因素。3、對(duì)截止波長(zhǎng)為12.5微米的n-i-p結(jié)構(gòu)Au與汞空位共同摻雜p型外延的碲鎘汞紅外探測(cè)器的性能進(jìn)行了研究,首先建立了精細(xì)化數(shù)值分析模型,利用此模型對(duì)器件的暗電流分析此精細(xì)的數(shù)值分析模型在較大偏壓時(shí)更能真實(shí)的反映器件的暗電流特性,與實(shí)驗(yàn)測(cè)試數(shù)據(jù)更加吻合;通過此模型,提取了不同p型摻雜濃度四個(gè)樣品的暗電流成分,發(fā)現(xiàn)所有器件都是在大反偏下由帶間隧穿電流主導(dǎo),小反偏下是產(chǎn)生復(fù)合電流主導(dǎo);隨著摻雜濃度的增加,器件的SRH產(chǎn)生復(fù)合電流先增加后減小,器件的帶間隧穿電流逐漸增大,通過仿真獲取的少子壽命與其品質(zhì)因子有非常好的正相關(guān)性,通過結(jié)區(qū)電場(chǎng)理論較好的分析了帶間隧穿電流較大的原因;針對(duì)仿真獲取少子壽命先增大后減小的物理現(xiàn)象,分析Au與汞空位的相互作用,認(rèn)為少子壽命先增加是因?yàn)锳u占據(jù)汞空位的原因,少子壽命減少是因?yàn)锳u沒有將Hg空位完全占據(jù)從而帶來的缺陷的原因。
[Abstract]:Because of its tunable band gap, high electron mobility and high quantum efficiency, the mercury-bearing mercury material has very important application value in the field of infrared detection. The forbidden band width of the mercury is continuously changed from-0.3 eV to 1.6 eV with the change of Cd component, and there is a good response rate in the short-wave, medium-wave and long-wave infrared bands. In particular, in the long-wave infrared band, the high-performance mercury-containing material still has a high detection rate, and the long-wave detection is the main target of the third-generation high-performance and high-performance mercury-fired focal plane device. However, the long-wave mercury-sensitive infrared detector has higher requirements for material growth, device structure design, flow sheet process and so on due to the narrow band gap width of the material. The dark current of the long-wave mercury-sensitive mercury device is the main reason for restricting the performance of the infrared detector, and the dark current mechanism of the long-wave mercury-sensitive mercury infrared detector is an important means for obtaining the high-performance long-wave mercury-sensitive mercury infrared detector. Based on the experimental data, combined with the refined numerical model and the analytical model, this paper studies the dark current component analysis and the action mechanism of the long-wave mercury-mercury infrared detector. The dark current components of different structures, different doping types and the like are obtained, the key physical parameters are extracted, and the experimental results of the long-wave mercury-excited mercury are guided, and the fine numerical model can be used to predict the performance of the detector. The dark current component of a P +-on-n double-layer component heterostructure with a cut-off wavelength of 9 microns was analyzed, and the device discovery of different n-zone doping concentration was studied by means of the analytical model. when the device is 80K, the device is dominated by the auxiliary tunneling current under the condition of larger anti-bias, and the defect-assisted tunneling current is far greater than the direct tunneling current between the devices until the dark current of the device near the zero-bias of the device is dominated by the generation of the composite current, Under the bias of small positive bias, the diffusion current and the series resistance have an effect on the current; the characteristic parameters at different temperatures are analyzed to find that the lower sub-life of the device is lower, and the equivalent defect energy level moves to the valence band position as the temperature is increased; Comparing the characteristic parameters of the two devices with different doping concentration, the doping of the higher concentration of the absorption layer can lead to an increase of the defect, and the process of the process is to pursue the method of lower doping concentration. The performance of a P +-on-n double-layer component heterostructure with a cut-off wavelength of 15 microns was analyzed. the two-batch device of the same process is dominated by the tunneling current, and the device with good performance is dominated by the generation of the composite current, and the device with poor performance is dominated by the tunneling current, when the temperature increases, the energy band is gradually widened, the tunneling current is gradually reduced, and the sub-service life is gradually reduced, so that the current related to the thermal excitation is gradually increased, and the dark current of the device is increased; It is considered that the thickness of the buffer layer of the Cd component can be an important factor which can affect the dark current and the detection rate of the device. the difference of the barrier height caused by the cd component buffer layer is an important factor that leads to a non-uniform performance of the focal plane device.3, the performance of an n-i-p structure au with a cut-off wavelength of 12.5 microns and a mercury vacancy co-doped p-type epitaxial mercury-mercury infrared detector are studied, Firstly, a refined numerical analysis model is established, and the dark current of the device is analyzed by using the model, the dark current characteristic of the device can be more real reflected in the larger bias voltage, and the dark current characteristic of the device is more consistent with the experimental test data; and through the model, the dark current component of the four samples with different p-type doping concentration is extracted, The inter-band tunneling current of the device is gradually increased, the small sub-life obtained by the simulation has a very good positive correlation with the quality factor, the reason that the tunneling current is large is analyzed by the field theory of the junction region, and the physical phenomenon which is reduced after the small sub-life is first increased is obtained for the simulation, The interaction between Au and mercury vacancies is analyzed, and it is believed that the less sub-life is due to the fact that Au occupies the mercury vacancy, and the less sub-life is due to the fact that Au does not completely occupy the Hg vacancy.
【學(xué)位授予單位】：中國(guó)科學(xué)院大學(xué)(中國(guó)科學(xué)院上海技術(shù)物理研究所)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN215
本文編號(hào)：2497482
[Abstract]:Because of its tunable band gap, high electron mobility and high quantum efficiency, the mercury-bearing mercury material has very important application value in the field of infrared detection. The forbidden band width of the mercury is continuously changed from-0.3 eV to 1.6 eV with the change of Cd component, and there is a good response rate in the short-wave, medium-wave and long-wave infrared bands. In particular, in the long-wave infrared band, the high-performance mercury-containing material still has a high detection rate, and the long-wave detection is the main target of the third-generation high-performance and high-performance mercury-fired focal plane device. However, the long-wave mercury-sensitive infrared detector has higher requirements for material growth, device structure design, flow sheet process and so on due to the narrow band gap width of the material. The dark current of the long-wave mercury-sensitive mercury device is the main reason for restricting the performance of the infrared detector, and the dark current mechanism of the long-wave mercury-sensitive mercury infrared detector is an important means for obtaining the high-performance long-wave mercury-sensitive mercury infrared detector. Based on the experimental data, combined with the refined numerical model and the analytical model, this paper studies the dark current component analysis and the action mechanism of the long-wave mercury-mercury infrared detector. The dark current components of different structures, different doping types and the like are obtained, the key physical parameters are extracted, and the experimental results of the long-wave mercury-excited mercury are guided, and the fine numerical model can be used to predict the performance of the detector. The dark current component of a P +-on-n double-layer component heterostructure with a cut-off wavelength of 9 microns was analyzed, and the device discovery of different n-zone doping concentration was studied by means of the analytical model. when the device is 80K, the device is dominated by the auxiliary tunneling current under the condition of larger anti-bias, and the defect-assisted tunneling current is far greater than the direct tunneling current between the devices until the dark current of the device near the zero-bias of the device is dominated by the generation of the composite current, Under the bias of small positive bias, the diffusion current and the series resistance have an effect on the current; the characteristic parameters at different temperatures are analyzed to find that the lower sub-life of the device is lower, and the equivalent defect energy level moves to the valence band position as the temperature is increased; Comparing the characteristic parameters of the two devices with different doping concentration, the doping of the higher concentration of the absorption layer can lead to an increase of the defect, and the process of the process is to pursue the method of lower doping concentration. The performance of a P +-on-n double-layer component heterostructure with a cut-off wavelength of 15 microns was analyzed. the two-batch device of the same process is dominated by the tunneling current, and the device with good performance is dominated by the generation of the composite current, and the device with poor performance is dominated by the tunneling current, when the temperature increases, the energy band is gradually widened, the tunneling current is gradually reduced, and the sub-service life is gradually reduced, so that the current related to the thermal excitation is gradually increased, and the dark current of the device is increased; It is considered that the thickness of the buffer layer of the Cd component can be an important factor which can affect the dark current and the detection rate of the device. the difference of the barrier height caused by the cd component buffer layer is an important factor that leads to a non-uniform performance of the focal plane device.3, the performance of an n-i-p structure au with a cut-off wavelength of 12.5 microns and a mercury vacancy co-doped p-type epitaxial mercury-mercury infrared detector are studied, Firstly, a refined numerical analysis model is established, and the dark current of the device is analyzed by using the model, the dark current characteristic of the device can be more real reflected in the larger bias voltage, and the dark current characteristic of the device is more consistent with the experimental test data; and through the model, the dark current component of the four samples with different p-type doping concentration is extracted, The inter-band tunneling current of the device is gradually increased, the small sub-life obtained by the simulation has a very good positive correlation with the quality factor, the reason that the tunneling current is large is analyzed by the field theory of the junction region, and the physical phenomenon which is reduced after the small sub-life is first increased is obtained for the simulation, The interaction between Au and mercury vacancies is analyzed, and it is believed that the less sub-life is due to the fact that Au occupies the mercury vacancy, and the less sub-life is due to the fact that Au does not completely occupy the Hg vacancy.
【學(xué)位授予單位】：中國(guó)科學(xué)院大學(xué)(中國(guó)科學(xué)院上海技術(shù)物理研究所)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN215
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