220GHz太赫茲倍頻鏈路研究
發(fā)布時間：2019-06-06 08:23
【摘要】：太赫茲技術(shù)在信息科學(xué)、空間科學(xué)、醫(yī)學(xué)以及材料科學(xué)等學(xué)科上都有極高的開發(fā)空間和應(yīng)用前景。尤其是長波波段(100GHz-300GHz),在雷達、通信和安檢等系統(tǒng)中都體現(xiàn)出了極高的實用價值。目前太赫茲應(yīng)用系統(tǒng)的發(fā)展主要受限于太赫茲波的產(chǎn)生,其中基于半導(dǎo)體器件由低頻微波向太赫茲頻段發(fā)展的倍頻源具備高穩(wěn)定性、高集成度、低成本等優(yōu)勢而備受關(guān)注。220GHz為大氣傳輸窗口,國內(nèi)已有多家研究機構(gòu)進行該頻段處的通信或雷達系統(tǒng)驗證研究,其中固態(tài)倍頻源是收發(fā)系統(tǒng)中最重要的部分之一。本文基于肖特基二極管研究倍頻鏈路,該系統(tǒng)可為220GHz收發(fā)系統(tǒng)提供射頻源,也可以為440GHz收發(fā)系統(tǒng)提供本振源�；贕aAs肖特基二極管研制出了220GHz二倍頻器,首先建立二極管芯片三維電磁模型并提取其特性參數(shù),然后分步研究二倍頻器各無源模塊,利用諧波平衡法對倍頻器整體電路進行優(yōu)化,最終對該二倍頻器進行實驗研究。仿真結(jié)果表明,當(dāng)驅(qū)動功率為150mW時,二倍頻器工作狀態(tài)達到最佳,在210GHz-230GHz頻帶內(nèi)倍頻效率都大于15%,在211GHz處達到最大為41%;測試結(jié)果表明,當(dāng)驅(qū)動功率為30mW的寬帶穩(wěn)幅源時,倍頻效率在197-230GHz內(nèi)都大于10%,在218GHz處輸出功率最高,為7.13mW,對應(yīng)效率為24%,與同等情況下的仿真結(jié)果吻合;若具備更大功率驅(qū)動源,該二倍頻器工作性能會進一步提升�；贕aN肖特基二極管研制出了110GHz三倍頻器,分析GaN材料的特點以及GaN二極管的可行性,并參考GaAs二極管研究GaN基平面肖特基二極管芯片,利用場路結(jié)合的辦法建立二極管三維電磁模型,最終對110GHz三倍頻器進行試驗研究。仿真結(jié)果表明,當(dāng)驅(qū)動功率為1.5W時,倍頻器工作狀態(tài)最佳,倍頻效率為7%;測試結(jié)果表明,當(dāng)驅(qū)動功率為200mW時,最大輸出功率為2.7mW,倍頻器效率會隨著驅(qū)動功率增加而進一步提升。本文研制的220GHz二倍頻器工作性能在國內(nèi)同頻段內(nèi)處于領(lǐng)先地位,聯(lián)合研制的GaN基平面肖特基二極管對在國內(nèi)也屬于開創(chuàng)性工作,為高功率太赫茲倍頻器設(shè)計積累了一定經(jīng)驗。
[Abstract]:Terahertz technology has a high development space and application prospect in information science, space science, medicine and material science. Especially in long wave section (100GHz-300GHz), it is of great practical value in radar, communication and security inspection systems. At present, the development of terahertz application system is mainly limited by the generation of terahertz wave. The frequency doubling source based on the development of semiconductor devices from low frequency microwave to terahertz frequency band has high stability and high integration. 220 GHz is an atmospheric transmission window. A number of domestic research institutions have carried out communication or radar system verification research in this frequency band, among which solid-state frequency doubling source is one of the most important parts of the transceiver system. In this paper, the frequency doubling link is studied based on Schottky diode. The system can provide radio frequency source for 220GHz transceiver system and local oscillator source for 440GHz transceiver system. Based on GaAs Schottky diode, a 220GHz frequency multiplier is developed. firstly, the three-dimensional electromagnetic model of the diode chip is established and its characteristic parameters are extracted, and then the passive modules of the frequency multiplier are studied step by step. The harmonic balance method is used to optimize the whole circuit of the frequency multiplier, and finally, the experimental study of the frequency multiplier is carried out. The simulation results show that when the driving power is 150mW, the working state of the frequency multiplier is the best, the frequency doubling efficiency is more than 15% in the 210GHz-230GHz band, and the maximum is 41% at the 211GHz. The test results show that when the driving power is the broadband amplitude stable source of 30mW, the frequency doubling efficiency is more than 10% in 197-230GHz, the highest output power is 7.13 MW at 218GHz, and the corresponding efficiency is 24%, which is in good agreement with the simulation results under the same condition. If there is a larger power drive source, the performance of the frequency multiplier will be further improved. Based on GaN Schottky diode, 110GHz triple frequency multiplier is developed. the characteristics of GaN material and the feasibility of GaN diode are analyzed, and the GaN base plane Schottky diode chip is studied with reference to GaAs diode. The three-dimensional electromagnetic model of diode is established by using the method of field-circuit combination, and finally the experimental study of 110GHz triple frequency multiplier is carried out. The simulation results show that when the driving power is 1.5 W, the frequency multiplier has the best working state and the frequency doubling efficiency is 7%. The test results show that when the driving power is 200mW, the maximum output power is 2.7 MW, and the frequency multiplier efficiency will be further improved with the increase of driving power. The performance of 220GHz frequency multiplier developed in this paper is in the leading position in the same frequency band in China. The GaN base plane Schottky diode pair also belongs to groundbreaking work in China, which accumulates some experience for the design of high power terahertz frequency multiplier.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN771
本文編號：2494219
[Abstract]:Terahertz technology has a high development space and application prospect in information science, space science, medicine and material science. Especially in long wave section (100GHz-300GHz), it is of great practical value in radar, communication and security inspection systems. At present, the development of terahertz application system is mainly limited by the generation of terahertz wave. The frequency doubling source based on the development of semiconductor devices from low frequency microwave to terahertz frequency band has high stability and high integration. 220 GHz is an atmospheric transmission window. A number of domestic research institutions have carried out communication or radar system verification research in this frequency band, among which solid-state frequency doubling source is one of the most important parts of the transceiver system. In this paper, the frequency doubling link is studied based on Schottky diode. The system can provide radio frequency source for 220GHz transceiver system and local oscillator source for 440GHz transceiver system. Based on GaAs Schottky diode, a 220GHz frequency multiplier is developed. firstly, the three-dimensional electromagnetic model of the diode chip is established and its characteristic parameters are extracted, and then the passive modules of the frequency multiplier are studied step by step. The harmonic balance method is used to optimize the whole circuit of the frequency multiplier, and finally, the experimental study of the frequency multiplier is carried out. The simulation results show that when the driving power is 150mW, the working state of the frequency multiplier is the best, the frequency doubling efficiency is more than 15% in the 210GHz-230GHz band, and the maximum is 41% at the 211GHz. The test results show that when the driving power is the broadband amplitude stable source of 30mW, the frequency doubling efficiency is more than 10% in 197-230GHz, the highest output power is 7.13 MW at 218GHz, and the corresponding efficiency is 24%, which is in good agreement with the simulation results under the same condition. If there is a larger power drive source, the performance of the frequency multiplier will be further improved. Based on GaN Schottky diode, 110GHz triple frequency multiplier is developed. the characteristics of GaN material and the feasibility of GaN diode are analyzed, and the GaN base plane Schottky diode chip is studied with reference to GaAs diode. The three-dimensional electromagnetic model of diode is established by using the method of field-circuit combination, and finally the experimental study of 110GHz triple frequency multiplier is carried out. The simulation results show that when the driving power is 1.5 W, the frequency multiplier has the best working state and the frequency doubling efficiency is 7%. The test results show that when the driving power is 200mW, the maximum output power is 2.7 MW, and the frequency multiplier efficiency will be further improved with the increase of driving power. The performance of 220GHz frequency multiplier developed in this paper is in the leading position in the same frequency band in China. The GaN base plane Schottky diode pair also belongs to groundbreaking work in China, which accumulates some experience for the design of high power terahertz frequency multiplier.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN771
【參考文獻】
相關(guān)期刊論文 前7條
1 YAO Changfei;ZHOU Ming;LUO Yunsheng;;A High Power 320 356GHz Frequency Multipliers with Schottky Diodes[J];Chinese Journal of Electronics;2016年05期
2 繆麗;黃維;蔣均;郭桂美;;基于肖特基變?nèi)荻䴓O管的0.17THz二倍頻器研制[J];紅外與激光工程;2015年03期
3 姚常飛;周明;羅運生;寇亞男;;基于倒扣技術(shù)的190～225GHz肖特基二極管高效率二倍頻器（英文）[J];紅外與毫米波學(xué)報;2015年01期
4 姚常飛;周明;羅運生;王毅剛;許從海;;基于肖特基平面二極管的150GHz和180GHz固定調(diào)節(jié)式倍頻源(英文)[J];紅外與毫米波學(xué)報;2013年02期
5 谷智;陳沅;李煥勇;介萬奇;;太赫茲輻射源的研究進展[J];紅外技術(shù);2011年05期
6 劉盛綱;;太赫茲科學(xué)技術(shù)的新發(fā)展[J];中國基礎(chǔ)科學(xué);2006年01期
7 王平;;GaN材料的特性與應(yīng)用[J];電子元器件應(yīng)用;2001年10期
相關(guān)博士學(xué)位論文 前1條
1 鐘富群;固態(tài)太赫茲前端關(guān)鍵技術(shù)研究[D];電子科技大學(xué);2012年
相關(guān)碩士學(xué)位論文 前1條
1 韓yN煒;GaAs單片集成650GHz三倍頻器研究[D];電子科技大學(xué);2015年
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