片上傳輸線模型與GaN HEMT小信號模型研究
發(fā)布時間：2019-04-19 06:54
【摘要】：作為電子產(chǎn)業(yè)的核心,集成電路產(chǎn)業(yè)的發(fā)展對于科技的進步與經(jīng)濟的發(fā)展都有很大促進作用。目前,集成電路產(chǎn)業(yè)迎來良好的發(fā)展前景。使用電路仿真軟件輔助設(shè)計是設(shè)計電路的基本方法。仿真的準確性依賴于所使用模型的準確性。因此建立準確的器件模型具有重要的意義。 本文第一部分研究內(nèi)容為片上傳輸線等效電路模型的建立及模型中參數(shù)的提取方法。其中,慢波傳輸線作為高性能的傳輸線,由于具有更短的波長,能有效降低芯片面積而受到廣泛的關(guān)注。然而對這類高性能傳輸線的研究集中在不同尺寸結(jié)構(gòu)的電磁特性,對慢波傳輸線建立等效電路模型的研究工作卻不多。本文首先使用電磁仿真工具ADS研究慢波傳輸線的性能,確定慢波傳輸線的結(jié)構(gòu)尺寸。然后為慢波傳輸線建立等效電路模型。對于常見的每一小節(jié)的等效電路結(jié)構(gòu)pi結(jié)構(gòu)與T結(jié)構(gòu)進行改進,將模型修改為對稱的形式,能有效的在不增加模型復(fù)雜度的情況下準確擬合S參數(shù) GaN HEMT是一種適合于高頻率,高功率應(yīng)用的功率器件。相對其他半導(dǎo)體材料,具有寬的禁帶寬度,高電子遷移率,更大的電流密度,由于其優(yōu)異的器件性能得到廣泛的關(guān)注。對不斷出現(xiàn)的新器件的不同的特性,傳統(tǒng)的模型不一定適用。因此研究對它建立合適的模型具有重要的意義。 本文第二部分內(nèi)容為對GaN HEMT的測試數(shù)據(jù)建立模型。使用經(jīng)驗公式,并做相應(yīng)的改動,提取模型參數(shù),準確的擬合了測量到的直流特性,并使用非傳統(tǒng)的曲線擬合方法,人工神經(jīng)網(wǎng)絡(luò)快速的擬合了直流特性。通過外部寄生提取,與偏置無關(guān)的外部電容,電感,電阻的提取,內(nèi)部等效電路模型提取,建立小信號等效電路模型,為大信號模型建立提供了基礎(chǔ)。 綜上所述,本文建立了慢波傳輸線的寬頻帶等效電路模型,能有效的指導(dǎo)設(shè)計。建立的GaN HEMT直流模型與小信號等效電路模型為被測晶體管應(yīng)用在電路仿真提供了基礎(chǔ)。
[Abstract]:As the core of electronic industry, the development of integrated circuit industry promotes the progress of science and technology and the development of economy. At present, the integrated circuit industry ushered in a good development prospect. The basic method of circuit design is to use circuit simulation software to design circuit. The accuracy of simulation depends on the accuracy of the model used. Therefore, the establishment of accurate device model is of great significance. The first part of this paper is about the establishment of the equivalent circuit model of on-chip transmission line and the method of extracting the parameters from the model. Among them, as a high-performance transmission line, slow-wave transmission line is widely concerned because it has shorter wavelength and can effectively reduce the chip area. However, the research on this kind of high-performance transmission lines focuses on the electromagnetic characteristics of different size structures, but the research work on establishing equivalent circuit models of slow-wave transmission lines is few. In this paper, the electromagnetic simulation tool ADS is used to study the performance of the slow-wave transmission line, and the structure size of the slow-wave transmission line is determined. Then the equivalent circuit model is established for the slow wave transmission line. The equivalent circuit structure pi and T structure of each section are improved, and the model is modified to symmetrical form. Accurate fitting of S-parameter GaN HEMT without increasing the complexity of the model is a power device suitable for high-frequency and high-power applications. Compared with other semiconductor materials, it has wide band gap, high electron mobility and larger current density. It has attracted much attention because of its excellent device performance. Traditional models are not necessarily applicable to the different characteristics of emerging new devices. Therefore, it is of great significance to establish a suitable model for it. The second part of this paper is to model the test data of GaN HEMT. Using empirical formula and corresponding changes, the model parameters are extracted, the measured DC characteristics are accurately fitted, and non-traditional curve fitting methods are used to quickly fit the DC characteristics by artificial neural network (Ann). The extraction of external parasitic, the extraction of external capacitance, inductance and resistance independent of bias, the extraction of internal equivalent circuit model and the establishment of small signal equivalent circuit model provide a basis for the establishment of large signal model. In conclusion, the broadband equivalent circuit model of slow-wave transmission line is established in this paper, which can guide the design of slow-wave transmission line effectively. The GaN HEMT DC model and the small signal equivalent circuit model provide the basis for the application of the measured transistor in the circuit simulation.
【學(xué)位授予單位】：中國科學(xué)技術(shù)大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN386
本文編號：2460702
[Abstract]:As the core of electronic industry, the development of integrated circuit industry promotes the progress of science and technology and the development of economy. At present, the integrated circuit industry ushered in a good development prospect. The basic method of circuit design is to use circuit simulation software to design circuit. The accuracy of simulation depends on the accuracy of the model used. Therefore, the establishment of accurate device model is of great significance. The first part of this paper is about the establishment of the equivalent circuit model of on-chip transmission line and the method of extracting the parameters from the model. Among them, as a high-performance transmission line, slow-wave transmission line is widely concerned because it has shorter wavelength and can effectively reduce the chip area. However, the research on this kind of high-performance transmission lines focuses on the electromagnetic characteristics of different size structures, but the research work on establishing equivalent circuit models of slow-wave transmission lines is few. In this paper, the electromagnetic simulation tool ADS is used to study the performance of the slow-wave transmission line, and the structure size of the slow-wave transmission line is determined. Then the equivalent circuit model is established for the slow wave transmission line. The equivalent circuit structure pi and T structure of each section are improved, and the model is modified to symmetrical form. Accurate fitting of S-parameter GaN HEMT without increasing the complexity of the model is a power device suitable for high-frequency and high-power applications. Compared with other semiconductor materials, it has wide band gap, high electron mobility and larger current density. It has attracted much attention because of its excellent device performance. Traditional models are not necessarily applicable to the different characteristics of emerging new devices. Therefore, it is of great significance to establish a suitable model for it. The second part of this paper is to model the test data of GaN HEMT. Using empirical formula and corresponding changes, the model parameters are extracted, the measured DC characteristics are accurately fitted, and non-traditional curve fitting methods are used to quickly fit the DC characteristics by artificial neural network (Ann). The extraction of external parasitic, the extraction of external capacitance, inductance and resistance independent of bias, the extraction of internal equivalent circuit model and the establishment of small signal equivalent circuit model provide a basis for the establishment of large signal model. In conclusion, the broadband equivalent circuit model of slow-wave transmission line is established in this paper, which can guide the design of slow-wave transmission line effectively. The GaN HEMT DC model and the small signal equivalent circuit model provide the basis for the application of the measured transistor in the circuit simulation.
【學(xué)位授予單位】：中國科學(xué)技術(shù)大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN386
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相關(guān)期刊論文 前3條
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