【摘要】：針對大功率器件散熱瓶頸問題,基于GaN功率芯片,利用有限元分析方法開展了芯片近結(jié)區(qū)熱特性模擬方法的研究。建立了芯片近結(jié)區(qū)散熱能力仿真評估的三維理論模型,系統(tǒng)地研究了不同的初始條件、邊界條件、晶格熱效應(yīng)及結(jié)構(gòu)理論假設(shè)等因素對仿真精度的影響,分析了理論建模因素對計算結(jié)果的影響的原因。同時采用紅外熱成像儀對不同功率下的GaN芯片結(jié)溫進行測試驗證,模擬計算的結(jié)果和測試值的偏差在10%之內(nèi),表明合理建模的熱仿真技術(shù)可有效評估器件散熱能力。
[Abstract]:In order to solve the problem of heat dissipation bottleneck of high power devices, a finite element analysis (FEM) method was used to simulate the thermal characteristics of the near junction region based on the GaN power chip. A three-dimensional theoretical model for the simulation and evaluation of the heat dissipation capacity in the near junction region of the chip is established, and the effects of different initial conditions, boundary conditions, lattice thermal effects and structural theoretical assumptions on the simulation accuracy are systematically studied. The causes of the influence of theoretical modeling factors on the calculation results are analyzed. At the same time, infrared thermal imager is used to test and verify the junction temperature of GaN chip under different power. The deviation between the simulation result and the test value is less than 10%, which shows that the reasonable modeling thermal simulation technology can effectively evaluate the thermal dissipation ability of the device.
【作者單位】： 微波毫米波單片集成和模塊電路重點實驗室南京電子器件研究所;固體微結(jié)構(gòu)物理國家實驗室南京大學(xué);
【基金】：國家自然科學(xué)基金資助項目(61474101,61504125) 微波毫米波單片集成和模塊電路重點實驗室基金項目(6142803030203)
【分類號】：TN303
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本文編號：2456014