黑硅PIN四象限探測器研究
發(fā)布時間：2019-04-08 09:24
【摘要】：本文針對黑硅PIN四象限探測器的研制,對器件結(jié)構(gòu)進(jìn)行了優(yōu)化設(shè)計。采用飛秒激光燒蝕和MEMS工藝制備兩類黑硅材料,研究其表面形貌和光譜吸收特性,進(jìn)而計算得到等效折射率和消光系數(shù),進(jìn)而對Si-PIN四象限探測器進(jìn)行了仿真研究,分析和比較了兩種探測器的伏安特性、暗電流、光譜響應(yīng)、串?dāng)_以及響應(yīng)時間等性能參數(shù)。最后,基于標(biāo)準(zhǔn)Si-PIN四象限探測器器件的制作流程,進(jìn)行了黑硅Si-PIN四象限探測器原理性器件試制。取得的主要研究結(jié)論如下:(1)四象限探測器的串?dāng)_主要受載流子的擴(kuò)散長度、載流子壽命、硅材料的吸收系數(shù)、隔離槽寬度、光敏面邊長以及載流子的漂移速度等因素的影響;隔離槽寬度和光敏面邊長對象限串?dāng)_的大小起決定性作用,象限串?dāng)_隨著隔離槽寬度和光敏面邊長的增加而呈指數(shù)減小。(2)飛秒激光制備的黑硅材料在不同激光功率、激光掃描速度以及氣體氛圍參數(shù)下,其性質(zhì)也不盡相同。當(dāng)激光功率為0.2 w而掃描速度為1 mm/s時,制備得到的黑硅材料尖錐結(jié)構(gòu)完整、密度較大、分布較為均勻,同時光譜吸收較高可達(dá)到95%以上。在空氣和氮?dú)庵兄苽涞暮诠璨牧辖Y(jié)構(gòu)不夠完整、密度較小;而在SF6氣體中制備的黑硅材料形貌和分布等優(yōu)于在空氣和氮?dú)庵兄苽涞暮诠璨牧?其近紅外光譜吸收也明顯得到改善。(3)MEMS微結(jié)構(gòu)黑硅材料的性能與其表面微結(jié)構(gòu)有很大關(guān)系,當(dāng)微結(jié)構(gòu)的尺寸達(dá)到納米量級時,微結(jié)構(gòu)層會形成一個共振腔,對1060 nm波長入射光有明顯的減反作用;而當(dāng)微結(jié)構(gòu)的尺寸達(dá)到微米量級時,其對1060 nm波長入射光的減反作用有所削弱;通過離子注入,MEMS微結(jié)構(gòu)黑硅材料的光譜吸收會得到不同程度的提高。(4)基于普通Si-PIN四象限探測器和黑硅Si-PIN四象限探測器的仿真研究表明,黑硅材料的引入能明顯提高硅基探測器的響應(yīng)波長范圍和光譜響應(yīng)度,在近紅外波段的作用更為明顯;但是,黑硅Si-PIN四象限探測器的暗電流有所增加,象限間串?dāng)_有所增加。(5)基于飛秒激光燒蝕和MEMS兩種方法制備的黑硅材料,進(jìn)行了黑硅Si-PIN四象限探測器原理性器件試制,到目前為止,已完成N面黑硅材料加工,正在進(jìn)行后續(xù)工藝加工。
[Abstract]:In this paper, the structure of black silicon PIN four-quadrant detector is optimized. Two kinds of black silicon materials were prepared by femtosecond laser ablation and MEMS process, and their surface morphology and spectral absorption characteristics were studied. Then the equivalent refractive index and extinction coefficient were calculated, and then the Si-PIN four-quadrant detector was simulated. The voltage-ampere characteristics, dark current, spectral response, crosstalk and response time of the two detectors are analyzed and compared. Finally, based on the fabrication process of the standard Si-PIN four-quadrant detector device, the black silicon Si-PIN four-quadrant detector principle device is developed. The main conclusions obtained are as follows: (1) the crosstalk of the four-quadrant detector is mainly affected by the carrier diffusion length, carrier lifetime, the absorption coefficient of silicon material, and the width of the isolation slot. The influence of the length of the photosensitive surface and the drift velocity of the carrier; The width of isolation slot and the size of object-limited crosstalk on photosensitive surface length play a decisive role, and the quadrant crosstalk decreases exponentially with the increase of isolation slot width and length of photosensitive surface. (2) the black silicon materials prepared by femtosecond laser have different laser power. The properties of laser scanning velocity and gas atmosphere parameters are also different. When the laser power is 0.2w and the scanning speed is 1 mm/s, the sharp cone structure of the black silicon material is complete, the density is large, the distribution is more uniform, and the spectral absorption is higher than 95%. The structure of black silicon prepared in air and nitrogen is not complete and the density is small. However, the morphology and distribution of black silicon materials prepared in SF6 gas are better than those prepared in air and nitrogen. The near infrared absorption is also improved obviously. (3) the properties of MEMS microstructural black silicon material are related to its surface microstructure. When the size of the microstructure reaches nanoscale, a resonant cavity will be formed in the microstructure layer. The reaction of 1060 nm wavelength incident light was reduced obviously. However, when the size of the microstructure reaches the micron level, its reaction to the incident light at the wavelength of 1060 nm is weakened. Through ion implantation, the spectral absorption of MEMS microstructure black silicon material can be improved to some extent. (4) the simulation study based on ordinary Si-PIN four-quadrant detector and black silicon Si-PIN four-quadrant detector shows that: The introduction of black silicon material can obviously improve the response wavelength range and spectral responsivity of silicon-based detectors, especially in the near infrared band. However, the dark current of the black silicon Si-PIN four-quadrant detector increases and the crosstalk between the quadrants increases. (5) Black silicon materials based on femtosecond laser ablation and MEMS are fabricated. The principle device of black silicon Si-PIN four-quadrant detector has been developed. Up to now, the processing of N-plane black silicon material has been completed, and the follow-up process is being carried out.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN36
本文編號：2454470
[Abstract]:In this paper, the structure of black silicon PIN four-quadrant detector is optimized. Two kinds of black silicon materials were prepared by femtosecond laser ablation and MEMS process, and their surface morphology and spectral absorption characteristics were studied. Then the equivalent refractive index and extinction coefficient were calculated, and then the Si-PIN four-quadrant detector was simulated. The voltage-ampere characteristics, dark current, spectral response, crosstalk and response time of the two detectors are analyzed and compared. Finally, based on the fabrication process of the standard Si-PIN four-quadrant detector device, the black silicon Si-PIN four-quadrant detector principle device is developed. The main conclusions obtained are as follows: (1) the crosstalk of the four-quadrant detector is mainly affected by the carrier diffusion length, carrier lifetime, the absorption coefficient of silicon material, and the width of the isolation slot. The influence of the length of the photosensitive surface and the drift velocity of the carrier; The width of isolation slot and the size of object-limited crosstalk on photosensitive surface length play a decisive role, and the quadrant crosstalk decreases exponentially with the increase of isolation slot width and length of photosensitive surface. (2) the black silicon materials prepared by femtosecond laser have different laser power. The properties of laser scanning velocity and gas atmosphere parameters are also different. When the laser power is 0.2w and the scanning speed is 1 mm/s, the sharp cone structure of the black silicon material is complete, the density is large, the distribution is more uniform, and the spectral absorption is higher than 95%. The structure of black silicon prepared in air and nitrogen is not complete and the density is small. However, the morphology and distribution of black silicon materials prepared in SF6 gas are better than those prepared in air and nitrogen. The near infrared absorption is also improved obviously. (3) the properties of MEMS microstructural black silicon material are related to its surface microstructure. When the size of the microstructure reaches nanoscale, a resonant cavity will be formed in the microstructure layer. The reaction of 1060 nm wavelength incident light was reduced obviously. However, when the size of the microstructure reaches the micron level, its reaction to the incident light at the wavelength of 1060 nm is weakened. Through ion implantation, the spectral absorption of MEMS microstructure black silicon material can be improved to some extent. (4) the simulation study based on ordinary Si-PIN four-quadrant detector and black silicon Si-PIN four-quadrant detector shows that: The introduction of black silicon material can obviously improve the response wavelength range and spectral responsivity of silicon-based detectors, especially in the near infrared band. However, the dark current of the black silicon Si-PIN four-quadrant detector increases and the crosstalk between the quadrants increases. (5) Black silicon materials based on femtosecond laser ablation and MEMS are fabricated. The principle device of black silicon Si-PIN four-quadrant detector has been developed. Up to now, the processing of N-plane black silicon material has been completed, and the follow-up process is being carried out.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN36
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