【摘要】：隨著電子技術(shù)的飛速發(fā)展,電子系統(tǒng)已廣泛的應(yīng)用在生產(chǎn)生活及航空航天的各個(gè)方面,其復(fù)雜度也不斷增加,電子系統(tǒng)的關(guān)鍵模塊或元件故障而引起的災(zāi)難性事故也是時(shí)有發(fā)生。因此,電子系統(tǒng)的健康程度評(píng)估也愈發(fā)的受到重視。目前,對(duì)于電子系統(tǒng)健康度尚無(wú)一種定量的評(píng)估方法,特別是對(duì)于多種參數(shù)監(jiān)測(cè)下的電子系統(tǒng)綜合健康度缺少有效的評(píng)估方法。針對(duì)該問(wèn)題,論文主要從三個(gè)方面開(kāi)展研究工作:1、針對(duì)加速退化實(shí)驗(yàn)耗時(shí)時(shí)間長(zhǎng)、成本高的問(wèn)題,論文提出了一種基于EDA仿真技術(shù)的射頻電路性能退化仿真方法,結(jié)合故障模式影響分析,給出了影響射頻電路健康狀態(tài)的多個(gè)參數(shù),利用仿真方法得到典型射頻電路一系列關(guān)鍵參數(shù)的性能退化數(shù)據(jù),最終確定使用S參數(shù)對(duì)射頻電路的健康度進(jìn)行評(píng)估。2、針對(duì)射頻電路穩(wěn)定性參數(shù)K變化微弱、難以有效監(jiān)測(cè)早期性能退化的問(wèn)題,論文采用一種HMM模型對(duì)射頻電路的退化趨勢(shì)進(jìn)行監(jiān)測(cè),通過(guò)KL距離將微弱的性能退化參數(shù)轉(zhuǎn)化為變化較為明顯的退化趨勢(shì),從而增強(qiáng)了系統(tǒng)的退化趨勢(shì)分析能力。3、提出了一種性能退化軌跡曲線相似度的射頻電路健康評(píng)估及預(yù)測(cè)方法,選擇一種符合度較高的模型對(duì)性能退化數(shù)據(jù)進(jìn)行擬合,并使用擬合得到的性能退化軌跡曲線對(duì)射頻電路的壽命進(jìn)行預(yù)測(cè)。通過(guò)對(duì)射頻電路的性能退化數(shù)據(jù)進(jìn)行分析,明確了該用何種模型對(duì)性能退化數(shù)據(jù)進(jìn)行擬合并給出了評(píng)價(jià)擬合模型的評(píng)價(jià)標(biāo)準(zhǔn)。同時(shí),給出了性能退化軌跡與原始數(shù)據(jù)的退化軌跡之間的相似度的計(jì)算公式,并將其應(yīng)用在了射頻電路的健康評(píng)估及預(yù)測(cè)當(dāng)中。經(jīng)過(guò)實(shí)例驗(yàn)證,該方法能夠?qū)ι漕l電路的健康狀態(tài)進(jìn)行較為準(zhǔn)確的評(píng)估,利用該方法對(duì)射頻電路進(jìn)行預(yù)測(cè)得到的壽命,比直接使用性能退化軌跡得到的壽命更貼近真實(shí)值。
[Abstract]:With the rapid development of electronic technology, electronic system has been widely used in various aspects of production, life and aerospace, and its complexity is also increasing. Catastrophic accidents caused by the failure of key modules or components of an electronic system also occur from time to time. Therefore, the assessment of the health of electronic systems is being paid more and more attention. At present, there is no quantitative evaluation method for the health degree of electronic system, especially for the comprehensive health degree of electronic system monitored by a variety of parameters. In order to solve this problem, this paper focuses on three aspects: 1. Aiming at the long time-consuming and high cost of accelerated degradation experiment, a simulation method of RF circuit performance degradation based on EDA simulation technology is proposed in this paper. Combined with fault mode impact analysis, several parameters affecting the health state of RF circuit are given. The performance degradation data of a series of key parameters of typical RF circuit are obtained by simulation method. Finally, S parameters are used to evaluate the health of RF circuits. 2. For the weak variation of stability parameters K of RF circuits, it is difficult to effectively monitor the early performance degradation. In this paper, a HMM model is used to monitor the degradation trend of RF circuits. Through the KL distance, the weak performance degradation parameters are transformed into the obvious degradation trend, thus enhancing the degradation trend analysis ability of the system. In this paper, a health assessment and prediction method for RF circuits with similarity of performance degradation trajectory curves is proposed, and a high coincidence model is selected to fit the performance degradation data. The life of RF circuit is predicted by the fitting performance degradation trajectory curve. By analyzing the performance degradation data of RF circuits, it is clear which model should be used to simulate and merge the performance degradation data, and the evaluation standard of the evaluation fitting model is given. At the same time, the formula to calculate the similarity between the performance degradation trajectory and the original data degradation trajectory is given and applied to the health evaluation and prediction of RF circuits. An example shows that this method can accurately evaluate the health status of RF circuits. The life of RF circuits predicted by this method is closer to the real value than that obtained from the direct use of performance degradation trajectory.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類(lèi)號(hào)】：TN710
，

本文編號(hào)：2450566