基于提高有機(jī)電致發(fā)光器件發(fā)光特性的研究
發(fā)布時(shí)間：2019-03-22 06:57
【摘要】：有機(jī)電致發(fā)光器件因具有寬的可視角,重量輕,低能耗等優(yōu)點(diǎn),被認(rèn)為是新一代照明和平板顯示技術(shù)的候選者。經(jīng)過近30年的研究,有機(jī)電致發(fā)光技術(shù)得到了飛速的發(fā)展,但是困擾有機(jī)電致發(fā)光技術(shù)的兩大問題--穩(wěn)定性和效率仍然很突出。為了突破效率問題,探索更加優(yōu)良的器件工藝,本論文工作主要包含以下三部分內(nèi)容:1.通過在有機(jī)發(fā)光二極管(OLED)的陽極與空穴傳輸層NPB(N,N'-二苯基-N,N'-(1-萘基)-1,1'-聯(lián)苯-4,4'-二胺)之間加入m-MTDATA(4,4',4''-Tris(N-3-methylpheny l-N-phenylamino)triphenylamine)作為緩沖層來研究緩沖層對(duì)器件性能的影響。制備了ITO/m-MTDATA(d nm)/NPB(40-d nm)/Alq3(70nm)/LiF(0.5nm)/Al(40nm)結(jié)構(gòu)的器件,研究不同m-MTDATA厚度對(duì)OLED發(fā)光亮度、電流密度、電流效率等性能的影響。實(shí)驗(yàn)發(fā)現(xiàn),當(dāng)緩沖層的厚度為15nm時(shí),器件的啟亮電壓從未加緩沖層的13V降到了最低的9V,最大發(fā)光亮度從未加緩沖層的5900cd/m2增加到16300cd/m2,是原來的2.76倍。最高的電流效率也由未加緩沖層的最高1.8cd/A變?yōu)樽罡叩?.5cd/A,是原來的1.94倍。作為對(duì)照,制備了結(jié)構(gòu)為ITO/MoO3(15nm)/NPB(25nm)/Alq3(70nm)/LiF(0.5nm)/Al(40nm)的器件。在器件的ITO與NPB之間插入了厚度為15nm的MoO3緩沖層。與同厚度的m-MTDATA器件相比:插入MoO3緩沖層器件的啟亮電壓降低為8V,最大亮度為13320(cd/m2),最大電流密度為6030.74(A/m2),最大的電流效率為3.06(cd/A)。2.制備了厚度為40nm,以不同比例混合的DMAC-DPS和m-MTDATA混合薄膜,測試了在不同混合比例下薄膜的光致發(fā)光光譜和量子效率。通過測試發(fā)現(xiàn)當(dāng)DMAC-DPS和m-MTDATA比例為2:1時(shí),混合薄膜的量子效率達(dá)到了最大值為32.8%,以該混合薄膜作為發(fā)光層,制備了結(jié)構(gòu)為ITO/m-MTDATA30(nm)/DMAC-DPS:m-MTDATA(40nm)/DMAC-DPS(30nm)/LiF(1nm)/Al(60nm)的電致發(fā)光器件。通過測試發(fā)現(xiàn):當(dāng)DMAC-DPS和m-MTDATA二者比例為2:1時(shí),制備的發(fā)光器件在最大發(fā)光亮度,最大電流密度和最大電流效率方面均達(dá)到最大值。在上述三種器件的制備方法中,我們確定了制備有機(jī)電致發(fā)光器件的最佳工藝,為后期的工作提供了實(shí)驗(yàn)基礎(chǔ)。3.開展了溫度對(duì)TAPC:BC zVBi體系混合薄膜光致發(fā)光光譜的影響的研究。研究了TAPC:BCZVBi混合薄膜的表面形貌。TAPC、BCZVBi、TAPC:BCZVBi吸收譜和不同溫度下的歸一化光致發(fā)光光譜和光致發(fā)光光譜。發(fā)現(xiàn)隨著溫度的降低,發(fā)光強(qiáng)度增強(qiáng),發(fā)光峰位紅移。對(duì)比了TAPC、BCZVBi以及TAPC:BCZVBi混合薄膜的吸收特性和PL譜,發(fā)現(xiàn)混合薄膜的吸收峰與TAPC的吸收峰幾乎在同一位置,原因是由于能量轉(zhuǎn)移抑制了BCZVBi的吸收;混合薄膜有兩個(gè)發(fā)光峰,一個(gè)與BCZVBi的主峰重合,我們認(rèn)為是由BCZVBi單獨(dú)貢獻(xiàn),另一個(gè)峰位則是由二者共同貢獻(xiàn)。
[Abstract]:Organic light-emitting devices (OLEDs) are considered as candidates for the new generation of lighting and flat panel display technology because of their wide viewing angle, light weight and low energy consumption. After nearly 30 years of research, organic electroluminescence technology has been developed rapidly, but the stability and efficiency of the two major problems-stability and efficiency-are still outstanding. In order to break through the efficiency problem and explore better device technology, the work of this paper mainly includes the following three parts: 1. NPB (N, N-diphenyl-N, N-(1-naphthyl)-1, 1-biphenyl-4,4-diamine) was added between anode and hole transport layer NPB (N, N-diphenyl-N, N-(1-naphthyl)-1, 1-diphenyl-4,4-diamine) of organic light emitting diode (OLED). 4''-Tris (N-3-methylpheny l-N-phenylamino) triphenylamine) is used as buffer layer to study the effect of buffer layer on device performance. ITO/m-MTDATA (d nm) / NPB (40 nm) / Alq3 (70nm) / LiF (0.5nm) / Al (40nm) devices were fabricated. The effects of m-MTDATA thickness on the luminance, current density and current efficiency of OLED were investigated. It is found that when the thickness of the buffer layer is 15nm, the on-off voltage of the device decreases to the lowest 9V, and the maximum luminance of the device without adding the buffer layer increases to 16300cdm2, which is 2.76 times as much as that of the original one. The on-off voltage of the device has been reduced to the lowest 9V when the buffer layer is not added to the buffer layer. The highest current efficiency is also changed from the highest 1.8cd/A without buffer layer to the highest 3.5 CD / A, which is 1.94 times as high as the original. As a contrast, ITO/MoO3 (15nm) / NPB (25nm) / Alq3 (70nm) / LiF (0.5nm) / Al (40nm) devices were fabricated. A MoO3 buffer layer with the thickness of 15nm is inserted between the ITO and the NPB of the device. Compared with m-MTDATA devices of the same thickness, the on-off voltage of the MoO3 buffer layer device is reduced to 8V, the maximum brightness is 13320 (cd/m2), and the maximum current density is 6030.74 (A/m2). The maximum current efficiency is 3.06 (cd/A) .2. The photoluminescence (PL) spectra and quantum efficiency of DMAC-DPS and m-MTDATA thin films with different mixing ratios were measured under different mixing ratios and the thickness of the films was 40 nm, and the photoluminescence spectra and quantum efficiency of the films were measured. It is found that when the ratio of DMAC-DPS to m-MTDATA is 2: 1, the quantum efficiency of the hybrid film reaches the maximum value of 32.8%, and the hybrid film is used as the luminous layer. Electroluminescent devices with the structure of ITO/m-MTDATA30 (nm) / DMAC-DPS:m-MTDATA (40nm) / DMAC-DPS (30nm) / LiF (1nm) / Al (60nm) were fabricated. It is found that when the ratio of DMAC-DPS to m-MTDATA is 2: 1, the maximum luminance, the maximum current density and the maximum current efficiency of the device reach the maximum value in the aspect of the maximum luminance, the maximum current density and the maximum current efficiency. Among the preparation methods of the above three devices, we have determined the best process of preparing organic electroluminescent devices, which provides the experimental basis for later work. 3. The effect of temperature on photoluminescence spectra of mixed TAPC:BC zVBi films was studied. The surface morphology, TAPC, BCZVBi,TAPC:BCZVBi absorption spectra, normalized photoluminescence spectra and photoluminescence spectra of TAPC:BCZVBi mixed films at different temperatures were studied. It is found that with the decrease of temperature, the intensity of luminescence increases and the position of luminescence peak shifts red. The absorption characteristics and PL spectra of TAPC,BCZVBi and TAPC:BCZVBi mixed films were compared. It was found that the absorption peaks of the mixed films were almost the same as those of TAPC films, because the energy transfer inhibited the absorption of BCZVBi. The mixed films have two emission peaks, one coincident with the main peak of BCZVBi, which we think is contributed by BCZVBi alone and the other peak position by both.
【學(xué)位授予單位】：聊城大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN383.1
本文編號(hào)：2445368
[Abstract]:Organic light-emitting devices (OLEDs) are considered as candidates for the new generation of lighting and flat panel display technology because of their wide viewing angle, light weight and low energy consumption. After nearly 30 years of research, organic electroluminescence technology has been developed rapidly, but the stability and efficiency of the two major problems-stability and efficiency-are still outstanding. In order to break through the efficiency problem and explore better device technology, the work of this paper mainly includes the following three parts: 1. NPB (N, N-diphenyl-N, N-(1-naphthyl)-1, 1-biphenyl-4,4-diamine) was added between anode and hole transport layer NPB (N, N-diphenyl-N, N-(1-naphthyl)-1, 1-diphenyl-4,4-diamine) of organic light emitting diode (OLED). 4''-Tris (N-3-methylpheny l-N-phenylamino) triphenylamine) is used as buffer layer to study the effect of buffer layer on device performance. ITO/m-MTDATA (d nm) / NPB (40 nm) / Alq3 (70nm) / LiF (0.5nm) / Al (40nm) devices were fabricated. The effects of m-MTDATA thickness on the luminance, current density and current efficiency of OLED were investigated. It is found that when the thickness of the buffer layer is 15nm, the on-off voltage of the device decreases to the lowest 9V, and the maximum luminance of the device without adding the buffer layer increases to 16300cdm2, which is 2.76 times as much as that of the original one. The on-off voltage of the device has been reduced to the lowest 9V when the buffer layer is not added to the buffer layer. The highest current efficiency is also changed from the highest 1.8cd/A without buffer layer to the highest 3.5 CD / A, which is 1.94 times as high as the original. As a contrast, ITO/MoO3 (15nm) / NPB (25nm) / Alq3 (70nm) / LiF (0.5nm) / Al (40nm) devices were fabricated. A MoO3 buffer layer with the thickness of 15nm is inserted between the ITO and the NPB of the device. Compared with m-MTDATA devices of the same thickness, the on-off voltage of the MoO3 buffer layer device is reduced to 8V, the maximum brightness is 13320 (cd/m2), and the maximum current density is 6030.74 (A/m2). The maximum current efficiency is 3.06 (cd/A) .2. The photoluminescence (PL) spectra and quantum efficiency of DMAC-DPS and m-MTDATA thin films with different mixing ratios were measured under different mixing ratios and the thickness of the films was 40 nm, and the photoluminescence spectra and quantum efficiency of the films were measured. It is found that when the ratio of DMAC-DPS to m-MTDATA is 2: 1, the quantum efficiency of the hybrid film reaches the maximum value of 32.8%, and the hybrid film is used as the luminous layer. Electroluminescent devices with the structure of ITO/m-MTDATA30 (nm) / DMAC-DPS:m-MTDATA (40nm) / DMAC-DPS (30nm) / LiF (1nm) / Al (60nm) were fabricated. It is found that when the ratio of DMAC-DPS to m-MTDATA is 2: 1, the maximum luminance, the maximum current density and the maximum current efficiency of the device reach the maximum value in the aspect of the maximum luminance, the maximum current density and the maximum current efficiency. Among the preparation methods of the above three devices, we have determined the best process of preparing organic electroluminescent devices, which provides the experimental basis for later work. 3. The effect of temperature on photoluminescence spectra of mixed TAPC:BC zVBi films was studied. The surface morphology, TAPC, BCZVBi,TAPC:BCZVBi absorption spectra, normalized photoluminescence spectra and photoluminescence spectra of TAPC:BCZVBi mixed films at different temperatures were studied. It is found that with the decrease of temperature, the intensity of luminescence increases and the position of luminescence peak shifts red. The absorption characteristics and PL spectra of TAPC,BCZVBi and TAPC:BCZVBi mixed films were compared. It was found that the absorption peaks of the mixed films were almost the same as those of TAPC films, because the energy transfer inhibited the absorption of BCZVBi. The mixed films have two emission peaks, one coincident with the main peak of BCZVBi, which we think is contributed by BCZVBi alone and the other peak position by both.
【學(xué)位授予單位】：聊城大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN383.1
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