【摘要】：為解決傳統(tǒng)CMOS帶隙基準電壓源的溫度系數(shù)較高的問題,采用高階曲率補償方法,提出了一種新型的帶隙基準電壓源,這種基準電壓源的結構簡單同時具有良好耗能性能,并且基準電壓的溫度系數(shù)得到一定的優(yōu)化.利用NMOS管工作在亞閾值區(qū)域時漏電流和柵源電壓的非線性特性,通過引入與基準電壓溫度系數(shù)成相反趨勢的高階補償電流,降低基準電壓的溫度系數(shù),以較少的硬件消耗為代價大幅提高了其溫度特性,最后推導出補償后的基準電壓的計算公式.基于0.18μm BCD工藝進行仿真,結果表明:在-40℃~150℃溫度范圍內,基準電壓的溫度系數(shù)為6.94×10~(-6);電源電壓VDD在2.5~5.0 V范圍內,線性調整率為0.033%,電路在5 V電源電壓為下工作電流為7.36μA;在典型工藝下(TT),電源抑制比(PSRR)為77.4 dB.基準電壓的溫度特性的理論分析結果與仿真結果吻合較好,通過高階補償后,帶隙基準電壓源表現(xiàn)出優(yōu)良的性能,滿足了帶隙基準源的低功耗和低溫漂的設計要求.
[Abstract]:In order to solve the problem of high temperature coefficient of traditional CMOS bandgap reference voltage source, a new type of bandgap reference voltage source is proposed by using high order curvature compensation method. The structure of this voltage reference source is simple and has good energy dissipation performance. And the temperature coefficient of the reference voltage is optimized to a certain extent. Based on the nonlinear characteristics of leakage current and gate source voltage in the sub-threshold region of the NMOS transistor, the temperature coefficient of the reference voltage is reduced by introducing the high-order compensation current, which is opposite to the reference voltage temperature coefficient, in order to reduce the temperature coefficient of the reference voltage. At the cost of less hardware consumption, the temperature characteristic is greatly improved. Finally, the calculation formula of the compensated reference voltage is deduced. The simulation results based on 0.18 渭 m BCD process show that the temperature coefficient of the reference voltage is 6.94 脳 10 ~ (- 6) in the temperature range of-40 鈩，

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