GaN器件的特性及應(yīng)用研究
發(fā)布時(shí)間：2019-03-17 20:07
【摘要】：摘要：隨著電力電子技術(shù)的進(jìn)步,小功率開關(guān)電源的發(fā)展方向趨于高頻化與小型化,人們對其高效與高功率密度的需求日益強(qiáng)烈。作為新一代半導(dǎo)體器件,GaN(氮化鎵)器件應(yīng)運(yùn)而生,并具有替代逐漸達(dá)到理論極限的Si(硅)功率半導(dǎo)體器件的趨勢。近來,增強(qiáng)型GaN晶體管在電力電子領(lǐng)域得到推廣,對于這種新型的第三代寬禁帶器件,其特性與傳統(tǒng)的SiMOSFET相似,但又存在差異。GaN晶體管理論上可以高頻工作,并得到可觀的效率。本文便旨在研究增強(qiáng)型GaN晶體管的特性,與SiMOSFET進(jìn)行對比分析。最終以高效、小型化為目標(biāo),探究其在高頻LLC諧振電路中的應(yīng)用特性,研究高頻化為電路帶來的影響與效率優(yōu)化方法。 本文的主要研究對象是EPC公司單體增強(qiáng)型GaN晶體管。本文首先介紹了GaN器件的發(fā)展與現(xiàn)狀,并對其特性與優(yōu)勢進(jìn)行總結(jié),選取LLC諧振變換器作為增強(qiáng)型GaN器件應(yīng)用特性的研究拓?fù)洌浩浯窝芯苛嗽鰪?qiáng)型GaN晶體管的靜態(tài)特性與動態(tài)特性,與MOSFET進(jìn)行對比分析,并對增強(qiáng)型GaN晶體管進(jìn)行了特性測試;然后理論分析了雜散參數(shù)對高頻驅(qū)動電路的影響,設(shè)計(jì)了適用于增強(qiáng)型GaN晶體管的高頻驅(qū)動電路,并對其PCB布局進(jìn)行了優(yōu)化設(shè)計(jì)；理論分析了基于GaN晶體管的與基于MOSFET的200kHz LLC諧振變換器的電路元器件損耗,仿真驗(yàn)證了GaN晶體管損耗小的優(yōu)勢,進(jìn)行了基于GaN晶體管的樣機(jī)實(shí)驗(yàn)分析,并對輸出二極管選型、死區(qū)時(shí)間及主電路板PCB布局進(jìn)行優(yōu)化；最后為減小樣機(jī)體積、進(jìn)一步高頻化,基于優(yōu)化后的電路板設(shè)計(jì)了GaN晶體管的500kHz LLC同步整流諧振變換器,對GaN晶體管的應(yīng)用特性進(jìn)行了仿真和實(shí)驗(yàn)驗(yàn)證,為提高電路效率,進(jìn)行了優(yōu)化變壓器結(jié)構(gòu)及死區(qū)時(shí)間等優(yōu)化措施,并實(shí)驗(yàn)驗(yàn)證了措施的有效性。
[Abstract]:Abstract: with the development of power electronics technology, the development direction of small power switching power supply tends to be high frequency and miniaturization, and the demand for its high efficiency and high power density is increasingly strong. As a new generation semiconductor device, GaN (gallium nitride (Gallium nitride) device emerges as the times require and has the tendency of replacing Si (silicon) power semiconductor devices which gradually reach the theoretical limit. Recently, enhanced GaN transistors have been popularized in power electronics field. For this new type of third generation wide band gap devices, their characteristics are similar to those of traditional SiMOSFET, but there are differences. Gan transistors can work at high frequency theoretically. And get considerable efficiency. The purpose of this paper is to study the characteristics of enhanced GaN transistor and compare it with SiMOSFET. Finally, with the goal of high efficiency and miniaturization, the application characteristics of high-frequency LLC resonant circuit are explored, and the influence of high-frequency circuit and the optimization method of efficiency are studied. The main research object of this paper is EPC company's monomeric enhanced GaN transistor. In this paper, the development and current situation of GaN device are introduced, and its characteristics and advantages are summarized. The LLC resonant converter is selected as the research topology of the application characteristics of the enhanced GaN devices. Secondly, the static and dynamic characteristics of the enhanced GaN transistors are studied, compared with MOSFET, and the characteristics of the enhanced GaN transistors are tested. Then, the influence of spurious parameters on the high frequency driving circuit is analyzed theoretically, and the high frequency driving circuit suitable for the enhanced GaN transistor is designed, and its PCB layout is optimized. The circuit component loss of 200kHz LLC resonant converter based on GaN transistor and 200kHz LLC converter based on MOSFET is analyzed theoretically. The advantage of low loss of GaN transistor is verified by simulation. The prototype experiment based on GaN transistor is carried out, and the output diode is selected. The dead time and the PCB layout of the main circuit board are optimized. Finally, in order to reduce the size of the prototype and further increase the frequency, the 500kHz LLC synchronous rectifier resonant converter of GaN transistor is designed based on the optimized circuit board. The application characteristics of the GaN transistor are simulated and verified by experiments, in order to improve the efficiency of the circuit. The optimization measures such as optimal transformer structure and dead time are carried out, and the effectiveness of the measures is verified by experiments.
【學(xué)位授予單位】：北京交通大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN303
本文編號：2442655
[Abstract]:Abstract: with the development of power electronics technology, the development direction of small power switching power supply tends to be high frequency and miniaturization, and the demand for its high efficiency and high power density is increasingly strong. As a new generation semiconductor device, GaN (gallium nitride (Gallium nitride) device emerges as the times require and has the tendency of replacing Si (silicon) power semiconductor devices which gradually reach the theoretical limit. Recently, enhanced GaN transistors have been popularized in power electronics field. For this new type of third generation wide band gap devices, their characteristics are similar to those of traditional SiMOSFET, but there are differences. Gan transistors can work at high frequency theoretically. And get considerable efficiency. The purpose of this paper is to study the characteristics of enhanced GaN transistor and compare it with SiMOSFET. Finally, with the goal of high efficiency and miniaturization, the application characteristics of high-frequency LLC resonant circuit are explored, and the influence of high-frequency circuit and the optimization method of efficiency are studied. The main research object of this paper is EPC company's monomeric enhanced GaN transistor. In this paper, the development and current situation of GaN device are introduced, and its characteristics and advantages are summarized. The LLC resonant converter is selected as the research topology of the application characteristics of the enhanced GaN devices. Secondly, the static and dynamic characteristics of the enhanced GaN transistors are studied, compared with MOSFET, and the characteristics of the enhanced GaN transistors are tested. Then, the influence of spurious parameters on the high frequency driving circuit is analyzed theoretically, and the high frequency driving circuit suitable for the enhanced GaN transistor is designed, and its PCB layout is optimized. The circuit component loss of 200kHz LLC resonant converter based on GaN transistor and 200kHz LLC converter based on MOSFET is analyzed theoretically. The advantage of low loss of GaN transistor is verified by simulation. The prototype experiment based on GaN transistor is carried out, and the output diode is selected. The dead time and the PCB layout of the main circuit board are optimized. Finally, in order to reduce the size of the prototype and further increase the frequency, the 500kHz LLC synchronous rectifier resonant converter of GaN transistor is designed based on the optimized circuit board. The application characteristics of the GaN transistor are simulated and verified by experiments, in order to improve the efficiency of the circuit. The optimization measures such as optimal transformer structure and dead time are carried out, and the effectiveness of the measures is verified by experiments.
【學(xué)位授予單位】：北京交通大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN303
【參考文獻(xiàn)】
相關(guān)期刊論文 前3條
1 李寶珠;;寬禁帶半導(dǎo)體材料技術(shù)[J];電子工業(yè)專用設(shè)備;2010年08期
2 張金風(fēng);郝躍;;GaN高電子遷移率晶體管的研究進(jìn)展[J];電力電子技術(shù);2008年12期
3 陳志堅(jiān);林國慶;;半橋型LLC諧振變換器的建模和設(shè)計(jì)[J];電工電氣;2010年05期
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