【摘要】：本文以70 ke V低能電子和1 Me V高能電子為輻照源,研究了氫氣環(huán)境下柵控橫向PNP型(GLPNP)雙極晶體管電離輻射損傷缺陷演化行為規(guī)律。采取原位測試電性能方法,并結(jié)合柵掃描技術(shù)(GS)、亞閾值掃描法(SS)、深能級瞬態(tài)譜(DLTS)及等溫退火等手段,揭示了氫氣對GLPNP型晶體管電離效應(yīng)及退火效應(yīng)的影響規(guī)律。試驗結(jié)果表明,1 Me V高能電子和70 ke V低能電子輻照對GLPNP型晶體管造成的電離損傷規(guī)律是基本一致的。1 Me V高能電子和70 ke V低能電子輻照后,經(jīng)氫氣浸泡的GLPNP晶體管的電流增益退化更嚴重。通過綜合對比分析GS、SS及DLTS測試結(jié)果表明,經(jīng)過氫氣浸泡的GLPNP型晶體管在輻照過程中會產(chǎn)生更多的電離輻射損傷缺陷,這是由于氫氣會促進輻照過程中GLPNP晶體管氧化物俘獲正電荷及界面態(tài)陷阱的形成。在相同的電離吸收劑量條件下,與70 ke V電子輻照相比,1 Me V電子輻照產(chǎn)生的氧化物俘獲正電荷及界面態(tài)陷阱數(shù)量更多,對GLPNP晶體管造成的性能退化程度更嚴重。通過比較分析氧化物俘獲正電荷和界面態(tài)陷阱濃度與少子壽命的內(nèi)在聯(lián)系可知,1 Me V高能電子產(chǎn)生的電離輻射損傷缺陷會減小發(fā)射結(jié)和中性基區(qū)中的少子壽命,導致GLPNP晶體管的復合電流增加。少子壽命的減小主要基于兩種原因:一是由于氧化物俘獲電荷在發(fā)射結(jié)表面累積,使空間耗盡區(qū)向發(fā)射極移動,導致少子壽命減小及復合電流增加;二是界面態(tài)數(shù)量的增加,會致使中性基區(qū)中少子壽命減小及復合電流增加。150℃等溫退火試驗表明,退火過程中的氫氣可與界面態(tài)及氧化物俘獲正電荷同時發(fā)生交互作用。在退火過程中氫氣的存在促使GLPNP晶體管電離輻射誘導的氧化物俘獲正電荷及界面態(tài)缺陷的恢復,加快GLPNP晶體管電流增益的恢復程度。
[Abstract]:In this paper, 70 ke V low energy electrons and 1 Me V high energy electrons are used as irradiation sources to study the evolution of damage defects in gate-controlled transverse (GLPNP) bipolar transistors under hydrogen atmosphere. By means of in-situ measurement of electrical properties and gate scanning technique (GS), sub-threshold scanning method (SS), deep-level transient spectrum (DLTS) and isothermal annealing are used. The effects of hydrogen on ionization effect and annealing effect of GLPNP transistor are revealed. The experimental results show that the ionization damage of 1 Me V high energy electron and 70 ke V low energy electron irradiation on GLPNP type transistor is basically the same. After 1 Me V high energy electron irradiation and 70 ke V low energy electron irradiation, the ionization damage of GLPNP type transistor is similar to that of 70 ke V low energy electron irradiation. The current gain degradation of hydrogen immersed GLPNP transistor is more serious. The results of GS,SS and DLTS tests show that there are more damage defects caused by ionizing radiation in the hydrogen immersed GLPNP transistor during irradiation. This is because hydrogen promotes the formation of oxide capture positive charges and interface state traps in GLPNP transistors during irradiation. Under the same ionizing absorption dose, compared with 70 ke V electron irradiation, the oxide capture positive charge and interface state trap produced by 1 Me V electron irradiation are more serious than that of 70 Me V electron irradiation, and the performance degradation of GLPNP transistor is more serious. By comparing and analyzing the intrinsic relationship between the trapped positive charge of oxide and the concentration of interface state trap and the lifetime of minority ions, we can see that the damage defects of ionizing radiation produced by 1 Me V high energy electron can reduce the lifetime of minority ions in the emission junction and neutral base region. The compound current of GLPNP transistor is increased. The decrease of minority carrier lifetime is mainly due to two reasons: one is that the oxide capture charge accumulates on the surface of the emission junction, which makes the space depletion region move towards the emitter, resulting in the decrease of minority ion lifetime and the increase of composite current; Second, the increase of the number of interface states will lead to the decrease of minority carrier lifetime and the increase of composite current in the neutral base region. The isothermal annealing test at 150 鈩，

本文編號：2431832