SiC厚膜快速外延生長刻蝕工藝研究
發(fā)布時(shí)間：2019-02-25 07:44
【摘要】：10kV以上高壓功率器件的應(yīng)用提出了高質(zhì)量快速4H-SiC外延生長工藝要求。4°4H-SiC厚膜外延生長時(shí),對(duì)于器件制備不利的三角缺陷和臺(tái)階聚并是常見問題,使用HCl氣體作為含Cl化合物,研究了不同刻蝕工藝、不同刻蝕溫度對(duì)于4H-SiC外延層質(zhì)量的影響。采用1 620℃HCl氣體刻蝕襯底5min,1 600℃外延生長的工藝,可以有效降低三角缺陷數(shù)量,同時(shí)避免臺(tái)階聚并的形成。通過刻蝕工藝,以平均55.2μm/h的外延速率生長了平均55.2μm厚的高質(zhì)量4H-SiC外延層,三角缺陷數(shù)量1個(gè)/cm2,表面粗糙度0.167nm。
[Abstract]:The application of high voltage power devices above 10kV has put forward the requirement of high quality and fast 4H-SiC epitaxial growth process. 4 擄4H-SiC thick film epitaxial growth is a common problem for fabrication of unfavorable triangular defects and step agglomeration. The effect of different etching process and etching temperature on the quality of 4H-SiC epitaxial layer was studied by using HCl gas as Cl compound. The epitaxial growth of HCl substrate at 1 620 鈩，
本文編號(hào)：2429947
[Abstract]:The application of high voltage power devices above 10kV has put forward the requirement of high quality and fast 4H-SiC epitaxial growth process. 4 擄4H-SiC thick film epitaxial growth is a common problem for fabrication of unfavorable triangular defects and step agglomeration. The effect of different etching process and etching temperature on the quality of 4H-SiC epitaxial layer was studied by using HCl gas as Cl compound. The epitaxial growth of HCl substrate at 1 620 鈩，
本文編號(hào)：2429947
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