【摘要】：國家能源戰(zhàn)略的實(shí)施,促使多種新能源技術(shù)蓬勃發(fā)展,如電動汽車、列車牽引、航空電源、太陽能發(fā)電等,其中核心技術(shù)就是能量轉(zhuǎn)換,而通常電力電子裝置則是實(shí)現(xiàn)這些新技術(shù)的載體,因此裝置的可靠性至關(guān)重要,因?yàn)橐坏┫到y(tǒng)發(fā)生故障,且未能快速有效地監(jiān)測故障并采取措施,便可能會造成重大損失。相關(guān)統(tǒng)計(jì)研究發(fā)現(xiàn),影響電力電子系統(tǒng)可靠性的最主要組成部分之一就是功率器件,所以關(guān)于功率器件可靠性的研究課題已經(jīng)成為研究的重點(diǎn)和熱點(diǎn)。目前,國內(nèi)外多以基于模型的仿真分析方法進(jìn)行失效研究和狀態(tài)監(jiān)測。本課題則以典型IGBT功率模塊為研究對象,通過實(shí)驗(yàn)從模塊結(jié)構(gòu)、溫度特性、器件端部外特性以及狀態(tài)監(jiān)測方面進(jìn)行研究,具體內(nèi)容如下:①針對典型IGBT功率模塊,從機(jī)械結(jié)構(gòu)和物理結(jié)構(gòu)入手,重點(diǎn)以熱損傷理論分析模塊的失效機(jī)理,主要包括:焊料層損傷失效機(jī)理和鍵合線故障失效機(jī)理�；谑C(jī)理的分析,進(jìn)一步探究IGBT功率模塊的鍵合線故障,包括故障原因、故障特征、故障影響和鍵合線狀態(tài)監(jiān)測。②溫度是造成鍵合線脫落故障的主要原因,也是鍵合線故障后最明顯的故障特征,因此本研究通過對比實(shí)驗(yàn),全面分析溫度、穩(wěn)態(tài)熱阻抗與鍵合線狀態(tài)的關(guān)系。③通過監(jiān)測IGBT功率模塊的鍵合線狀態(tài)可以有效提高電力電子系統(tǒng)的可靠性,因此論文重點(diǎn)抓住鍵合線故障對模塊內(nèi)部寄生電容Cge和Cgc的影響,研究得出器件端部外特性Vge與鍵合線狀態(tài)的關(guān)系,最后提出基于溫度和Vge的鍵合線狀態(tài)監(jiān)測方案。研究表明:芯片表面結(jié)溫和芯片中心對應(yīng)于底板的溫度均與鍵合線脫落根數(shù)落呈線性關(guān)系;鍵合線脫落故障不會造成模塊的層結(jié)構(gòu)損傷而使芯片到底板的穩(wěn)態(tài)熱阻抗增大。本文所提出的基于溫度和Vge的鍵合線狀態(tài)監(jiān)測方案盡管精確度仍需提高,但是該方案無需拆封IGBT模塊、電路結(jié)構(gòu)簡單、安全性高、成本低,具有較高的工程適用性。本文在理論和實(shí)驗(yàn)兩個方面都做了研究,尤其是通過大量對比實(shí)驗(yàn)得出的鍵合線故障特征對于后續(xù)實(shí)現(xiàn)系統(tǒng)的故障診斷和狀態(tài)監(jiān)測具有重要的參考價(jià)值,同時(shí)所用到的實(shí)驗(yàn)原理和研究方法對于研究其他功率器件的可靠性也具有參考作用。
[Abstract]:The implementation of the national energy strategy has led to the vigorous development of many new energy technologies, such as electric vehicles, train traction, aviation power, solar power generation, and so on, among which the core technology is energy conversion. Usually, power electronic devices are the carriers to realize these new technologies, so the reliability of the devices is very important, because if the system fails and fails to monitor the failure quickly and effectively and take measures, it may cause great losses. It is found that one of the most important components affecting the reliability of power electronic systems is power devices, so the research on the reliability of power devices has become the focus and focus of the research. At present, failure research and state monitoring are mostly based on model-based simulation analysis methods at home and abroad. This topic takes typical IGBT power module as the research object, through the experiment from the module structure, the temperature characteristic, the device end part outside characteristic as well as the condition monitoring aspect carries on the research, the concrete content is as follows: 1 for the typical IGBT power module, Starting with the mechanical and physical structure, the failure mechanism of the module is analyzed with the thermal damage theory, including: the damage failure mechanism of solder layer and the failure mechanism of bond line fault. Based on the analysis of failure mechanism, this paper further explores the bonding line faults of IGBT power module, including the causes of the failure, the characteristics of the faults, the influence of the faults and the monitoring of the state of the bonding lines. 2 temperature is the main reason for the breakout of the bonding lines. It is also the most obvious fault feature after the bond line fault. Therefore, through comparative experiments, the temperature is analyzed comprehensively in this study. The relationship between steady-state thermal impedance and bonding line state. 3 the reliability of power electronic system can be improved effectively by monitoring the bonding line state of IGBT power module, so this paper focuses on the influence of bond line fault on parasitic capacitance Cge and Cgc in the module. The relationship between Vge and the state of bonding line is obtained. Finally, a scheme of monitoring the state of bonding line based on temperature and Vge is proposed. The results show that the temperature of the chip surface junction and the center of the chip are linearly related to the falling of the bonding line and the failure of the bond line shedding will not cause damage to the layer structure of the module and increase the steady-state thermal impedance of the chip board. Although the precision of temperature and Vge based bond-line state monitoring scheme proposed in this paper needs to be improved, the scheme does not need to unseal the IGBT module, the circuit structure is simple, the security is high, the cost is low, and the scheme has high engineering applicability. In this paper, both theoretical and experimental studies have been done, especially the bond line fault features obtained through a large number of comparative experiments have important reference value for the subsequent implementation of system fault diagnosis and state monitoring. At the same time, the experimental principles and research methods used in the study of the reliability of other power devices also have a reference role.
【學(xué)位授予單位】：天津理工大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN322.8

【參考文獻(xiàn)】

相關(guān)期刊論文 前4條

1 胡建輝;李錦庚;鄒繼斌;譚久彬;;變頻器中的IGBT模塊損耗計(jì)算及散熱系統(tǒng)設(shè)計(jì)[J];電工技術(shù)學(xué)報(bào);2009年03期

2 陳明;胡安;唐勇;汪波;;IGBT結(jié)溫及溫度場分布探測研究[J];電力電子技術(shù);2011年07期

3 劉馴;姚小銘;;分立IGBT的封裝技術(shù)研究[J];電子與封裝;2013年04期

4 魏克新;杜明星;;基于傳熱反問題的絕緣柵雙極型晶體管模塊溫度計(jì)算方法[J];吉林大學(xué)學(xué)報(bào)(工學(xué)版);2011年06期

相關(guān)博士學(xué)位論文 前2條

1 武一民;引線鍵合系統(tǒng)設(shè)計(jì)理論與關(guān)鍵技術(shù)[D];天津大學(xué);2008年

2 杜明星;功率器件狀態(tài)監(jiān)測的關(guān)鍵問題研究[D];天津大學(xué);2012年

相關(guān)碩士學(xué)位論文 前3條

1 付耀龍;IGBT的分析與設(shè)計(jì)[D];哈爾濱工業(yè)大學(xué);2010年

2 沈剛;基于近似熵分析和小波變換的IGBT模塊鍵合線故障特征分析[D];重慶大學(xué);2012年

3 胡震;功率器件的故障診斷及疲勞壽命預(yù)測[D];天津理工大學(xué);2014年

，

本文編號：2428866