【摘要】：光導(dǎo)開關(guān)(Photoconductive semiconductor switch, PCSS)也就是通過光控制導(dǎo)通與關(guān)斷的半導(dǎo)體材料開關(guān)。光導(dǎo)開關(guān)是一種利用光能量激勵(lì)半導(dǎo)體材料,使其電導(dǎo)率發(fā)生變化而產(chǎn)生電脈沖的光電轉(zhuǎn)換器件。光導(dǎo)開關(guān)具有功率密度高(MW量級)、響應(yīng)速度快(ps量級)、觸發(fā)抖動(dòng)低(ps量級)、抗電磁干擾能力強(qiáng)(良好的光電隔離)、體積小、易集成的優(yōu)點(diǎn)。在大電流點(diǎn)火裝置、拒止武器和高功率微波系統(tǒng)、精密時(shí)間同步、THz技術(shù)、瞬態(tài)測試、沖激雷達(dá)、電磁干擾與攻擊系統(tǒng)等領(lǐng)域應(yīng)用廣泛。光導(dǎo)開關(guān)誕生以后,研究人員就孜孜不倦的研究著不同用途的光導(dǎo)開關(guān)的體材料,對于材料的實(shí)驗(yàn)和研究從未停止。第一代半導(dǎo)體材料中的Si,第二代半導(dǎo)體材料中的GaAs,第三代半導(dǎo)體材料中的SiC都被廣泛應(yīng)用到光導(dǎo)開關(guān)中。常溫下GaAs的電子遷移率可達(dá)8500cm2/V·s,比Si和SiC都要高得多,載流子的壽命為O.1ns到10ns,實(shí)驗(yàn)數(shù)據(jù)表明,對于特定波長的光激勵(lì),GaAs光導(dǎo)開關(guān)的電壓轉(zhuǎn)換有著更高的效率。光導(dǎo)開關(guān)的核心部分是重?fù)诫s半導(dǎo)體有源區(qū)與多層金屬經(jīng)合金化形成電極的歐姆接觸。電極接觸電阻的大小直接決定了光導(dǎo)開關(guān)的開關(guān)速度、效率和增益等性能,因此準(zhǔn)確的測量光導(dǎo)開關(guān)歐姆接觸的參數(shù)是研究光導(dǎo)開關(guān)的先決條件。歐姆接觸性能的表征可以通過Ⅰ-Ⅴ特性曲線和接觸電阻率測量來體現(xiàn),也可以通過顯微鏡來掃描其形貌特征來直觀表現(xiàn)。一個(gè)器件要想獲得良好的性能,必須盡可能的降低器件電極的接觸電阻率,從而減小接觸上的壓降,增大器件工作部分的壓降。本論文的研究工作是圍繞GaAs光導(dǎo)開關(guān)的制作工藝和歐姆接觸性能分析研究展開的。論文敘述了光導(dǎo)開關(guān)的研究意義、結(jié)構(gòu)和應(yīng)用,在此基礎(chǔ)上,介紹了光導(dǎo)開關(guān)的原理和歐姆接觸的原理；通過對比和項(xiàng)目的要求確定了光導(dǎo)開關(guān)的襯底材料、電極金屬體系和光導(dǎo)開關(guān)的結(jié)構(gòu)；介紹了常見的歐姆接觸電阻率測量的方法和光導(dǎo)開關(guān)的制作工藝;用圓點(diǎn)傳輸線測量方法對樣品的接觸電阻率進(jìn)行了測量,用半導(dǎo)體電學(xué)特性測試儀測量了歐姆接觸的I-V特性曲線,并且用AFM原子掃描顯微鏡對金屬電極的形貌進(jìn)行了掃描；論文最后對研究工作進(jìn)行了總結(jié)和展望。
[Abstract]:The photoconductive switch (Photoconductive semiconductor switch, PCSS) is a semiconductor material switch that is controlled by light to switch on and off. Photoconductive switch is a kind of optoelectronic conversion device which uses light energy to excite semiconductor material and make its conductivity change and produce electric pulse. The photoconductive switch has the advantages of high power density (MW order of magnitude), fast response speed (ps order of magnitude), low trigger jitter (ps order of magnitude), strong anti-electromagnetic interference ability (good photoelectric isolation), small size and easy integration. It is widely used in many fields, such as high current igniting device, withholding weapon and high power microwave system, precision time synchronization, THz technology, transient test, impulse radar, electromagnetic interference and attack system, etc. Since the birth of photoconductive switches, researchers have been working tirelessly to study the bulk materials of photoconductive switches for different purposes, and the experiments and research on materials have never stopped. Si, in the first generation semiconductor materials, GaAs, in the second generation semiconductor materials, SiC in the third generation semiconductor materials are widely used in photoconductive switches. The electron mobility of GaAs can reach 8500cm2/V s at room temperature, which is much higher than that of Si and SiC. The lifetime of carrier is from O.1ns to 10ns. The experimental data show that the voltage conversion of GaAs photoconductive switch is more efficient than that of Si and SiC. The core part of the photoconductive switch is the ohmic contact between the heavily doped semiconductor active region and the multilayer metal by alloying. The contact resistance of the electrode directly determines the switching speed, efficiency and gain of the photoconductive switch. Therefore, accurate measurement of the parameters of the ohmic contact of the photoconductive switch is a prerequisite for the study of the photoconductive switch. The ohmic contact properties can be characterized by I-V characteristic curve and contact resistivity measurement, or by scanning the morphology of ohmic contact through microscope. In order to obtain good performance, a device must reduce the contact resistivity of the device electrode as much as possible, so as to reduce the pressure drop on the contact and increase the pressure drop in the working part of the device. The research work of this thesis is focused on the fabrication process of GaAs photoconductive switch and the analysis of ohmic contact performance. The research significance, structure and application of photoconductive switch are described in this paper. On this basis, the principle of photoconductive switch and the principle of ohmic contact are introduced. The substrate material, electrode metal system and the structure of photoconductive switch are determined by comparison and project requirements. The common methods of ohmic contact resistivity measurement and the fabrication technology of photoconductive switch are introduced. The contact resistivity of the sample was measured by the method of dot transmission line, the I-V characteristic curve of the ohmic contact was measured by the semiconductor electrical characteristic tester, and the morphology of the metal electrode was scanned by AFM atomic scanning microscope. Finally, the research work is summarized and prospected.
【學(xué)位授予單位】：合肥工業(yè)大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN304

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本文編號(hào)：2428721