大直徑區(qū)熔硅單晶的研究與制備
發(fā)布時(shí)間：2019-02-17 16:08
【摘要】：半導(dǎo)體技術(shù)的發(fā)展使硅單晶大直徑化成為必然趨勢(shì),但6英寸及以上的大直徑區(qū)熔硅單晶生長(zhǎng)極為困難,且該技術(shù)國(guó)外對(duì)我國(guó)進(jìn)行了嚴(yán)格的技術(shù)封鎖,為打破這種局面,國(guó)內(nèi)8英寸區(qū)熔硅單晶的自主研發(fā)勢(shì)在必行。在此背景下,我們確立了本課題的研究目標(biāo),并制定了詳細(xì)的實(shí)驗(yàn)方案設(shè)計(jì),采用進(jìn)口區(qū)熔設(shè)備和高純多晶硅原生棒料,成功生長(zhǎng)出8英寸區(qū)熔本征硅單晶,結(jié)合中子嬗變摻雜和熱處理工藝,制備出滿足半導(dǎo)體技術(shù)發(fā)展的8英寸區(qū)熔硅單晶。本論文對(duì)大直徑區(qū)熔硅單晶生長(zhǎng)技術(shù)以及中子輻照硅單晶熱處理工藝進(jìn)行了重點(diǎn)研究。大直徑區(qū)熔本征硅單晶的生長(zhǎng)難點(diǎn)為熱應(yīng)力導(dǎo)致硅單晶位錯(cuò)過多或開裂、多晶硅棒料化料過程中邊緣出現(xiàn)硅刺、以及原始硅單晶徑向電阻率分布(rail resistivity variation,簡(jiǎn)稱RRV)不均。論文中首先研究了區(qū)熔爐加熱線圈和保溫桶等熱場(chǎng)的優(yōu)化設(shè)計(jì),以及硅單晶生長(zhǎng)速率、硅單晶轉(zhuǎn)速、偏心量、工作頻率等工藝參數(shù)的優(yōu)化問題,找到了提高熱場(chǎng)對(duì)稱性,降低徑向和軸向溫度梯度,減小硅單晶熱應(yīng)力的方案,解決了硅單晶開裂的技術(shù)難題;其次,通過對(duì)化料工藝的研究,改善了化料效果,避免硅刺的產(chǎn)生,同時(shí)有效改善了區(qū)熔硅單晶RRV,為最終產(chǎn)品的RRV指標(biāo)實(shí)現(xiàn)提供了有利保障;最后,通過對(duì)中子輻照后硅單晶的熱處理工藝的研究,綜合考慮熱處理溫度、時(shí)間和降溫速率等重要參數(shù),得到了最佳熱處理工藝,成功消除了中子輻照損傷,使硅單晶電阻率恢復(fù)到目標(biāo)水平,且保證了硅單晶少子壽命。通過以上研究,最終確定了8英寸區(qū)熔硅單晶的生長(zhǎng)工藝和中子輻照單硅晶熱處理工藝,成功研制出各項(xiàng)性能指標(biāo)均滿足目標(biāo)需求的8英寸區(qū)熔硅單晶,具體性能參數(shù)如下:N型無位錯(cuò)硅單晶,直徑202-203 mm,晶向100+20′,電阻率538Ω·cm,RRV平均4.2%,氧含量1×1016 at/cm3,碳含量1×1016 at/cm3,少子壽命861 us。
[Abstract]:The development of semiconductor technology makes the formation of large diameter silicon single crystal become an inevitable trend, but it is extremely difficult to grow large diameter zone fused silicon single crystal with 6 inches or more. In order to break this situation, the technology has been strictly blocked by foreign countries. It is imperative to develop 8-inch zone fused silicon single crystal in China. Under this background, we have established the research goal of this subject, and made the detailed experimental scheme design. By using the imported zone melting equipment and the high purity polysilicon primary rod, we have successfully grown the 8-inch zone melt intrinsic silicon single crystal. In combination with neutron transmutation doping and heat treatment, 8-inch zone fused silicon single crystals were prepared to meet the development of semiconductor technology. In this paper, the growth technology of large diameter zone fused silicon single crystal and the heat treatment process of neutron irradiation silicon single crystal were studied. The growth difficulty of large diameter zone melt intrinsic silicon single crystal is that thermal stress leads to too much dislocation or cracking of silicon single crystal, silicon burrs appear in the process of polysilicon bar material, and the radial resistivity distribution of original silicon single crystal is (rail resistivity variation, for short RRV. In this paper, the optimization design of heating coils and heat preservation buckets, and the optimization of silicon single crystal growth rate, silicon rotation speed, eccentricity and working frequency are studied, and the symmetry of the thermal field is improved. The scheme of reducing radial and axial temperature gradient and reducing thermal stress of silicon single crystal solves the technical problem of silicon crystal cracking. Secondly, through the study of the chemical technology, the material effect is improved, and the silicon spurs are avoided. At the same time, the zone fused silicon single crystal RRV, provides a favorable guarantee for the realization of the RRV index of the final product. Finally, by studying the heat treatment process of silicon single crystal after neutron irradiation and considering the important parameters such as heat treatment temperature, time and cooling rate, the optimum heat treatment process is obtained, and the neutron irradiation damage is successfully eliminated. The resistivity of silicon single crystal is restored to the target level, and the minority carrier lifetime of silicon single crystal is guaranteed. Through the above research, the growth process of 8-inch zone fused silicon single crystal and the heat treatment process of neutron irradiation single silicon crystal were determined. The specific parameters are as follows: N-type dislocation-free silicon single crystal, diameter 202-203 mm, crystal direction 10020g, resistivity 538 惟 cm,RRV average 4.2, oxygen content 1 脳 1016 at/cm3, carbon content 1 脳 1016 at/cm3, minority carrier lifetime 861 us.
【學(xué)位授予單位】：河北工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN304.12
本文編號(hào)：2425349
[Abstract]:The development of semiconductor technology makes the formation of large diameter silicon single crystal become an inevitable trend, but it is extremely difficult to grow large diameter zone fused silicon single crystal with 6 inches or more. In order to break this situation, the technology has been strictly blocked by foreign countries. It is imperative to develop 8-inch zone fused silicon single crystal in China. Under this background, we have established the research goal of this subject, and made the detailed experimental scheme design. By using the imported zone melting equipment and the high purity polysilicon primary rod, we have successfully grown the 8-inch zone melt intrinsic silicon single crystal. In combination with neutron transmutation doping and heat treatment, 8-inch zone fused silicon single crystals were prepared to meet the development of semiconductor technology. In this paper, the growth technology of large diameter zone fused silicon single crystal and the heat treatment process of neutron irradiation silicon single crystal were studied. The growth difficulty of large diameter zone melt intrinsic silicon single crystal is that thermal stress leads to too much dislocation or cracking of silicon single crystal, silicon burrs appear in the process of polysilicon bar material, and the radial resistivity distribution of original silicon single crystal is (rail resistivity variation, for short RRV. In this paper, the optimization design of heating coils and heat preservation buckets, and the optimization of silicon single crystal growth rate, silicon rotation speed, eccentricity and working frequency are studied, and the symmetry of the thermal field is improved. The scheme of reducing radial and axial temperature gradient and reducing thermal stress of silicon single crystal solves the technical problem of silicon crystal cracking. Secondly, through the study of the chemical technology, the material effect is improved, and the silicon spurs are avoided. At the same time, the zone fused silicon single crystal RRV, provides a favorable guarantee for the realization of the RRV index of the final product. Finally, by studying the heat treatment process of silicon single crystal after neutron irradiation and considering the important parameters such as heat treatment temperature, time and cooling rate, the optimum heat treatment process is obtained, and the neutron irradiation damage is successfully eliminated. The resistivity of silicon single crystal is restored to the target level, and the minority carrier lifetime of silicon single crystal is guaranteed. Through the above research, the growth process of 8-inch zone fused silicon single crystal and the heat treatment process of neutron irradiation single silicon crystal were determined. The specific parameters are as follows: N-type dislocation-free silicon single crystal, diameter 202-203 mm, crystal direction 10020g, resistivity 538 惟 cm,RRV average 4.2, oxygen content 1 脳 1016 at/cm3, carbon content 1 脳 1016 at/cm3, minority carrier lifetime 861 us.
【學(xué)位授予單位】：河北工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN304.12
【參考文獻(xiàn)】
相關(guān)期刊論文 前1條
1 張繼榮,薛佳偉,佟麗英;中子輻照CZ硅單晶熱處理后的電阻率變化[J];半導(dǎo)體技術(shù);2005年03期
，本文編號(hào)：2425349
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