【摘要】：研究了在多次回流下Au80Sn20焊層的微觀演變機制及對半導體激光性能的影響,為采用自動化精密校準機械設備,多次回流實現(xiàn)激光疊陣自動化高精度封裝提供技術支持。實驗中,采用掃描電鏡對不同回流次數(shù)下Au80Sn20焊層金屬化合物(IMC)的SEM形貌特征進行了觀察,并做EDS能譜組分分析。同時,對多次回流過程中各階段進行光電性能測試,分析Au80Sn20焊料在多次回流焊接下的微觀演變,以及對激光光電性能的影響。實驗結果表明:對于相同芯片,同一封裝形式,同批次的器件,在340℃,30s的回流焊接條件下,多次回流加熱2~6次,即340℃間歇循環(huán)作用180s以內(nèi),Au80Sn20焊層演變主要在于微觀相形態(tài)的變化,對激光光電性能影響不大;在加熱到8~10次時,即340℃間歇循環(huán)作用300s左右,Au80Sn20焊層與芯片邊界處出現(xiàn)柯肯達爾空洞;12~20次后,即340℃間歇循環(huán)作用至600s,柯肯達爾空洞融合變大,數(shù)量增多,致使半導體激光光電性能明顯下降。
[Abstract]:The microcosmic evolution mechanism of Au80Sn20 welding layer under multiple reflux and its influence on semiconductor laser performance are studied, which provides technical support for automatic precision calibration of mechanical equipment and multiple backflow to realize automatic high-precision packaging of laser stack array. In the experiment, SEM was used to observe the SEM morphology of the metal compound (IMC) of Au80Sn20 welding layer under different reflux times, and the components of EDS were analyzed. At the same time, the optical and electrical properties of Au80Sn20 solder were tested in the process of multiple reflux, and the microcosmic evolution of Au80Sn20 solder under multiple reflux welding was analyzed, and the influence on the laser photoelectric performance was also analyzed. The experimental results show that for the same chip, the same package form and the same batch, under the condition of reflux welding at 340 鈩，

本文編號：2414791