【摘要】：單晶硅片在堿溶液中的腐蝕會(huì)引起表面結(jié)構(gòu)的變化,利用紫外可見分光光度計(jì)測量硅片表面反射率,發(fā)現(xiàn)堿溶液的濃度、腐蝕時(shí)間、添加劑的選擇(無水乙醇或異丙醇)以及添加劑的濃度均對硅片表面反射率有影響。比較幾個(gè)因素發(fā)現(xiàn)堿溶液的濃度和腐蝕時(shí)間對硅片表面反射率影響最大。當(dāng)腐蝕溫度為80℃,NaOH固體濃度為15 g/L,添加劑無水乙醇體積分?jǐn)?shù)10%時(shí),腐蝕30 min得到硅片反射率最低,達(dá)到11.15%。
[Abstract]:The corrosion of monocrystalline silicon wafer in alkali solution will cause the change of surface structure. The reflectivity of silicon wafer is measured by ultraviolet visible spectrophotometer, and the concentration of alkali solution and the corrosion time are found. The selection of additives (anhydrous ethanol or isopropanol) and the concentration of additives all affect the surface reflectivity of silicon wafer. By comparing several factors, it is found that the concentration of alkali solution and corrosion time have the greatest influence on the surface reflectivity of silicon wafer. When the corrosion temperature is 80 鈩，

本文編號：2410712