【摘要】：復(fù)合電流曲線面積S這一參數(shù)被引入來研究了熱電子應(yīng)力下n型金屬氧化物半導(dǎo)體場效應(yīng)晶體管(nMOSFET)中復(fù)合電流的退化特性。電子注入應(yīng)力中,復(fù)合電流隨著熱電子應(yīng)力后峰值變小并且曲線展寬。基于對S變化的分析,發(fā)現(xiàn)這種變化歸因于熱電子應(yīng)力過程中,部分熱電子占據(jù)了部分界面陷阱使得有效的界面態(tài)濃度Nit變小,同時另一部分注入進柵漏交疊區(qū)的氧化層中而使得有效的漏端電壓UD增加。進一步發(fā)現(xiàn),S的變化量△S與應(yīng)力時間在雙對數(shù)坐標下成線性關(guān)系:△S∝t~a,其中a=0.6。
[Abstract]:The composite current curve area S is introduced to study the degradation characteristics of composite current in n-type metal oxide semiconductor field effect transistor (nMOSFET) under hot electron stress. In the electron injection stress, the peak value of the composite current decreases with the hot electron stress and the curve widens. Based on the analysis of the change of S, it is found that this change is attributed to the process of hot electron stress. Some hot electrons occupy part of the interface trap and make the effective interfacial state concentration (Nit) smaller. At the same time, the other part is injected into the oxide layer of the gate leakage overlap area, which increases the effective leakage voltage UD. It is further found that there is a linear relationship between the variation of S and the stress time in the logarithmic coordinates of S, where a 0. 6.
【作者單位】： 西安郵電大學電子工程學院;
【基金】：國家自然科學研究基金資助項目(61306131)
【分類號】：TN386.1

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