硅基集成光波導(dǎo)放大器的最新研究進(jìn)展
發(fā)布時(shí)間:2019-01-17 08:15
【摘要】:在信息化進(jìn)程中,隨著摩爾定律越來(lái)越接近極限,將微電子和光電子結(jié)合起來(lái),開(kāi)發(fā)硅基大規(guī)模光電子集成技術(shù)已經(jīng)成為技術(shù)發(fā)展的必然和業(yè)界的普遍共識(shí).在硅基光電子集成器件中,硅基光源是重中之重.雖然硅是間接帶隙半導(dǎo)體材料,發(fā)光效率很低,但人們一直沒(méi)有放棄制備硅基光源.硅基光源包括硅基光波導(dǎo)放大器、發(fā)光二極管、激光器等,其中硅基光波導(dǎo)放大器又是激光器的基礎(chǔ),是硅基光電子集成回路中不可或缺的器件,如果光波導(dǎo)放大器有足夠高的凈增益,在光波導(dǎo)放大器的兩端設(shè)計(jì)合適的諧振腔就可以獲得光泵的激光.本文著眼于硅基光波導(dǎo)放大器,介紹了目前硅基光波導(dǎo)放大器最主要的兩個(gè)研究方向,即硅基混合集成Ⅲ- Ⅴ族半導(dǎo)體光波導(dǎo)放大器和硅基摻稀土離子光波導(dǎo)放大器.并分別討論了這兩個(gè)研究方向的原理、制備方法、發(fā)展過(guò)程等,列舉了相關(guān)的典型研究成果,最后簡(jiǎn)單介紹了其他光放大技術(shù),并做了相應(yīng)的分析、總結(jié)和展望.
[Abstract]:In the process of information technology, with Moore's law approaching the limit, combining microelectronics and optoelectronics, the development of silicon-based large-scale optoelectronic integration technology has become the inevitable trend of technological development and the general consensus of the industry. In silicon-based optoelectronic integrated devices, silicon-based light source is the most important. Although silicon is an indirect band-gap semiconductor material with low luminescence efficiency, it has not been abandoned to fabricate silicon based light source. Silicon based light sources include silicon based optical waveguide amplifiers, light emitting diodes, lasers, etc. Silicon based optical waveguide amplifiers are the basis of lasers, and they are indispensable devices in silicon based optoelectronic integrated circuits. If the optical waveguide amplifier has a sufficiently high net gain, an optically pumped laser can be obtained by designing an appropriate resonator at both ends of the optical waveguide amplifier. This paper focuses on silicon-based optical waveguide amplifiers, and introduces two main research directions of silicon-based optical waveguide amplifiers at present, that is, silicon-based hybrid integrated 鈪,
本文編號(hào):2409799
[Abstract]:In the process of information technology, with Moore's law approaching the limit, combining microelectronics and optoelectronics, the development of silicon-based large-scale optoelectronic integration technology has become the inevitable trend of technological development and the general consensus of the industry. In silicon-based optoelectronic integrated devices, silicon-based light source is the most important. Although silicon is an indirect band-gap semiconductor material with low luminescence efficiency, it has not been abandoned to fabricate silicon based light source. Silicon based light sources include silicon based optical waveguide amplifiers, light emitting diodes, lasers, etc. Silicon based optical waveguide amplifiers are the basis of lasers, and they are indispensable devices in silicon based optoelectronic integrated circuits. If the optical waveguide amplifier has a sufficiently high net gain, an optically pumped laser can be obtained by designing an appropriate resonator at both ends of the optical waveguide amplifier. This paper focuses on silicon-based optical waveguide amplifiers, and introduces two main research directions of silicon-based optical waveguide amplifiers at present, that is, silicon-based hybrid integrated 鈪,
本文編號(hào):2409799
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