【摘要】：由于硅集成電路器件的尺寸遵循著摩爾定律不斷縮小,即將接近其物理極限,減小柵長以提高性能的方法已經(jīng)無法繼續(xù),因此尋找新的材料、結(jié)構(gòu)、工藝和原理才是集成電路繼續(xù)發(fā)展的方向。與硅同為四族元素的鍺材料,由于其具有的較高空穴遷移率,成為了未來集成電路發(fā)展的熱門候選材料�；谏鲜鲈�,本課題選擇鍺作為襯底材料進行討論和器件制備。首先討論了兩種最成熟的集成電路摻雜工藝:氣相熱擴散和離子注入,分析了這些工藝應(yīng)用于鍺基立體結(jié)構(gòu)器件超淺摻雜的局限性,比較得出旋涂摻雜工藝的優(yōu)勢和可行性。在介紹旋涂摻雜工藝基本步驟和原理后,針對鍺材料的特點和集成電路工藝的要求,進行了摻雜元素種類的篩選。提出了使用激光退火改善p-n結(jié)中雜質(zhì)分布的設(shè)想并討論其可行性。從擴散的基本原理出發(fā),建立模型計算旋涂摻雜和激光退火得到的p-n結(jié)中雜質(zhì)的分布,討論了適當參數(shù)激光退火對摻雜元素分布可能產(chǎn)生的改善。設(shè)計了包含旋涂摻雜和激光退火的p-n結(jié)工藝,通過實驗制備了熱處理和激光退火的旋涂摻雜p-n結(jié),得到的器件性能符合預(yù)期,而且經(jīng)過激光退火的p-n結(jié)開關(guān)比增大了近一個數(shù)量級,證明了激光退火對p-n結(jié)特性的改善,通過p-n結(jié)勢壘電容的測試和計算,證明了雜質(zhì)分布符合本課題的理論分析。完成p-n結(jié)的制備后,又設(shè)計了鍺基旋涂摻雜晶體管工藝,并制備出具有一定器件性能的樣品,證明了旋涂摻雜和激光退火融入傳統(tǒng)晶體管工藝的可能性,并通過分析器件制備過程中的問題,提出了改進方案,指導(dǎo)后續(xù)的實驗和研究。
[Abstract]:Since the size of silicon integrated circuit devices follows Moore's law, the method of reducing gate length to improve performance has been unable to continue, so we are looking for new materials and structures. Technology and principle are the direction of IC's development. Because of its high hole mobility, germanium, which is the same as silicon, has become a hot candidate for the development of integrated circuits in the future. For the above reasons, germanium is chosen as substrate material for discussion and device fabrication. Firstly, two most mature integrated circuit doping processes, gas phase thermal diffusion and ion implantation, are discussed. The limitations of these processes in ultra-shallow doping of germanium based stereoscopic devices are analyzed, and the advantages and feasibility of spin-coating doping process are compared. After introducing the basic steps and principles of spin-coating doping process, according to the characteristics of germanium materials and the requirements of integrated circuit technology, the kinds of doping elements are selected. The idea of improving impurity distribution in p-n junction by laser annealing is proposed and its feasibility is discussed. Based on the basic principle of diffusion, a model was established to calculate the impurity distribution in p-n junctions obtained by spin-coating doping and laser annealing, and the possible improvement of doping element distribution by laser annealing with appropriate parameters was discussed. The p-n junction process including spin-coating doping and laser annealing is designed. The p-n junction with heat treatment and laser annealing is fabricated experimentally. The properties of the device are in line with the expectation. Moreover, the switching ratio of p-n junction annealed by laser increases by nearly one order of magnitude. It is proved that the properties of p-n junction are improved by laser annealing. The barrier capacitance of p-n junction is measured and calculated through the measurement and calculation of the barrier capacitance of p-n junction. It is proved that the impurity distribution accords with the theoretical analysis of this subject. After the preparation of p-n junction, germanium based spin-coating doped transistors were designed, and samples with certain device properties were prepared, which proved the possibility of spin-coating doping and laser annealing joining into the traditional transistor process. By analyzing the problems in device fabrication, an improved scheme is proposed to guide the subsequent experiments and research.
【學(xué)位授予單位】：南京大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN303;TN32

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