【摘要】：利用硅雙極晶體管在線監(jiān)測中子注量,其直流增益和損傷常數(shù)是作為探測器指標(biāo)的重要參數(shù)。高溫退火可使受到中子輻照的雙極晶體管性能部分恢復(fù),進(jìn)而可以重復(fù)使用。開展高溫退火特性研究,分析雙極晶體管直流增益的恢復(fù)程度以及損傷常數(shù)的重復(fù)性。在快中子脈沖堆上對(duì)貼片型3DG121C雙極晶體管進(jìn)行三輪中子輻照,每輪輻照累計(jì)注量2.64×10~(13)cm~(-2)。經(jīng)過第一輪中子輻照后,雙極晶體管直流增益下降至輻照前的40%,經(jīng)過180℃連續(xù)24 h的高溫退火后,直流增益恢復(fù)至輻照前的67%;經(jīng)過第二輪輻照后,直流增益下降至第二輪輻照前的50%,在相同條件下退火后,直流增益恢復(fù)至第二輪輻照前的73%;經(jīng)過第三輪輻照后,直流增益下降至第三輪輻照前的58%,在相同條件下退火后,其直流增益恢復(fù)至第三輪輻照前的87%。三輪實(shí)驗(yàn)結(jié)果表明:雙極晶體管直流增益倒數(shù)隨輻照中子注量變化的線性關(guān)系基本一致,具體表現(xiàn)為其損傷常數(shù)具有很好的重復(fù)性。利用該高溫退火特性,將雙極晶體管作為中子注量探測器應(yīng)用于快中子脈沖堆中子注量在線監(jiān)測,監(jiān)測結(jié)果與活化箔結(jié)果基本吻合。
[Abstract]:Using silicon bipolar transistor to monitor neutron flux on line, DC gain and damage constant are important parameters of detector. High temperature annealing can partially recover the properties of neutron irradiated bipolar transistors and then be reused. The characteristics of high temperature annealing are studied and the recovery degree of DC gain and the repeatability of damage constant of bipolar transistors are analyzed. In fast neutron pulse reactor, a patch type 3DG121C bipolar transistor was irradiated by three rounds of neutron irradiation. The cumulative radiation flux per round was 2.64 脳 10 ~ (13) cm~ (-2). After the first neutron irradiation, the DC gain of bipolar transistor decreases to 40 before irradiation, and after annealing at 180 鈩，

本文編號(hào)：2400371