N-B-Al共摻熒光4H-SiC施主受主對(duì)發(fā)光性能研究
發(fā)布時(shí)間：2018-12-19 12:22
【摘要】：施主受主共摻雜的熒光4H-SiC可以通過(guò)復(fù)合發(fā)出可見光,影響其發(fā)光性能的一個(gè)重要因素是施主 受主摻雜的濃度。本研究通過(guò)PVT生長(zhǎng)方法制備了3英寸N-B-Al共摻的4H-SiC晶體,采用Raman光譜、SIMS對(duì)晶體的結(jié)晶類型和摻雜濃度進(jìn)行了表征;采用PL發(fā)射譜和激發(fā)譜、熒光衰減曲線表征和內(nèi)量子效率對(duì)晶體的發(fā)光波長(zhǎng)、強(qiáng)度、施主 受主對(duì)復(fù)合發(fā)光性能進(jìn)行了研究。結(jié)果發(fā)現(xiàn),低濃度Al摻雜樣品在室溫下發(fā)出黃綠色熒光。低濃度Al摻雜在晶體中提供較少的受主;高濃度B、N摻雜形成施主,從而貢獻(xiàn)充足的電子 空穴對(duì)。這些電子 空穴的復(fù)合提高了施主 受主對(duì)復(fù)合的內(nèi)量子效率,進(jìn)而增強(qiáng)光致發(fā)光強(qiáng)度,增加平均發(fā)光壽命。
[Abstract]:The donor co-doped fluorescent 4H-SiC can emit visible light through recombination. The concentration of donor acceptor doping is one of the important factors that affect the luminescence performance of the donor. In this study, 3 inch N-B-Al co-doped 4H-SiC crystals were prepared by PVT growth method. The crystal types and doping concentrations were characterized by Raman spectra and SIMS. PL emission spectra, excitation spectra, fluorescence attenuation curves and internal quantum efficiency were used to study the photoluminescence wavelength, intensity and donor acceptor of the crystal. The results show that the low concentration Al doped samples emit yellowish green fluorescence at room temperature. Low concentration of Al dopants provide less acceptors in crystals, and high concentrations of Al doping form donors, thus contributing sufficient electron hole pairs. The recombination of these electron holes enhances the inner quantum efficiency of the donor acceptor on the recombination, and further increases the photoluminescence intensity and the average luminescence lifetime.
【作者單位】： 中國(guó)科學(xué)院上海硅酸鹽研究所;
【分類號(hào)】：TN304.24
[Abstract]:The donor co-doped fluorescent 4H-SiC can emit visible light through recombination. The concentration of donor acceptor doping is one of the important factors that affect the luminescence performance of the donor. In this study, 3 inch N-B-Al co-doped 4H-SiC crystals were prepared by PVT growth method. The crystal types and doping concentrations were characterized by Raman spectra and SIMS. PL emission spectra, excitation spectra, fluorescence attenuation curves and internal quantum efficiency were used to study the photoluminescence wavelength, intensity and donor acceptor of the crystal. The results show that the low concentration Al doped samples emit yellowish green fluorescence at room temperature. Low concentration of Al dopants provide less acceptors in crystals, and high concentrations of Al doping form donors, thus contributing sufficient electron hole pairs. The recombination of these electron holes enhances the inner quantum efficiency of the donor acceptor on the recombination, and further increases the photoluminescence intensity and the average luminescence lifetime.
【作者單位】： 中國(guó)科學(xué)院上海硅酸鹽研究所;
【分類號(hào)】：TN304.24
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