金屬硅高溫造渣除硼工藝的研究
發(fā)布時間：2018-12-13 11:02
【摘要】：本文的研究目的是探索和改進低成本冶金物理法太陽能級多晶硅的制備工藝，并提出了一種基于氧化物高溫固相反應的造渣萃取除硼的金屬硅提純方法，該方法在傳統(tǒng)的金屬硅“造渣法”提純技術的基礎上，主要通過Al2O3與SiO2或MgO之間能夠在高溫下發(fā)生固相反應分別生成莫來石或尖晶石，同時其反應速度可通過原材料晶體結構和微觀形貌的選擇或者通過添加其它氧化物達到可控性的特點，實現(xiàn)可控性的高溫固相反應。固相反應過程中，反應產物的各組份原子重新排列形成新的晶格，由于B具有極小的原子半徑，熔融的液態(tài)硅中B雜質極易進入該晶格的間隙位中，因此本方法對去除金屬硅中的B雜質有較顯著的效果，同時對其它雜質也有良好的去除效果。本方法具有成本低廉、操作簡單的特點。
[Abstract]:The purpose of this paper is to explore and improve the preparation process of solar-grade polysilicon by low-cost metallurgical physical method, and to propose a method of metal silicon purification by slag extraction and removal of boron based on high temperature solid state reaction of oxide. Based on the traditional "slag forming method" of metal silicon, mullite or spinel can be formed by solid state reaction between Al2O3 and SiO2 or MgO at high temperature. At the same time, the reaction rate can be controlled by selecting the crystal structure and microstructure of raw materials or by adding other oxides to achieve controllability. In the process of solid state reaction, the atoms of each component of the product rearrange to form a new lattice. Because B has a very small atomic radius, B impurities in molten liquid silicon can easily enter the gap potential of the crystal lattice. Therefore, this method has remarkable effect on removing B impurity in metal silicon, and also has good effect on other impurity removal. The method has the characteristics of low cost and simple operation.
【學位授予單位】：南昌大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN304.12
本文編號：2376429
[Abstract]:The purpose of this paper is to explore and improve the preparation process of solar-grade polysilicon by low-cost metallurgical physical method, and to propose a method of metal silicon purification by slag extraction and removal of boron based on high temperature solid state reaction of oxide. Based on the traditional "slag forming method" of metal silicon, mullite or spinel can be formed by solid state reaction between Al2O3 and SiO2 or MgO at high temperature. At the same time, the reaction rate can be controlled by selecting the crystal structure and microstructure of raw materials or by adding other oxides to achieve controllability. In the process of solid state reaction, the atoms of each component of the product rearrange to form a new lattice. Because B has a very small atomic radius, B impurities in molten liquid silicon can easily enter the gap potential of the crystal lattice. Therefore, this method has remarkable effect on removing B impurity in metal silicon, and also has good effect on other impurity removal. The method has the characteristics of low cost and simple operation.
【學位授予單位】：南昌大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN304.12
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本文編號：2376429
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