【摘要】：因?yàn)镮GBT兼具M(jìn)OSFET壓控門級驅(qū)動特性和雙極型晶體管的大電流、低導(dǎo)通壓降特性而被廣泛應(yīng)用于中高功率、中低頻率變流器中。為了提供低壓控制信號端和功率端的電氣隔離以及保證IGBT工作過程中所需的電流、電壓,低成本、高可靠性的門級驅(qū)動電路就十分重要。基于與公司合作的智能功率模塊項(xiàng)目,本文設(shè)計了一種基于華潤上華高壓BCD工藝的雙通道半橋驅(qū)動芯片,該芯片可靠性高、電流輸出能力強(qiáng)、工作頻率高。根據(jù)實(shí)際應(yīng)用需求以及IGBT安全工作對驅(qū)動電路參數(shù)的要求,本文設(shè)計的驅(qū)動芯片參數(shù)指標(biāo)為:輸入接口兼容3.3V/5V CMOS/TTL信號;輸出驅(qū)動電壓幅值為15V;輸出驅(qū)動電流為±1A;正常工作電壓范圍為13.5~16.5V;工作溫度為-40~125℃;最高工作頻率為100kHz;芯片采用15V單電源供電;高低通道信號傳輸時間差小于50ns。同時芯片內(nèi)部集成了高低通道電源欠壓保護(hù)電路、短路保護(hù)電路、過溫保護(hù)電路以及錯誤邏輯控制電路,這些保護(hù)電路可有效保證電路在使用中的安全。本文首先根據(jù)IGBT的工作特性和實(shí)際應(yīng)用需求確定了芯片的參數(shù)指標(biāo),介紹了驅(qū)動芯片的整體結(jié)構(gòu)和工作原理。然后重點(diǎn)對驅(qū)動芯片中部分子電路包括電壓基準(zhǔn)源電路、輸入接口電路、欠壓保護(hù)電路、高壓電平位移電路、低端延時電路進(jìn)行了詳細(xì)的分析和設(shè)計,并運(yùn)用Hspice仿真軟件對各子電路進(jìn)行參數(shù)仿真和功能仿真。在驗(yàn)證了各子電路滿足指標(biāo)要求后,搭建了芯片整體仿真環(huán)境,驗(yàn)證了瞬態(tài)功能、自舉電路功能、保護(hù)功能的正確性和芯片參數(shù)的準(zhǔn)確性。
[Abstract]:IGBT is widely used in medium and high power and low frequency converters because of the characteristics of MOSFET voltage-gate drive and bipolar transistors with high current and low on-voltage drop. In order to provide the electrical isolation between the low-voltage control signal and the power end, and to ensure the current, voltage, low cost and high reliability of the gate drive circuit needed in the IGBT operation process, it is very important. Based on the intelligent power module project, this paper designs a dual-channel half-bridge drive chip based on China Resources High Voltage BCD process. The chip has high reliability, strong current output ability and high working frequency. According to the requirements of practical application and the requirements of IGBT security to drive circuit parameters, the parameters of the driver chip designed in this paper are as follows: input interface compatible with 3.3V/5V CMOS/TTL signal, output driving voltage amplitude of 15V; The output driving current is 鹵1A, the normal operating voltage range is 13.5V / 16.5 V, the working temperature is -400.125 鈩，

本文編號：2363280