超低功耗FS-IGBT研究
發(fā)布時(shí)間：2018-11-26 08:04
【摘要】：電導(dǎo)調(diào)制效應(yīng)的存在使得IGBT器件具有非常低的導(dǎo)通壓降和導(dǎo)通損耗,但這也使得其關(guān)斷損耗較大,因此導(dǎo)通壓降和關(guān)斷損耗之間的矛盾關(guān)系已成為低功耗IGBT設(shè)計(jì)過程中最主要的難題。為了改善IGBT器件導(dǎo)通壓降和關(guān)斷損耗之間的折中關(guān)系,以實(shí)現(xiàn)超低功耗IGBT器件設(shè)計(jì),本文提出了以下兩種新型FS-IGBT結(jié)構(gòu):1、提出了一種具有深槽分裂柵的載流子存儲(chǔ)型IGBT器件(Carrier-Stored Trench Bipolar Transistor with a Split-Gate and a Deep-Trench,SGDT CSTBT),其特征為發(fā)射極一側(cè)具有深槽和分裂柵結(jié)構(gòu)。在關(guān)斷狀態(tài)下,深槽分裂柵結(jié)構(gòu)可以有效地輔助耗盡載流子存儲(chǔ)層,使其所在結(jié)面處的電場峰值降低,從而緩解因高摻雜載流子存儲(chǔ)層引起的耐壓退化問題,使CSTBT器件能夠更好地發(fā)揮載流子存儲(chǔ)效果,以獲得更低的導(dǎo)通壓降;同時(shí),階梯狀槽型結(jié)構(gòu)可以調(diào)制體內(nèi)電場而提高器件的耐壓。仿真結(jié)果表明,SGDT CSTBT可以使器件在N型載流子存儲(chǔ)層濃度提升到5×1017cm-3的情況下仍然能夠維持1521V的高耐壓水平;同時(shí),與傳統(tǒng)CSTBT相比,新結(jié)構(gòu)可以在相同的關(guān)斷損耗下導(dǎo)通壓降下降48.1%;此外,盡管采用了深槽結(jié)構(gòu),但結(jié)合分裂柵使得新結(jié)構(gòu)具有與傳統(tǒng)CSTBT一樣的密勒電容,因此不會(huì)對器件的開關(guān)特性造成明顯的影響。最后,本文還針對SGDT CSTBT提出了一種可行的工藝方案。2、提出了一種具有電子阻擋層的短路陽極IGBT器件(Shorted Anode Lateral IGBT with Electron Barrier Layer,EB-SA LIGBT),其結(jié)構(gòu)特征為集電極區(qū)有P+電子阻擋層和N-高阻通道。通過在集電極區(qū)引入電子阻擋層和高阻通道,有效增加集電極PN結(jié)附近的等效電阻,使得器件能夠在較小的單極電流下進(jìn)入雙極導(dǎo)電模式,從而抑制器件的電壓回跳現(xiàn)象,提高器件工作時(shí)的穩(wěn)定性。仿真結(jié)果表明,與傳統(tǒng)SA LIGBT和SSA LIGBT相比,新結(jié)構(gòu)在集電極區(qū)的表面積僅為“4μm×8μm”時(shí)就能完全抑制器件的電壓回跳現(xiàn)象;同時(shí),與同能抑制電壓回跳現(xiàn)象的SSA LIGBT相比,新結(jié)構(gòu)在相同的關(guān)斷損耗下,其導(dǎo)通壓降下降了52.4%。最后,本文還提供了一種可行的EB-SA LIGBT工藝制造方案。
[Abstract]:The existence of conductance modulation effect makes IGBT devices have very low on-voltage drop and on-on loss, but it also makes the turn-off loss larger. Therefore, the contradiction between on-voltage drop and turn-off loss has become the most important problem in the design of low-power IGBT. In order to improve the tradeoff relationship between on-voltage drop and turn-off loss of IGBT devices and realize the design of ultra-low power IGBT devices, two new types of FS-IGBT structures are proposed in this paper: 1. A carrier memory type IGBT device (Carrier-Stored Trench Bipolar Transistor with a Split-Gate and a Deep-Trench,SGDT CSTBT),) with deep slot splitter gate is proposed, which is characterized by deep slot and split gate structures on the emitter side. Under turn-off condition, the deep groove-splitting gate structure can effectively assist the depletion of the carrier storage layer, reduce the peak electric field at the junction surface, and alleviate the problem of voltage degradation caused by the highly doped carrier storage layer. The CSTBT device can make better use of the carrier storage effect to obtain lower on-pressure drop. At the same time, the ladder groove structure can modulate the internal electric field and improve the voltage resistance of the device. The simulation results show that, SGDT CSTBT can maintain the high voltage level of 1521V even when the concentration of N-type carrier layer increases to 5 脳 1017cm-3. At the same time, compared with the traditional CSTBT, the new structure can reduce the on-off pressure drop by 48.1% under the same turn-off loss. In addition, although the deep groove structure is used, the new structure has the same Miller capacitance as the traditional CSTBT, so it has no obvious effect on the switching characteristics of the device. Finally, a feasible process scheme for SGDT CSTBT is proposed. 2. A short-circuit anode IGBT device (Shorted Anode Lateral IGBT with Electron Barrier Layer,EB-SA LIGBT), with electronic barrier layer is proposed. The structure is characterized by P electron barrier layer and N-high resistance channel in the collector region. By introducing an electron barrier layer and a high resistance channel in the collector region, the equivalent resistance near the collector PN junction is effectively increased, which enables the device to enter the bipolar conduction mode at a relatively small unipolar current, so as to suppress the voltage bouncing phenomenon of the device. The stability of the device is improved. The simulation results show that compared with the traditional SA LIGBT and SSA LIGBT, the new structure can completely suppress the voltage bouncing phenomenon when the surface area of the collector is only "4 渭 m 脳 8 渭 m". At the same time, compared with the SSA LIGBT, which can restrain the voltage bounce phenomenon, the on-voltage drop of the new structure decreases by 52.4% under the same turn-off loss. Finally, a feasible EB-SA LIGBT process manufacturing scheme is provided.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN322.8
本文編號：2357893
[Abstract]:The existence of conductance modulation effect makes IGBT devices have very low on-voltage drop and on-on loss, but it also makes the turn-off loss larger. Therefore, the contradiction between on-voltage drop and turn-off loss has become the most important problem in the design of low-power IGBT. In order to improve the tradeoff relationship between on-voltage drop and turn-off loss of IGBT devices and realize the design of ultra-low power IGBT devices, two new types of FS-IGBT structures are proposed in this paper: 1. A carrier memory type IGBT device (Carrier-Stored Trench Bipolar Transistor with a Split-Gate and a Deep-Trench,SGDT CSTBT),) with deep slot splitter gate is proposed, which is characterized by deep slot and split gate structures on the emitter side. Under turn-off condition, the deep groove-splitting gate structure can effectively assist the depletion of the carrier storage layer, reduce the peak electric field at the junction surface, and alleviate the problem of voltage degradation caused by the highly doped carrier storage layer. The CSTBT device can make better use of the carrier storage effect to obtain lower on-pressure drop. At the same time, the ladder groove structure can modulate the internal electric field and improve the voltage resistance of the device. The simulation results show that, SGDT CSTBT can maintain the high voltage level of 1521V even when the concentration of N-type carrier layer increases to 5 脳 1017cm-3. At the same time, compared with the traditional CSTBT, the new structure can reduce the on-off pressure drop by 48.1% under the same turn-off loss. In addition, although the deep groove structure is used, the new structure has the same Miller capacitance as the traditional CSTBT, so it has no obvious effect on the switching characteristics of the device. Finally, a feasible process scheme for SGDT CSTBT is proposed. 2. A short-circuit anode IGBT device (Shorted Anode Lateral IGBT with Electron Barrier Layer,EB-SA LIGBT), with electronic barrier layer is proposed. The structure is characterized by P electron barrier layer and N-high resistance channel in the collector region. By introducing an electron barrier layer and a high resistance channel in the collector region, the equivalent resistance near the collector PN junction is effectively increased, which enables the device to enter the bipolar conduction mode at a relatively small unipolar current, so as to suppress the voltage bouncing phenomenon of the device. The stability of the device is improved. The simulation results show that compared with the traditional SA LIGBT and SSA LIGBT, the new structure can completely suppress the voltage bouncing phenomenon when the surface area of the collector is only "4 渭 m 脳 8 渭 m". At the same time, compared with the SSA LIGBT, which can restrain the voltage bounce phenomenon, the on-voltage drop of the new structure decreases by 52.4% under the same turn-off loss. Finally, a feasible EB-SA LIGBT process manufacturing scheme is provided.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN322.8
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