基于表面等離子體的超分辨光刻技術研究
發(fā)布時間：2018-11-24 19:53
【摘要】：光刻是制備集成電路及其他微納器件過程中最關鍵的環(huán)節(jié)。而傳統(tǒng)光刻技術受光學衍射的影響,始終無法突破?/2的衍射極限,這嚴重限制了光學分辨率的提升,并成為微納加工領域發(fā)展的巨大障礙。近些年來,諸多可以克服衍射極限的新型光刻技術已經(jīng)蓬勃發(fā)展。其中,表面等離子體光刻技術因其波長短、局域性強等特性成為了研究超分辨光刻技術的熱點。本論文主要針對表面等離子體的超分辨光刻技術進行了研究。論文的主要工作和結(jié)論如下:1、首先分析了傳統(tǒng)光刻技術的優(yōu)缺點,討論了光刻技術的發(fā)展歷史和發(fā)展新型光刻技術的必要性。分析了表面等離子體光刻技術的現(xiàn)狀,并在其基礎上,提出了基于PDMS軟掩模的表面等離子體光刻技術。2、探索了表面等離子體的相關基本理論,研究了邊界效應和耦合效應光刻技術的內(nèi)在機理,介紹了本論文所采用的數(shù)值計算方法。3、建立了傳統(tǒng)邊界效應和表面等離子體邊界效應的兩種光刻模型,利用時域有限差分法商用軟件Opti-FDTD對光刻模型進行了仿真計算,并對比分析了兩種邊界效應的電場分布,確定了基于表面等離子體邊界效應的光刻技術具有更高的分辨率和對比度,可實現(xiàn)超分辨成像。通過對表面等離子體邊界效應光刻結(jié)構(gòu)參數(shù)的優(yōu)化,進一步增強了表面等離子體邊界效應。根據(jù)實驗條件,開展了相關邊界效應的光刻實驗。結(jié)果表明,利用線條寬度為18μm的掩模結(jié)構(gòu)制備出特征尺寸小于2μm的光刻圖形。4、建立了光耦合效應和表面等離子體耦合效應的兩種光刻模型,并對兩種光刻模型進行了仿真計算。通過對電場能量分布的對比分析,確定了表面等離子體耦合效應的光刻技術在分辨率、對比度和傳播深度三個方面有明顯的提升。通過對表面等離子體耦合效應光刻結(jié)構(gòu)參數(shù)的調(diào)制,解決了邊界效應無法控制特征尺寸、難以制備多樣化圖形的問題。最終模擬實現(xiàn)了特征尺寸僅為?/10、對比度高達0.99的超分辨成像。
[Abstract]:Photolithography is the most important step in the fabrication of integrated circuits and other micro-nano devices. Because of the influence of optical diffraction, the traditional lithography technology can not break through the diffraction limit of? / 2, which seriously limits the improvement of optical resolution and becomes a great obstacle to the development of micro / nano machining field. In recent years, many new lithography techniques which can overcome the diffraction limit have been developed rapidly. Among them, surface plasma lithography technology has become a hotspot for its short wavelength and strong locality. In this thesis, the surface plasma superresolution lithography technology has been studied. The main work and conclusions are as follows: 1. Firstly, the advantages and disadvantages of traditional lithography technology are analyzed, and the development history of lithography technology and the necessity of developing new lithography technology are discussed. The current situation of surface plasma lithography is analyzed, and on the basis of it, the surface plasma lithography technology based on PDMS soft mask is proposed. 2. The basic theory of surface plasma lithography is explored. The intrinsic mechanism of boundary effect and coupling effect lithography is studied, and the numerical calculation method used in this paper is introduced. 3. Two lithography models of traditional boundary effect and surface plasma boundary effect are established. The simulation of the lithography model is carried out by using the commercial software Opti-FDTD of the finite-difference time-domain method, and the electric field distribution of the two boundary effects is compared and analyzed. It is determined that the lithography technology based on the boundary effect of surface plasma has higher resolution and contrast, and can realize super-resolution imaging. The surface plasma boundary effect is further enhanced by optimizing the structure parameters of the surface plasma boundary effect. According to the experimental conditions, the lithography experiments of the related boundary effects are carried out. The results show that the photolithographic patterns with characteristic size less than 2 渭 m are prepared by using the mask structure with a width of 18 渭 m. 4. Two lithographic models of the coupling effect and the coupling effect of surface plasma are established. Two lithography models are simulated and calculated. By comparing and analyzing the energy distribution of the electric field, it is determined that the lithography technology of the coupling effect of surface plasma has obvious improvement in three aspects: resolution, contrast and propagation depth. By modulating the structural parameters of surface plasma coupling lithography, the problem that the boundary effect can not control the characteristic size and make various shapes is solved. Finally, the simulation results show that the feature size is only? / 10 and the contrast is as high as 0.99.
【學位授予單位】：電子科技大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TN405
本文編號：2354834
[Abstract]:Photolithography is the most important step in the fabrication of integrated circuits and other micro-nano devices. Because of the influence of optical diffraction, the traditional lithography technology can not break through the diffraction limit of? / 2, which seriously limits the improvement of optical resolution and becomes a great obstacle to the development of micro / nano machining field. In recent years, many new lithography techniques which can overcome the diffraction limit have been developed rapidly. Among them, surface plasma lithography technology has become a hotspot for its short wavelength and strong locality. In this thesis, the surface plasma superresolution lithography technology has been studied. The main work and conclusions are as follows: 1. Firstly, the advantages and disadvantages of traditional lithography technology are analyzed, and the development history of lithography technology and the necessity of developing new lithography technology are discussed. The current situation of surface plasma lithography is analyzed, and on the basis of it, the surface plasma lithography technology based on PDMS soft mask is proposed. 2. The basic theory of surface plasma lithography is explored. The intrinsic mechanism of boundary effect and coupling effect lithography is studied, and the numerical calculation method used in this paper is introduced. 3. Two lithography models of traditional boundary effect and surface plasma boundary effect are established. The simulation of the lithography model is carried out by using the commercial software Opti-FDTD of the finite-difference time-domain method, and the electric field distribution of the two boundary effects is compared and analyzed. It is determined that the lithography technology based on the boundary effect of surface plasma has higher resolution and contrast, and can realize super-resolution imaging. The surface plasma boundary effect is further enhanced by optimizing the structure parameters of the surface plasma boundary effect. According to the experimental conditions, the lithography experiments of the related boundary effects are carried out. The results show that the photolithographic patterns with characteristic size less than 2 渭 m are prepared by using the mask structure with a width of 18 渭 m. 4. Two lithographic models of the coupling effect and the coupling effect of surface plasma are established. Two lithography models are simulated and calculated. By comparing and analyzing the energy distribution of the electric field, it is determined that the lithography technology of the coupling effect of surface plasma has obvious improvement in three aspects: resolution, contrast and propagation depth. By modulating the structural parameters of surface plasma coupling lithography, the problem that the boundary effect can not control the characteristic size and make various shapes is solved. Finally, the simulation results show that the feature size is only? / 10 and the contrast is as high as 0.99.
【學位授予單位】：電子科技大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TN405
【參考文獻】
相關期刊論文 前2條
1 尚寶月;楊紹斌;;TiO_2自組裝膜的制備及抗菌性能研究[J];化工新型材料;2010年08期
2 張斗國,王沛,焦小瑾,唐麟,魯擁華,明海;表面等離子體亞波長光學前沿進展[J];物理;2005年07期
，本文編號：2354834
本文鏈接：http://sikaile.net/kejilunwen/dianzigongchenglunwen/2354834.html
教材專著
