【摘要】：太赫茲波在成像及探測(cè)系統(tǒng)、物聯(lián)網(wǎng)、通信、天文、安全檢查等領(lǐng)域都有著重要的應(yīng)用。但是由于缺乏有效的太赫茲源及高靈敏探測(cè)器,太赫茲技術(shù)的發(fā)展也因此受到限制,所以在太赫茲技術(shù)領(lǐng)域,頻率源仍是首當(dāng)其沖需要解決的問題�；诎雽�(dǎo)體技術(shù)的固態(tài)源具有性能穩(wěn)定、結(jié)構(gòu)簡(jiǎn)單、體積小、可靠性高、低成本等的優(yōu)勢(shì),使其成為超外差接收機(jī)中本振的一種重要的選擇,占據(jù)了目前太赫茲源的主要地位,是受到廣泛關(guān)注的THz源。目前,世界上固態(tài)源的輸出頻率已突破2.7THz。本文簡(jiǎn)要介紹了太赫茲頻段固態(tài)倍頻器的發(fā)展動(dòng)態(tài),根據(jù)肖特基二極管的相關(guān)理論知識(shí)計(jì)算出重要參數(shù),分析基于肖特基變?nèi)荻䴓O管對(duì)的平衡二倍頻器的倍頻原理和結(jié)構(gòu)。在此基礎(chǔ)上,對(duì)二倍頻器的電路結(jié)構(gòu)、二極管三維電磁建模、無源電路結(jié)構(gòu)進(jìn)行分析,利用HFSS和ADS仿真軟件聯(lián)合仿真,分別優(yōu)化輸入、輸出匹配,輸出過渡和直流偏置電路,開展440GHz二倍頻器的研究。通過準(zhǔn)確的三維建模,對(duì)加工和裝配誤差進(jìn)行了量化容差分析,驗(yàn)證了440GHz二倍頻器對(duì)加工和裝配的容差度。倍頻電路采用厚度為50μm的石英懸置微帶電路實(shí)現(xiàn),直流偏置電路采用厚度為0.127mm Rogers RT/duroid 5880微帶電路實(shí)現(xiàn)。測(cè)試結(jié)果顯示,調(diào)節(jié)偏置電壓至-1V時(shí),當(dāng)輸入功率為20mW時(shí),在445.92GHz處獲得最大輸出功率,為39μW,在440~450GHz頻段內(nèi)的輸出功率介于5μW至40μW之間。本課題中所積累的經(jīng)驗(yàn)對(duì)于國(guó)內(nèi)太赫茲半導(dǎo)體器件的研究具有實(shí)踐意義。
[Abstract]:Terahertz waves have important applications in imaging and detection systems, Internet of things, communications, astronomy, security inspection and so on. However, due to the lack of effective terahertz source and high sensitivity detector, the development of terahertz technology is limited, so frequency source is still the first problem to be solved in the field of terahertz technology. The solid-state source based on semiconductor technology has the advantages of stable performance, simple structure, small volume, high reliability and low cost, which makes it an important choice of local oscillator in superheterodyne receiver and occupies the main position of terahertz source. Is a widely concerned source of THz. At present, the output frequency of solid-state source in the world has exceeded 2.7THz. This paper briefly introduces the development of terahertz solid-state frequency multiplier, calculates the important parameters according to the relevant theoretical knowledge of Schottky diode, and analyzes the doubling principle and structure of the balanced doubler based on Schottky varactor diode pair. On this basis, the circuit structure, diode 3D electromagnetic modeling, passive circuit structure of the doubler are analyzed, and the input, output matching, output transition and DC bias circuits are optimized by HFSS and ADS simulation software. The research of 440GHz doubler is carried out. Through accurate 3D modeling, the tolerance of machining and assembly error is analyzed, and the tolerance of 440GHz doubler to machining and assembly is verified. The frequency doubling circuit is realized by quartz mount microstrip circuit with thickness of 50 渭 m, and the DC bias circuit by 0.127mm Rogers RT/duroid 5880 microstrip circuit with thickness. The test results show that when the bias voltage reaches -1 V, when the input power is 20mW, the maximum output power is 39 渭 W at 445.92GHz, and the output power in 440~450GHz band is between 5 渭 W and 40 渭 W. The experience accumulated in this paper has practical significance for the research of terahertz semiconductor devices in China.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN771

【參考文獻(xiàn)】

相關(guān)碩士學(xué)位論文 前1條

1 陳寧波;基于肖特基二極管的太赫茲三倍頻技術(shù)研究[D];電子科技大學(xué);2013年

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本文編號(hào)：2325549