【摘要】：采用四線法研究Ag/Si O2/p-Si∶B/Si O2/Ag器件在不同溫度下的電輸運性能(V-I特性),在低溫V-I特性曲線中觀察到了明顯的熱滯現(xiàn)象.為了消除熱滯現(xiàn)象帶來的實驗誤差,文中提出了采用增強系統(tǒng)熱傳導以及延長連續(xù)兩次測量的間隔時間的方法,并通過延長連續(xù)兩次測量時間間隔的方式消除了熱滯對器件電輸運性能的影響.結(jié)果表明,在進行半導體基材料的電性能及磁阻效應的研究時,必須考慮熱效應可能帶來的影響,否則將導致錯誤的實驗結(jié)果.
[Abstract]:The electrical transport properties (V-I characteristics) of Ag/Si O2/p-Si:B/Si O2/Ag devices at different temperatures are studied by four-wire method. The obvious thermal hysteresis phenomenon is observed in the V-I characteristic curves at low temperature. In order to eliminate the experimental error caused by thermal hysteresis, a method of enhancing the heat conduction of the system and prolonging the interval between two successive measurements is proposed in this paper. The influence of thermal hysteresis on the electrical transport performance of the device is eliminated by extending the time interval between two successive measurements. The results show that the thermal effect must be taken into account in the study of the electrical properties and magnetoresistive effects of semiconductor based materials, otherwise it will lead to wrong experimental results.
【作者單位】： 武漢理工大學材料復合新技術(shù)國家重點實驗室;
【基金】：國家自然科學基金資助項目(11574243,11174231)~~
【分類號】：TN304

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