【摘要】：金屬氧化物薄膜晶體管(Metal Oxide Thin film Transistors,MOTFTs)因在其在未來大尺寸、高幀率和高分辨率的平板顯示器中巨大的潛在應用價值而受到研究者們的廣泛關注。金屬氧化物半導體薄膜晶體管技術存在諸多優(yōu)點,包括高載流子遷移率、高光學透過率和低工藝溫度等。本文以基于溶液法制備以高介電常數(shù)的納米復合結構為絕緣層,氧化銦(In_2O_3)為有源層的金屬氧化物薄膜晶體管為研究課題,以制備出高遷移率與低驅動電壓的高性能薄膜晶體管為目標,研究了溶液法制備的氧化鋁與聚(4-乙烯基苯酚)(Poly(4-vinyphenol),PVP)納米復合結構絕緣層以及修飾層對器件性能的改變,以及基于溶液法和燃燒合成法制備氧化銦半導體層的器件的性能。具體研究內容包括:1. 基于Al_2O_3與PVP納米復合結構絕緣層及所制備的TFT器件性能研究。采用Al_2O_3與PVP納米復合結構絕緣體作為絕緣層,研究了不同PVP濃度對絕緣層的界面形貌以及電學性能的影響,并通過制備的并五苯TFT器件研究了納米復合結構絕緣層對薄膜晶體管器件性能的影響。當PVP濃度為10%有最高的器件性能,其載流子遷移率為0.27cm~2/(V·s),電流開關比為3.1×10~4。隨后使用聚甲基丙烯酸甲酯(Polymethylmethacrylate,PMMA)作為納米復合結構絕緣層的修飾層,研究了修飾層對絕緣層性能的影響,所制得的器件載流子遷移率最高達到0.49cm~2/(V·s),電流開關比為7.8×10~4。2.基于溶液法制備金屬氧化物有源層的TFT性能研究。分別研究了不同的熱處理溫度以及使用燃燒合成法工藝對氧化銦薄膜和器件性能的影響。使用溶液法時,當熱處理溫度為350℃時,制備的氧化銦薄膜晶體管器件性能為器件的遷移率為0.57cm~2/(V·s),同時器件的電流開關比達到了3.5×10~4。通過使用燃燒合成法工藝,在金屬氧化物前驅體溶液中添加燃料,利用燃料在熱處理過程中的放熱反應,可以大幅降低有源層熱處理溫度。利用該方法,制備出的器件遷移率為0.23cm~2/(V·s),電流開關比為6.6×10~3。
[Abstract]:Metal oxide thin Film Transistor (Metal Oxide Thin film Transistors,MOTFTs) has attracted wide attention due to its great potential application value in large size, high frame rate and high resolution flat panel displays in the future. Metal oxide semiconductor thin film transistor technology has many advantages, including high carrier mobility, high optical transmittance and low process temperature. In this paper, metal oxide thin film transistors with high dielectric constant and indium oxide (In_2O_3) as active layer are prepared by solution method. The preparation of high performance thin film transistors with high mobility and low driving voltage was studied. The alumina and poly (4-vinylphenol) (Poly (4-vinyphenol) were prepared by solution method. PVP) nanocomposite structure insulation layer and modified layer on the performance of the device, and based on the solution method and combustion synthesis method to prepare indium oxide semiconductor layer device performance. The specific research contents include: 1. The properties of TFT devices based on Al_2O_3 and PVP nanocomposite structure insulation layer are studied. The influence of different PVP concentration on the interface morphology and electrical properties of Al_2O_3 / PVP nanocomposite insulator was studied. The effects of nanocomposite insulation layer on the performance of thin film transistor devices were investigated by using pentaben TFT devices. When the concentration of PVP is 10%, the maximum performance of the device is obtained, and the carrier mobility is 3.1 脳 10 ~ (4) 0.27cm~2/ (V s), current-switching ratio. Then, polymethyl methacrylate (Polymethylmethacrylate,PMMA) was used as the modified layer of nanocomposite insulation layer. The effect of the modified layer on the properties of the insulating layer was studied. The maximum carrier mobility of the device was up to 0.49cm~2/ (V s),. The current switching ratio is 7.8 脳 10 ~ (-2). TFT properties of metal oxide active layer prepared by solution method. The effects of different heat treatment temperature and combustion synthesis process on the properties of indium oxide films and devices were studied. With the solution method, when the heat treatment temperature is 350 鈩，

本文編號：2319748