【摘要】：在黑硅表面制備的微結(jié)構(gòu)可以使其獲得多種表面功能,這些功能在太陽(yáng)能、探測(cè)器等領(lǐng)域具有廣泛的應(yīng)用.因此,黑硅微結(jié)構(gòu)的形成機(jī)理及制備條件優(yōu)化一直是研究關(guān)注的焦點(diǎn).本文的研究發(fā)現(xiàn),隨著激光輻照量(提高單脈沖能量或增加積累脈沖數(shù))的增加會(huì)遇到形貌尺寸生長(zhǎng)的瓶頸效應(yīng):過(guò)多的能量累積對(duì)微結(jié)構(gòu)的優(yōu)化和控制并沒(méi)有進(jìn)一步的作用.理論計(jì)算結(jié)果表明,產(chǎn)生這一現(xiàn)象的原因是前序飛秒激光脈沖誘導(dǎo)產(chǎn)生的微結(jié)構(gòu)形貌對(duì)當(dāng)前激光脈沖能量的吸收產(chǎn)生了調(diào)制,使當(dāng)前激光脈沖的有效燒蝕效率降低.根據(jù)這一飛秒激光燒蝕規(guī)律,提出了一種優(yōu)化表面形貌的新方案——在輻照激光總能量一定的條件下,通過(guò)改變激光能量的分配方式(單脈沖能量與脈沖數(shù)的組合)可實(shí)現(xiàn)表面形貌的優(yōu)化.這一新的工作方式不但可以提高黑硅的制備效率,而且還有助于減少飛秒加工過(guò)程帶來(lái)的表面缺陷及損傷,并降低加工過(guò)程中的能源消耗.這一研究成果對(duì)黑硅性能的進(jìn)一步提升及其工程應(yīng)用具有重要的意義.
[Abstract]:The microstructure prepared on the surface of black silicon can obtain many kinds of surface functions, which have been widely used in solar energy, detector and other fields. Therefore, the formation mechanism and preparation conditions of black silicon microstructures have been the focus of attention. It is found that with the increase of laser irradiation (increasing the energy of single pulse or increasing the number of accumulated pulses), the bottleneck effect of morphology size growth will be encountered: too much energy accumulation has no further effect on the optimization and control of microstructure. The theoretical calculation results show that this phenomenon is caused by the modulation of the energy absorption of the current laser pulse by the microstructure induced by the front sequence femtosecond laser pulse, which reduces the effective ablation efficiency of the current laser pulse. According to this law of femtosecond laser ablation, a new scheme for optimizing the surface morphology is proposed, under the condition that the total energy of irradiated laser is constant. The surface morphology can be optimized by changing the distribution of laser energy (the combination of single pulse energy and pulse number). This new method can not only improve the preparation efficiency of black silicon, but also reduce the surface defects and damage caused by femtosecond processing, and reduce the energy consumption in the process. This research result is of great significance to the further improvement of black silicon properties and its engineering application.
【作者單位】： 長(zhǎng)春理工大學(xué)理學(xué)院;光電信息控制和安全技術(shù)重點(diǎn)實(shí)驗(yàn)室;
【基金】：國(guó)家自然科學(xué)基金(批準(zhǔn)號(hào):61605017) 長(zhǎng)春市科技計(jì)劃(批準(zhǔn)號(hào):14KP007) 長(zhǎng)春理工大學(xué)青年科學(xué)基金(批準(zhǔn)號(hào):XQNJJ-2015-01) 光電信息控制和安全技術(shù)重點(diǎn)實(shí)驗(yàn)室基金資助的課題~~
【分類號(hào)】：TN249;TN304.12

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