P溝道VDMOS器件抗輻射加固技術(shù)研究
發(fā)布時間：2018-11-07 21:32
【摘要】：針對功率器件的抗輻射加固技術(shù),從入射粒子對半導(dǎo)體材料的輻射損傷機(jī)理出發(fā),設(shè)計(jì)了一種-150 V抗輻射P溝道VDMOS器件。該器件采取的抗輻射加固措施有:在頸區(qū)的上方形成局部厚場氧化層結(jié)構(gòu);在N體區(qū)進(jìn)行高劑量離子注入摻雜;在850℃低溫條件下生長柵氧化層。通過仿真分析和試驗(yàn)進(jìn)行了驗(yàn)證,該器件在最劣漏偏置條件下抗總劑量達(dá)到3 k Gy,抗單粒子燒毀和單粒子?xùn)糯┑腖ET值為99.1 Me V·cm~2/mg。該器件適用于星用抗輻射DC-DC電源系統(tǒng)。
[Abstract]:Based on the radiation damage mechanism of incident particles to semiconductor materials, a P-channel VDMOS device with -150V radiation resistance is designed. The anti-radiation strengthening measures are as follows: forming a local thick field oxide structure above the neck region, doping high dose ion implantation in the N-body region, and growing gate oxide layer at 850 鈩，
本文編號：2317626
[Abstract]:Based on the radiation damage mechanism of incident particles to semiconductor materials, a P-channel VDMOS device with -150V radiation resistance is designed. The anti-radiation strengthening measures are as follows: forming a local thick field oxide structure above the neck region, doping high dose ion implantation in the N-body region, and growing gate oxide layer at 850 鈩，
本文編號：2317626
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